Patents by Inventor Dyson H. Tai

Dyson H. Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150236058
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Application
    Filed: May 5, 2015
    Publication date: August 20, 2015
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai
  • Patent number: 9111993
    Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: August 18, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Chih-Wei Hsiung, Arvind Kumar
  • Publication number: 20150130010
    Abstract: A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 14, 2015
    Applicant: OmniVision Technologies
    Inventors: Jin Li, Gang Chen, Yin Qian, Dyson H. Tai
  • Publication number: 20150123172
    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.
    Type: Application
    Filed: November 1, 2013
    Publication date: May 7, 2015
    Applicant: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Dajiang Yang, Zhibin Xiong, Dyson H. Tai
  • Publication number: 20150108507
    Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: OmniVision Technologies, Inc.
    Inventors: Qingfei Chen, Qingwei Shan, Yin Qian, Dyson H. Tai
  • Publication number: 20150097213
    Abstract: Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array.
    Type: Application
    Filed: October 4, 2013
    Publication date: April 9, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Duli Mao, Dyson H. Tai
  • Publication number: 20150076639
    Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.
    Type: Application
    Filed: September 18, 2013
    Publication date: March 19, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Jin Li, Duli Mao, Dyson H. Tai
  • Patent number: 8981512
    Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: March 17, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Jin Li, Duli Mao, Dyson H. Tai
  • Publication number: 20140312447
    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.
    Type: Application
    Filed: June 30, 2014
    Publication date: October 23, 2014
    Inventors: Duli Mao, Dyson H. Tai, Vincent Venezia, Yin Qian, Gang Chen, Howard E. Rhodes
  • Patent number: 8729712
    Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: May 20, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Dyson H. Tai, Keh-Chiang Ku, Vincent Venezia, Duli Mao, Wei Zheng, Howard E. Rhodes
  • Publication number: 20140035089
    Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
    Type: Application
    Filed: October 14, 2013
    Publication date: February 6, 2014
    Applicant: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Dyson H. Tai, Keh-Chiang Ku, Vincent Venezia, Duli Mao, Wei Zheng, Howard E. Rhodes