Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: A solid-state image pickup device and a pixel defect testing method thereof are disclosed. A solid-state image pickup device including: a pixel unit having a plurality of unit pixels that perform photoelectric conversion; a driving circuit for driving the pixel unit to control output of a pixel output signal; an output signal processing circuit for subjecting the pixel output signal outputted from the pixel unit according to the driving of the driving circuit to predetermined signal processing, and outputting a resulting pixel output signal; a pixel defect determining circuit for capturing the pixel output signal outputted from the pixel unit according to the driving of the driving circuit, and determining a pixel defect by comparing the pixel output signal with a predetermined reference signal; and a timing generator for supplying a predetermined operating pulse to the driving circuit, the output signal processing circuit, and the pixel defect determining circuit.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: An image processor includes unit pixel circuits, each circuit outputting a pixel value, according to incident light, to an output line; and read circuits in each row and each column, each of which can read out a pixel value of each unit pixel circuit and a result of computing for projection for each row and each column. The unit pixel circuits of each row and column and the corresponding read circuits are connected to each other by discrete output lines. The result of computing for projection readout by the compression processing is an average of pixel values in the unit pixel circuits of each row and of each column.

Abstract: An imaging device reads an output level of a pixel circuit constituting a pixel array by supplying current to the pixel circuit. It reads a signal level and reset level from the pixel circuit by supplying it with the current from a current source circuit, and stores them into a line memory. A pixel level of the pixel circuit is obtained by a differential amplifier that outputs the difference between the signal level and reset level of the same pixel circuit. The gate potential of a current copier transistor that supplies the read current is set at a value that enables the read current to take a constant value from column to column of the pixel array. The image device can suppress variations in the current copier circuit provided for each array column of the pixel circuits, thereby reducing string-like noise in the image picked up.

Abstract: When an operator operates a pointing device, a direction computing section computes a movement vector from an image photographed by an image sensor, and when the movement vector is larger than a threshold, a direction correcting section determines the movement vector as invalid based on the recognition that the movement vector was caused by an abrupt change in the illumination or other conditions, and outputs only movement vectors that are smaller than the threshold to a coordinate position updating section.

Abstract: A direction instructing apparatus includes an image inputting section for inputting data for a two-dimensional image picked up with an image sensor having an image processing function, a projection computing section for computing projections for the two-dimensional image as a whole in directions according to the data inputted into the image inputting section, a movement computing section for computing a one-dimensional movement vector for each projection according to the projection computed in the projection computing section, and a direction estimating section for estimating a two-dimensional movement vector for the two-dimensional image according to the one-dimensional movement vector computed in the movement computing section.

Abstract: A photodetector device for converting incident light to an electrical signal has two pn junctions or two MOS junctions fabricated in a silicon substrate. Preferably, a control terminal is provided between the two junctions. A photodetection circuit including a photodetector device has a variable sensitivity and can change the polarity of the output of the photodetector device. For example, the photodetection circuits may have a circuit for providing a bias voltage of one of the two polarities to the photodetector device. The photodetection circuit may have a circuit for changing the polarity of the output signal from the photodetector device.

Abstract: An apparatus for sensing and processing images is provided with a photo detector array arranged in a matrix form, a control circuit for feeding a row of the array with voltage for sensitivity control, and a neural network for processing current flowing from a column of the array to the ground in order to obtain an apparatus for sensing and processing images having a simple configuration, a high frame speed, the capability of forming a focus of attention, and high throughput of data and possibility of connecting to the neural network.

Abstract: In an image sensing apparatus, an array of two-dimensional matrix of photosensitive devices is used to detect an image. Each photosensitive device comprises a photosensor accumulating carriers when exposed to a light, control terminals, and an output terminal. A signal generator supplies a vector or a one-dimensional data to the control terminals in the array to output pixel data of the two-dimensional matrix, and the pixel signal is output through the output terminal. The control terminals of the photosensors arranged along each line are connected commonly, while the output terminals thereof arranged along each column are connected commonly. A controller supplies control signals to the control terminals. Then, pixel signal for columns designated by a control signal are output through an output circuit connected to the control terminals.

Abstract: A photodetector has a semiconductor substrate which produces light-induced charge upon the absorption of incident light. A first electrode and a second electrode are attached to the surface of the semiconductor substrate so as to form metal-semiconductor junctions. When control voltage V.sub.B, which is variable in a positive range through a negative range, is applied to the first electrode, a photocurrent flows through the second electrode and depletion layers are formed in the surface of the semiconductor substrate. The control voltage V.sub.B applied to the first electrode increases the expanse of one of the depletion layers relative to that of the other to cause the light-induced charge to drift toward one of the depletion layers or the other. Consequently, a positive or negative current is delivered through the second electrode. Thus, the photosensitivity of the photodetector can be controlled by the control voltage V.sub.B.