Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

Abstract: Provided herein is a method of treating a central nervous system disorder in a patient in need thereof, wherein the central nervous system disorder is selected from schizophrenia, Alzheimer's disease, Huntington's disease, Parkinson's disease, and Lewy Body dementia. The method comprises orally administering an initial dose of between 75 mg and 300 mg xanomeline and an initial dose of between 20 mg and 200 mg trospium chloride to the patient during a 24-hour period. Provided that the patient tolerates said administration, an increased dose of trospium chloride and an increased dose of xanomeline are orally administering to the patient, wherein the increased dose of trospium chloride is greater than the initial dose of the trospium chloride, and wherein the increased dose of xanomeline is greater than the initial dose of the xanomeline.

Abstract: The present disclosure provides a method of treating a central nervous system disorder in a patient in need thereof. The method comprises orally administering between 75 mg and 300 mg xanomeline and between 20 mg and 200 mg trospium chloride to the patient during a 24-hour period. The central nervous system disorder is selected from schizophrenia, Alzheimer's disease, Huntington's disease, Parkinson's disease, and Lewy Body dementia, wherein use of the trospium chloride alleviates a side effect associated with use of the xanomeline.

Abstract: A method of forming an electrical transmission structure that includes forming an opening through an interlevel dielectric layer to expose at least one electrically conductive feature and forming a shield layer on the opening. A gouge is formed in the electrically conductive feature through the opening using a subtractive method during which the shield layer protects the interlevel dielectric layer from being damaged by the subtractive method. A contact is formed within the opening in electrical communication with the at least one electrically conductive feature.

Abstract: The present disclosure provides a method of treating a central nervous system disorder in a patient in need thereof. The method comprises orally administering between 75 mg and 300 mg xanomeline and between 20 mg and 200 mg trospium chloride to the patient during a 24-hour period. The central nervous system disorder is selected from schizophrenia, Alzheimer's disease, Huntington's disease, Parkinson's disease, and Lewy Body dementia, wherein use of the trospium chloride alleviates a side effect associated with use of the xanomeline.

Abstract: Compositions and methods for detecting Chlamydia trachomatis (CT) and Neisseria gonorrhoeae (NG) are provided. The present invention also provides methods and compositions for screening for infection/inflammation based on genomic copy number. Described herein is a method that entails assaying a sample obtained from the urogenital tract of the mammal for an indicator of genomic copy number, wherein a genomic copy number level that is higher than a control genomic copy number level is indicative of the presence of infection or inflammation of the urogenital tract.

Abstract: A chopper assembly for a crop residue distribution system of an agricultural combine may include a rotor shaft extending lengthwise along a rotational axis between a first end and a second end. The chopper assembly may also include a plurality of flail blades pivotally coupled to the rotor shaft. Each flail blade may be configured to pivot relative to the rotor shaft about a pivot axis, with the flail blades being spaced apart axially from one another between the first and second ends of the rotor shaft. In addition, the chopper assembly may include a plurality of spring tines coupled to the rotor shaft, with the spring tines being spaced apart from one another between the first and second ends of the rotor shaft.

Abstract: Provided herein is a method of treating a central nervous system disorder in a patient in need thereof, wherein the central nervous system disorder is selected from schizophrenia, Alzheimer's disease, Huntington's disease, Parkinson's disease, and Lewy Body dementia. The method comprises orally administering an initial dose of between 75 mg and 300 mg xanomeline and an initial dose of between 20 mg and 200 mg trospium chloride to the patient during a 24-hour period. Provided that the patient tolerates said administration, an increased dose of trospium chloride and an increased dose of xanomeline are orally administering to the patient, wherein the increased dose of trospium chloride is greater than the initial dose of the trospium chloride, and wherein the increased dose of xanomeline is greater than the initial dose of the xanomeline.

Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.

Abstract: Methods for the treatment of CNS disorders using combinations of muscarinic activators and inhibitors, and medicaments comprising muscarinic activators and inhibitors.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: An electronic device includes a substrate, a structure over the substrate having an edge wall defining at least a portion of an opening exposing a surface of the substrate, and a dielectric material adjacent and in contact with the edge wall and an adjacent portion of the surface of the substrate. The dielectric material has a profile tapering downward from adjacent the edge wall toward the substrate. Other electronic devices include a substrate and a solder mask over the substrate. The solder mask defines an opening therethrough. A supplemental mask is within the opening of the solder mask, and has a sidewall that slopes away from the solder mask. A conductive structure is adjacent and in contact with at least one of the solder mask or the supplemental mask.

Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.

Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.

Abstract: Methods for the treatment of CNS disorders using combinations of muscarinic activators and inhibitors, and medicaments comprising muscarinic activators and inhibitors.

Abstract: Stacked capacitor structures using TSVs are provided. In one aspect, a stacked capacitor structure includes: a first substrate having at least one first capacitor formed in a TSV in the first substrate; and a second substrate, bonded to the first substrate, having at least one second capacitor formed in a TSV in the second substrate, wherein the first capacitor and the second capacitor each comprises a first electrode and a dielectric that both surround a second electrode that is at a core of the TSV, wherein the dielectric separates the first electrode from the second electrode, and wherein the second substrate is bonded to the first substrate such that the first capacitor is stacked on the second capacitor. A method of forming a stacked capacitor structure is also provided.

Abstract: A method for operating a harvester may include initially operating the harvester in a discharge harvesting mode such that harvested crops are conveyed to a distal end of an elevator of the harvester and subsequently discharged from the harvester through a discharge opening defined by a storage hopper located at the distal end of the elevator. The method also includes reducing an operating speed of the elevator and blocking the discharge opening defined by the storage hopper upon receipt of an operator input associated with operating the harvester in a storage harvesting mode. Additionally, the method includes actively adjusting the operating speed of the elevator based on a crop flow parameter of the harvester as the harvested crops expelled from the distal end of the elevator are being stored within a storage volume of the storage hopper.

Abstract: A turbine with a variable inlet guide vane assembly in which the vane airfoils extend between inner and outer buttons, and in which a center of rotation of the airfoil is located aft of an aerodynamic center of pressure of the airfoil. The trailing edge of the airfoil extends into both of the buttons such that no gap is formed between the airfoil trailing edge region and a static part of the turbine during movement of the airfoil from an opened position to a closed position.

Abstract: A method of forming an electrical transmission structure that includes forming an opening through an interlevel dielectric layer to expose at least one electrically conductive feature and forming a shield layer on the opening. A gouge is formed in the electrically conductive feature through the opening using a subtractive method during which the shield layer protects the interlevel dielectric layer from being damaged by the subtractive method. A contact is formed within the opening in electrical communication with the at least one electrically conductive feature.