Patents by Inventor Eiichi Funatsu
Eiichi Funatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160269665Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Patent number: 9413992Abstract: A method of reading pixel data from a pixel array includes exposing each one of a plurality of regions of pixels a respective exposure time. Pixel data is read from the plurality of regions of pixels. The pixel data is interpolated from a first one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the first one of the plurality of regions of pixels to generate a first image having the first exposure time. The pixel data is interpolated from the second one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the second one of the plurality of regions to generate a second image having the second exposure time. The images are combined to produce a high dynamic range image.Type: GrantFiled: April 2, 2014Date of Patent: August 9, 2016Assignee: OmniVision Technologies, Inc.Inventors: Jiangtao Kuang, Donghui Wu, Chao Wang, Eiichi Funatsu
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Publication number: 20160197117Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Inventors: Masashi Nakata, Eiichi Funatsu
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Patent number: 9374505Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: GrantFiled: September 24, 2015Date of Patent: June 21, 2016Assignee: Sony CorporationInventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Publication number: 20160165162Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.Type: ApplicationFiled: October 28, 2015Publication date: June 9, 2016Inventors: Keiji Mabuchi, Eiichi FUNATSU, Kasai Masanori
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Patent number: 9319606Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.Type: GrantFiled: October 31, 2014Date of Patent: April 19, 2016Assignee: SONY CORPORATIONInventors: Masashi Nakata, Eiichi Funatsu
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Patent number: 9282256Abstract: Generating an image with an imaging system includes capturing a first sub-image during a first exposure with a first pixel subset of an image sensor of the imaging system, capturing a second sub-image during a second exposure with a second pixel subset of the image sensor, capturing a third sub-image during a third exposure with a third pixel subset of the image sensor, and capturing a fourth sub-image during a fourth exposure with a fourth pixel subset of the image sensor. The first, second, third, and fourth exposures have different durations. A preferred exposure is selected from between the first, second, third and fourth exposures by analyzing the first, second, third, and fourth sub-images. Then, a full-resolution image is captured at the preferred exposure. An HDR image is generated based on the full-resolution image and the sub-images.Type: GrantFiled: December 22, 2014Date of Patent: March 8, 2016Assignee: OmniVision Technologies, Inc.Inventors: Jizhang Shan, Eiichi Funatsu, Yiu Fai Wong
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Publication number: 20160014304Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: ApplicationFiled: September 24, 2015Publication date: January 14, 2016Inventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Publication number: 20150365586Abstract: A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.Type: ApplicationFiled: August 25, 2015Publication date: December 17, 2015Inventors: Tiejun Dai, Eiichi Funatsu, Donghui Wu, Zheng Yang, Xiao Xie
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Patent number: 9185369Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: GrantFiled: June 5, 2013Date of Patent: November 10, 2015Assignee: SONY CORPORATIONInventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Patent number: 9124823Abstract: A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.Type: GrantFiled: July 25, 2013Date of Patent: September 1, 2015Assignee: OmniVision Technologies, Inc.Inventors: Tiejun Dai, Eiichi Funatsu, Donghui Wu, Zheng Yang, Xiao Xie
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Publication number: 20150201139Abstract: A method of reading out a pixel includes photogenerating charge carriers during a single integration time in photodetectors of each one of a plurality of sub-pixels included in the pixel. Each one of the plurality of sub-pixels of the pixel has a same color filter. A floating diffusion node of the pixel is reset. The floating diffusion node is sampled to generate a reset output sample signal. Charge carriers that were photogenerated in a first portion of the plurality of sub-pixels are transferred to the floating diffusion node. The floating diffusion node is sampled to generate a first output sample signal. Charge carriers that were photogenerated in a second portion of the plurality of sub-pixels are transferred to the floating diffusion node. The floating diffusion node is sampled to generate a second output sample signal.Type: ApplicationFiled: November 26, 2014Publication date: July 16, 2015Inventors: Eiichi Funatsu, Yaowu Mo
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Publication number: 20150171131Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.Type: ApplicationFiled: January 30, 2015Publication date: June 18, 2015Inventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Patent number: 8994863Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: GrantFiled: January 11, 2010Date of Patent: March 31, 2015Assignee: Sony CorporationInventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Patent number: 8969879Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.Type: GrantFiled: April 15, 2011Date of Patent: March 3, 2015Assignee: Sony CorporationInventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Publication number: 20150049226Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.Type: ApplicationFiled: October 31, 2014Publication date: February 19, 2015Inventors: Masashi Nakata, Eiichi Funatsu
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Patent number: 8922685Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.Type: GrantFiled: October 7, 2011Date of Patent: December 30, 2014Assignee: Sony CorporationInventors: Masashi Nakata, Eiichi Funatsu
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Publication number: 20140340553Abstract: A method of reading pixel data from a pixel array includes exposing each one of a plurality of regions of pixels a respective exposure time. Pixel data is read from the plurality of regions of pixels. The pixel data is interpolated from a first one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the first one of the plurality of regions of pixels to generate a first image having the first exposure time. The pixel data is interpolated from the second one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the second one of the plurality of regions to generate a second image having the second exposure time. The images are combined to produce a high dynamic range image.Type: ApplicationFiled: April 2, 2014Publication date: November 20, 2014Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Jiangtao Kuang, Donghui Wu, Chao Wang, Eiichi Funatsu
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Publication number: 20140340549Abstract: A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.Type: ApplicationFiled: July 25, 2013Publication date: November 20, 2014Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Tiejun Dai, Eiichi Funatsu, Donghui Wu, Zheng Yang, Xiao Xie
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Patent number: 8623691Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.Type: GrantFiled: December 11, 2012Date of Patent: January 7, 2014Assignee: Sony CorporationInventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato