Abstract: The cancellation of a redundant element of an integrated circuit with a cancel bank is disclosed. In one embodiment, a fuse or antifuse bank is coupled to the redundant element and permanently programmed to respond to the address of a defective primary element. If the redundant element is found to be defective, the fuse or antifuse bank is canceled, and a result the redundant element is also canceled. A cancel line of the fuse or antifuse bank, along with the cancel line of each of a plurality of other fuse or antifuse banks, is coupled to a cancel bank. The cancel bank comprises a multiplexer and a plurality of cancel antifuses less in number than the number of fuse or antifuse banks. The cancel antifuses are selectively enabled such that the fuse or antifuse bank coupled to the defective redundant element may be canceled.

Abstract: A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

Abstract: An integrated semiconductor junction antifuse is formed from either adjacent regions of opposite doping types or spaced apart regions of similar doping type within a substrate. In its unblown state, the junction antifuse forms an open circuit that blocks current from flowing while in the blown state, the junction antifuse conducts current. The junction antifuse is blown by applying a breakdown voltage sufficient to overcome a semiconductor junction so that current flows across the reverse-biased semiconductor junction. As current flows across the reverse-biased junction, dopant migration forms a conductive path so that the junction antifuse no longer forms an open circuit.

Abstract: A memory device includes an array of memory cells that are arranged in rows and columns. A row address latch connected to the address bus stores a row address on the address bus during a precharge period responsive to a transition of a row address strobe from an active low state to an inactive high state. A row decoder connected to the row address latch decodes the stored row address, and a redundancy checker determines if the decoded row is defective and, if so, selects a redundant row of memory cells for addressing. The row address decoder and the redundancy checker perform these respective functions during the precharge period. The memory device also includes a wordline controller that fires a wordline corresponding to the addressed row responsive to a transition of the row address strobe from its inactive high state to its active low state.

Abstract: A programmable circuit in an integrated circuit provides a programmed signal, which is based on the state of a first node. An anti-fuse includes a first terminal coupled to the first node and a second terminal coupled to a programming bus. An anti-fuse programming pad is coupled to the first programming bus for permitting a sufficient voltage to short the first anti-fuse to be applied to the first programming bus from external to the integrated circuit. The state of the programmed signal can be used to replace a primary circuit element in the integrated circuit, such a row or column of memory cells in a memory integrated circuit, with a redundant circuit element.

Abstract: An antifuse bank includes a bank of self-decoupling anti fuse circuits. The anti fuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the anti fuse resistance is sufficiently low, limits current flow through the anti fuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

Abstract: An antifuse bank includes a bank of self-decoupling antifuse circuits. The antifuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the antifuse resistance is sufficiently low, limits current flow through the antifuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

Abstract: A memory device includes an array of memory cells that are arranged in rows and columns. A row address latch connected to the address bus stores a row address on the address bus during a precharge period responsive to a transition of a row address strobe from an active low state to an inactive high state. A row decoder connected to the row address latch decodes the stored row address, and a redundancy checker determines if the decoded row is defective and, if so, selects a redundant row of memory cells for addressing. The row address decoder and the redundancy checker perform these respective functions during the precharge period. The memory device also includes a wordline controller that fires a wordline corresponding to the addressed row responsive to a transition of the row address strobe from its inactive high state to its active low state.