Abstract: A method of reading a flash memory device wherein the status of a predetermined cell is read in such a way that a plurality of page buffers connected to a memory cell array through a plurality of bit lines are divided into at least two group, and the page buffers are sequentially driven on a group basis. A power loss problem caused by excessive current consumption occurring since all page buffers operate at the same time is avoided.

Abstract: A non-volatile memory device includes an even bit line and an odd bit line, a first register, a second register, a first precharge unit, a second precharge unit and a bit line select unit. The even bit line and the odd bit line are connected to a memory cell array. The first register is connected to the even bit line and configured to store specific data. The second register is connected to the odd bit line and configured to store specific data. The first precharge unit precharges an even sense node, formed at a node of the even bit line and the first register, with a high level or supplies supplementary current to the even sense node. The second precharge unit precharges an odd sense node, formed at a node of the odd bit line and the second register, with a high level or supplies supplementary current to the odd sense node. The bit line select unit connects the even bit line and the even sense node and connects the odd bit line and the odd sense node.

Abstract: A flash memory device has a precharging section for precharging adequately in advance internal data lines included in an Y-decoder section whenever a process of inputting data into page buffer is performed, error in a second process of inputting data may be reduced by preventing the maintenance of data loaded to data lines in a first process of inputting data prior to the second process.

Abstract: A page buffer circuit of a flash memory device includes page buffers which are connected to the plurality of bit line pairs, respectively, and execute a read operation or a program operation on memory cells in response to bit line control signals, bit line select signals and control signals, and bit line precharge circuits, which are connected to the plurality of bit line pairs, respectively, and in the read operation, precharge one of a pair of bit lines connected thereto to a reference voltage level in response to bit line precharge signals. The reference voltage can be a stable voltage regardless of variation in temperature and/or voltage. A bit line precharge circuit supplies a stable precharge voltage to bit line regardless of variation in temperature and/or voltage in a read operation. Therefore, erroneous data can be prevented from being read.

Abstract: A page buffer circuit of a flash memory device includes page buffers which are connected to the plurality of bit line pairs, respectively, and execute a read operation or a program operation on memory cells in response to bit line control signals, bit line select signals and control signals, and bit line precharge circuits, which are connected to the plurality of bit line pairs, respectively, and in the read operation, precharge one of a pair of bit lines connected thereto to a reference voltage level in response to bit line precharge signals. The reference voltage can be a stable voltage regardless of variation in temperature and/or voltage. A bit line precharge circuit supplies a stable precharge voltage to bit line regardless of variation in temperature and/or voltage in a read operation. Therefore, erroneous data can be prevented from being read.

Abstract: A reference voltage generating circuit of a non-volatile ferroelectric memory device includes a temperature compensating control circuit that increases and outputs a level of a signal to a reference capacitor node according to an increase in temperature when a reference control signal is at a high level, a plurality of ferroelectric capacitors connected in parallel, each of first electrodes of the plurality of ferroelectric capacitors are commonly connected to a ground voltage terminal and each of second electrodes of the plurality of ferroelectric capacitors are commonly connected to the reference capacitor node, and a plurality of switching blocks controlled by a reference wordline signal, each having drain terminals commonly connected to the reference capacitor node, source terminals connected to a corresponding bitline.

Abstract: A nonvolatile ferroelectric memory device includes a top cell array block having a first plurality of unit cells, each with a pair of first and second top split wordlines, a bottom cell array block provided with a second plurality of unit cells, each having a pair of first and second bottom split wordlines to correspond to the pair of first and second top split wordlines, a top split wordline driver controlling an output signal transmitted to the first and second top split wordlines of the top cell array block, a bottom split wordline driver controlling an output signal transmitted to the first and second bottom split wordlines of the bottom cell array block, a split wordline driver controller outputting first and second split wordline control signals, and a sensing amplifier arranged for each bitline between the top cell array block and the bottom cell array block.

Abstract: The present invention discloses a magnetic random access memory comprising MRAM cell groups connected in series in forms of an NAND. The MRAM cell groups comprise magnetic tunnel junctions between word lines and P-N diodes, and memory cells for reading and writing data. In the present invention, the cell size can be reduced by comprising MRAM cell arrays wherein one or more MRAM cells are connected in series in forms of an NAND.

Abstract: A fail repair circuit of a nonvolatile ferroelectric memory device and a method for repairing the same are disclosed, in which a redundancy time can be reduced and a redundancy algorithm can be changed or added at any time.

Abstract: A column repair circuit in a non-volatile ferroelectric memory having main columns and redundancy columns includes a data input/output buffer part for data input/output between the non-volatile ferroelectric memory and an external circuit, a failed column coding part for controlling the main columns and the redundancy columns and connected in response to a failed column address signal to one of main input/output lines in the input/output buffer part and redundancy input/output lines, a repair column adjusting circuit part connected to the failed column coding part for providing a redundancy mode control signal, a data bus amplifying part for amplifying data between the main input/output lines and the main columns to control read/write operation, and a redundancy data bus amplifying part for amplifying data between the redundancy input/output lines and the redundancy columns in response to the redundancy mode control signal.

Abstract: A fail repair circuit of a nonvolatile ferroelectric memory device and a method for repairing the same are disclosed, in which a redundancy time can be reduced and a redundancy algorithm can be changed or added at any time.

