Abstract: The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance of load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: A ferroelectric memory device includes a simple matrix type memory cell array. Provided that the maximum absolute value of a voltage applied between a first signal electrode and a second signal electrode is Vs, polarization P of a ferroelectric capacitor formed of the first electrode, the second electrode, and ferroelectric layer is within the range of 0.1P(+Vs)<P(?1/3Vs) when the applied voltage is changed from +Vs to ?1/3Vs, and 0.1P(?Vs)>P(+1/3Vs) when the applied voltage is changed from ?Vs to +1/3Vs.

Abstract: A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells.

Abstract: A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.

Abstract: A ferroelectric memory of the present invention includes a sheet-shaped device including a memory cell array which includes a ferroelectric capacitor, and a circuit section which is formed on the memory cell array and includes a thin-film transistor.

Abstract: A ferroelectric layer including space charges. The space charges show a concentration peak at least at one of an upper portion and a lower portion of the ferroelectric layer in a direction of the thickness of the ferroelectric layer.

Abstract: A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

Abstract: A method of manufacturing a ceramic coating material which includes stirring a material including a complex oxide in the presence of a catalyst containing platinum group elements. The material is a sol-gel material which includes at least one of a hydrolysate and a polycondensate of the complex oxide.

Abstract: A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

Abstract: A ceramic material coating method of forming a coating film on a base by applying a ceramic material including a complex oxide to the base by spin coating, the method includes: a first rotational step of rotating the base at a predetermined rotational speed; a second rotational step of rotating the base at a rotational speed lower than the rotational speed in the first rotational step; and a third rotational step of rotating the base at a rotational speed higher than the rotational speed in the second rotational step.

Abstract: A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

Abstract: A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

Abstract: A method of manufacturing a ceramic film includes providing a treatment target in which a raw material body including a complex oxide is applied to a substrate, and crystallizing the raw material body by holding the treatment target in a chamber and subjecting the treatment to a heat treatment at a predetermined pressure in a gas which is pressurized at two atmospheres or more and includes at least an oxidizing gas. The gas is supplied to the chamber after being heated to a predetermined temperature in advance.

Abstract: The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

Abstract: A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference &Dgr;V occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.

Abstract: A ferroelectric memory includes a substrate and a sheet-shaped device formed over the substrate through an adhesive layer. The sheet-shaped device includes a memory cell array in which a ferroelectric layer is disposed at least in intersecting regions of a plurality of lower electrodes and a plurality of upper electrodes which are formed in the shape of lines, and a peripheral circuit section for the memory cell array.

Abstract: A method of manufacturing a ceramic film including crystallizing a material body including a complex oxide by performing heat treatment on the material body at a pressure of two atmospheres or more. The complex oxide includes lead (Pb) or bismuth (Bi). The material body is a mixture of a sol-gel material and a metallo-organic decomposition material in which at least Pb or Bi in the complex oxide is in an amount of at most 5 percent in excess of Pb or Bi in the stoichiometric composition.

Abstract: A method of manufacturing a ferroelectric capacitor. In this method, a lower electrode is formed on a base at first. A ferroelectric film which includes a PZTN complex oxide including lead, zirconium, titanium, and niobium on the lower electrode is formed, and then an upper electrode is formed on the ferroelectric film. A protective film is then formed to cover the lower electrode, the ferroelectric film, and the upper electrode, and heat treatment for crystallizing the PZTN complex oxide is performed at least after forming the protective film.

Abstract: A ferroelectric film manufactured by using a supercritical fluid. The supercritical fluid is a fluid which includes a ferroelectric element and is pressurized at a pressure ranging from the critical pressure to four times the critical pressure, for example.