Abstract: A pixel circuit includes a pixel array and a color filter. The pixel array includes pixels arranged in rows and columns, and each pixel includes a photodiode configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photodiode to transfer the image charge out from the photodiode. The color filter array includes color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the pixels is coupled to a first readout circuit, and the plurality of pixels includes a first subset of the pixels not coupled to a second readout circuit and a second subset of the pixels coupled to the second readout circuit. Two diagonally arranged pixels are coupled together to share a floating diffusion, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

Abstract: A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels arranged in rows and columns, each pixel including four photodiodes, a floating diffusion, and four transfer transistors. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the plurality of pixels is coupled to a first readout circuit, and the plurality of pixels includes (i) a first subset of the pixels not coupled to a second readout circuit and (ii) a second subset of the pixels coupled to the second readout circuit. Floating diffusions of two diagonally arranged pixels are coupled together, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

Abstract: An imaging device includes a pixel array with 2×2 pixel circuits arranged in rows and columns. Each 2×2 pixel circuit includes 4 photodiodes. Bitlines are coupled to the 2×2 pixel circuits and a color filter array is disposed over photodiodes of the pixel array. The color filter array includes color filters having a first color, color filters having a second color, color filters having a third color. The photodiodes of each 2×2 pixel circuits are covered by one of the color filters. Photodiodes covered by color filters having the first color and photodiodes covered by color filters having the second color are configured to provide non-phase detection (non-PD) information. Photodiodes covered by color filters having the third color are configured to provide phase detection (PD) information. Half of the 2×2 pixel circuits have the photodiodes covered by color filters having the third color.

Abstract: An image sensor comprises: a control block generating a video interface enabled signal, a video interface for receiving the video interface enabled signal, a pixel array for providing a video stream to the video interface, an output port for receiving the video stream from the video interface and outputting the video stream to outside of the image sensor, a stream indicator pin for receiving the video interface enabled signal from the control block when the video interface is receiving the video interface enabled signal from the control block, where a terminal of the video interface receiving the video interface enabled signal is connected to the stream indicator pin by a conductor, and they are sealed in a package of the image sensor.

Abstract: An image sensor comprises: a control block generating a video interface enabled signal, a video interface for receiving the video interface enabled signal, a pixel array for providing a video stream to the video interface, an output port for receiving the video stream from the video interface and outputting the video stream to outside of the image sensor, a stream indicator pin for receiving the video interface enabled signal from the control block when the video interface is receiving the video interface enabled signal from the control block, where a terminal of the video interface receiving the video interface enabled signal is connected to the stream indicator pin by a conductor, and they are sealed in a package of the image sensor.

Abstract: An imaging device includes a pixel array with 2×2 pixel circuits arranged in rows and columns. Each 2×2 pixel circuit includes 4 photodiodes. Bitlines are coupled to the 2×2 pixel circuits and a color filter array is disposed over photodiodes of the pixel array. The color filter array includes color filters having a first color, color filters having a second color, color filters having a third color. The photodiodes of each 2×2 pixel circuits are covered by one of the color filters. Photodiodes covered by color filters having the first color and photodiodes covered by color filters having the second color are configured to provide non-phase detection (non-PD) information. Photodiodes covered by color filters having the third color are configured to provide phase detection (PD) information. Half of the 2×2 pixel circuits have the photodiodes covered by color filters having the third color.

Abstract: The pixel circuit of the image sensor includes one or more photoelectric conversion elements that generates charges in response to incident light, a first capacitance that receives and stores the charges generated in the one or more photoelectric conversion elements, a second capacitance that is connected to the first capacitance via a switch, and a comparator that compares the amount of charges stored in the first capacitance with a predetermined value. The second capacitance is connected to the first capacitance via the switch, and the pixel circuit includes a comparator that compares the amount of the charges stored in the first capacitance with a predetermined value. When the amount of the charges accumulated in the first capacitance in the comparator is greater than the predetermined value, the switch is turned on and the charges are accumulated by the capacitance that is the sum of the first capacitance and the second capacitance.

Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where a is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

Abstract: An optical system comprises an imaging lens for imaging an object to an image and a sensing pixel array for detecting lights from the object toward the image. The sensing pixel array comprises a first sensing pixel and a second sensing pixel, each sensing pixel comprising a microlens covering a one-dimensional series of photodiodes having n photodiodes. A photodiode at an end of the one-dimensional series of photodiodes of the first sensing pixel detects a first light from the object toward the image, and a photodiode at an opposite end of the one-dimensional series of photodiodes of the second sensing pixel detects a second light from the object toward the image, where the first light and the second light pass opposite parts of the imaging lens.

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

Abstract: An optical system comprises an imaging lens for imaging an object to an image and a sensing pixel array for detecting lights from the object toward the image. The sensing pixel array comprises a first sensing pixel and a second sensing pixel, each sensing pixel comprising a microlens covering a one-dimensional series of photodiodes having n photodiodes. A photodiode at an end of the one-dimensional series of photodiodes of the first sensing pixel detects a first light from the object toward the image, and a photodiode at an opposite end of the one-dimensional series of photodiodes of the second sensing pixel detects a second light from the object toward the image, where the first light and the second light pass opposite parts of the imaging lens.

Abstract: A photodiode array circuit includes a plurality of photodiode circuits, binning circuitry, and a plurality of output circuits. Each of the plurality of photodiode circuits is coupled to receive a different one of the plurality of transfer control signals as a proximate photodiode circuit, proximate in a first direction. The binning circuitry is coupled to electrically connect the plurality of photodiode circuits into groups of photodiode circuit sense nodes in response to a binning control signal. Each of the plurality of output circuits is coupled to one of the groups of photodiode circuit sense nodes. Each of the plurality of output circuits are coupled to receive the output charge from the photodiode circuits in the one of the groups of photodiode circuit sense nodes and output an output signal to a bitline in response to the output charge and an row select signal.

Abstract: A photodiode array circuit includes a plurality of photodiode circuits, binning circuitry, and a plurality of output circuits. Each of the plurality of photodiode circuits is coupled to receive a different one of the plurality of transfer control signals as a proximate photodiode circuit, proximate in a first direction. The binning circuitry is coupled to electrically connect the plurality of photodiode circuits into groups of photodiode circuit sense nodes in response to a binning control signal. Each of the plurality of output circuits is coupled to one of the groups of photodiode circuit sense nodes. Each of the plurality of output circuits are coupled to receive the output charge from the photodiode circuits in the one of the groups of photodiode circuit sense nodes and output an output signal to a bitline in response to the output charge and an row select signal.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel.

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract: An image sensor includes a pixel array including a plurality of pixels. A bit line coupled to a column of pixels is separated in to a plurality of electrically portions that are coupled to corresponding portions of rows of the pixel array. A first switching circuit of a readout circuit is coupled to the bit line. A first switching circuit is configured to couple a bit line current source to the bit line to provide a DC current coupled to flow through the bit line and through the first switching circuit during a readout operation of a pixel coupled to the bit line. A second switching circuit is configured to couple and ADC to the bit line during the readout operation of the pixel. Substantially none of the DC current provided by the bit line current source flows through the second switching circuit during the readout operation of the pixel.