Abstract: A circuit for testing a ferroelectric capacitor in a FRAM includes: a test pulse signal generating part; a digital test pulse providing part, responsive to the test pulse signal; an n-bit counter, responsive to the digital test pulse signal as a clock signal; a measuring control signal providing part; a write pulse bar signal generating part; an input drive control part for receiving a reference voltage signal, a voltage signal at the first electrode of the ferroelectric capacitor, the measuring control signal, and the write pulse bar signal, and applying a driving voltage to the second electrode of the ferroelectric capacitor in response to the test pulse signal, and a measured result forwarding part for receiving the reference voltage signal and the voltage signal from the first electrode, and amplifying and forwarding a voltage variation between the electrodes of the ferroelectric capacitor.

Abstract: A ferroelectric memory device includes a cell array block having a plurality of sub-cell array blocks regularly arranged in columns and rows, each sub-cell array block includes a plurality of unit cells, a plurality of main bitlines disposed along a first direction corresponding to the sub-cell array blocks in column units, a plurality of sub-bitlines disposed along the first direction in a one-to-one correspondence to the sub-cell array blocks, a plurality of pairs of sub-bitline pull down signal application lines and sub-bitline enable switch signal application lines disposed along a second direction perpendicular to the first direction, each pair corresponding to the sub-cell array block for applying a sub-bitline enable switch signal and a sub-bitline pull down signal, and a plurality of switching control blocks, each corresponding to the sub-cell array block for one of enabling the sub-bitlines selectively in response to the sub-bitline enable switch signal and pulling down the sub-bitlines in response t

Abstract: A fail repair circuit of a nonvolatile ferroelectric memory device and a method for repairing the same are disclosed, in which a redundancy time can be reduced and a redundancy algorithm can be changed or added at any time.

Abstract: A reference circuit in a ferroelectric memory includes a reference plate line and a reference word line adjacently formed in a first direction in correspondence with a cell block including a plurality of unit cells; a plurality of bit lines connected to the unit cells and formed in a second direction; a plurality of parallelly disposed reference capacitors each having a first electrode connected to the reference plate line and a second electrode connected to a storage node SN of a reference cell; an initializing unit connected to the storage node for initializing a level of the reference cell; and a switching block formed between the bit lines and the storage node in correspondence with the bit lines and controlled by signals applied to the reference word line.

Abstract: A column repair circuit and method of a nonvolatile ferroelectric memory device can include: a memory test logic block capable of generating a redundancy active pulse (RAP) and a corresponding fail input/output (IO) number FION<r> if a column address including a fail bit to be repaired is found during test; a power-up sensor capable of generating a power-up pulse if a stable power source voltage is sensed; a first redundancy control block capable of generating first to fifth control signals ENN, ENP, EQN, CPL, and PREC and a sixth control signal ENW in response to the RAP and the power-up pulse; a counter generating n bit counter bit signal increased by one bit through the RAP to correspond to the number of redundancy bits; a redundancy counter decoding control block capable of generating an activated coding signal ENW<n> in response to the counter bit signal of the counter and the sixth control signal ENW; and a redundancy coding block capable of coding a fail column address in response to the co

Abstract: The present invention discloses a magnetic random access memory comprising MRAM cell groups connected in series in forms of an NAND. The MRAM cell groups comprise magnetic tunnel junctions between word lines and P-N diodes, and memory cells for reading and writing data. In the present invention, the cell size can be reduced by comprising MRAM cell arrays wherein one or more MRAM cells are connected in series in forms of an NAND.

Abstract: A nonvolatile ferroelectric memory device includes a top cell array block that includes a first plurality of unit cells, each unit cell having a pair of first and second top split wordlines connected with a gate of a switching transistor and one node of a ferroelectric capacitor, and each unit cell formed in a split structure with a corresponding unit cell along a bitline, a bottom cell array block provided with a second plurality of unit cells, each unit cell having a pair of first and second bottom split wordlines to correspond to the pair of first and second top split wordlines, the first and second bottom split wordlines being connected with a gate of a switching transistor and one node of a ferroclectric capacitor, a top split wordline driver controlling an output signal transmitted to the pair of first and second top split wordlines of the top cell array block, a bottom split wordline driver controlling an output signal transmitted to the pair of first and second bottom split wordlines of the bottom cel

Abstract: A column repair circuit in a non-volatile ferroelectric memory having main columns and redundancy columns includes a data input/output buffer part for data input/output between the non-volatile ferroelectric memory and an external circuit, a failed column coding part for controlling the main columns and the redundancy columns and connected in response to a failed column address signal to one of main input/output lines in the input/output buffer part and redundancy input/output lines, a repair column adjusting circuit part connected to the failed column coding part for providing a redundancy mode control signal, a data bus amplifying part for amplifying data between the main input/output lines and the main columns to control read/write operation, and a redundancy data bus amplifying part for amplifying data between the redundancy input/output lines and the redundancy columns in response to the redundancy mode control signal.

Abstract: A reference voltage generating circuit of a non-volatile ferroelectric memory device includes a temperature compensating control circuit that increases and outputs a level of a signal to a reference capacitor node according to an increase in temperature when a reference control signal is at a high level, a plurality of ferroelectric capacitors connected in parallel, each of first electrodes of the plurality of ferroelectric capacitors are commonly connected to a ground voltage terminal and each of second electrodes of the plurality of ferroelectric capacitors are commonly connected to the reference capacitor node, and a plurality of switching blocks controlled by a reference wordline signal, each having drain terminals commonly connected to the reference capacitor node, source terminals connected to a corresponding bitline.