Abstract: Method for the preparation of electrodeposited or galvanically deposited bumps for the bonding of integrated circuits, characterized by two subsequent metal depositions, deposited without an external current source (chemical metal deposition) on a metallization 1, the first deposition being thicker than the second and the second deposition being more even or more regular throughout a large area than the first one.

Abstract: A method for the temporary fixing of an electronic component (10) having elevated contact metallizations (11) to a substrate (17) provided with terminal surfaces (16) for a subsequent thermal connection of the contact metallizations to the terminal surfaces, wherein a bonding agent is applied to the component and/or the substrate and wherein the bonding agent used is an alcoholic liquid medium containing an alcohol (13) whose surface tension is used to form bonding forces between the contact metallizations and the terminal surfaces and whose boiling point is below the melting temperature of the contact metallizations (11).

Abstract: Chip-support arrangement (23) with a chip support (23) for the manufacture of a chip casing, said chip support being provided on a support foil (20) with conducting paths (21) which are connected on the front side of the support foil facing a chip (39) to contact-surface metallizations (40) of the chip and which with their free ends form a connection-surface arrangement (42) distributed in planar manner for the purpose of connection to an electronic component or a substrate, whereby the conducting paths (21) are arranged on the reverse side of the support foil (20), recesses (28) in the support foil (20) are provided in the region of the contact-surface metallizations (40), the conducting paths for forming the connection-surface arrangement (42) are covered with a perforated mask (36) and the thickness (s) of the support foil is smaller than or substantially equal to the height (h) of the contact-surface metallizations (40) on the surface of the chip.

Abstract: The invention concerns flip chip technology using non-conductive adhesives and gold ball bumps or connectors. The concept is to simultaneously attach and interconnect bare chips with gold ball bumps to organic substrates. The chip is fixed by cooling the insulative adhesive. Environmental testing has demonstrated that performance characteristics were acceptable after 1000 hours of continuous exposure to humidity, and were excellent after 1000 temperature cycles. Such stable interconnections can only be realized by the compliance of the flip chip joint. This stability, can be achieved by precise control of the bonding parameters such as temperature and pressure. This bonding technique allows quality attachment of bare chips on low cost organic substrates.

Abstract: The invention relates to a solder bump for flip-chip assembly and consist of a core containing a high proportion of a soft and electrically well conducting metal, particularly gold, and a diffusion barrier layer deposited on the solder bump core. As is known, the diffusion barrier layer functions to prevent intermetallic compounds between the gold of the solder bump core and the solder material, especially tin-lead solder material, which would otherwise reduce the mechanical stability of the solder connection. A pre-treatment with a cleaning solvent or in a nucleation bath has hitherto been necessary. to provide a good bond between the diffusion barrier layer, usually nickel, and the solder bump core. With the invention, this pretreatment process step is no longer necessary, since small amounts of a material are added to the solder bump core which acts as a nucleation material for the diffusion barrier layer.

Abstract: Process for remelting a contact surface metallization (13) applied to a strate (10) in an inert or reducing medium, wherein the medium (18) is formed as alcoholic medium whose boiling point is the same as or above the melting point of the contact surface metallization (13), the medium (18) is applied to the contact surface metallization (13) applied to a contact surface (11, 12) of the substrate (10) outside the inert or reducing medium in such a way that the contact surface metallization (13) is screened with respect to the environment, and the medium (18) is tempered to a temperature which is the same as or higher than the melting point of the contact surface metallization (13).

Abstract: Method of flux-free contacting of components on a substrate, having the following process steps:producing elevated contact metal bumps of a flux-treated gold-tin solder material on tags of the component;removing flux residues on the surface of the component;melting the elevated contact metal bumps and contacting the contact metal bumps with tags of the substrate.

Abstract: A method of joining an electronic component (10) provided with contact surfaces (12) to a substrate (11) comprising contact surfaces (14) via contact metal coatings (16, 17) formed between the contact surfaces and made of a solderable or weldable joining material (15), the electronic component and the substrate being pressed together and heated, and during the joining operation a layer (18) of a medium (19) containing a polyalcohol is disposed at least between the joining material (15) and the contact surfaces (12) of the electronic component (10) or the substrate (11).

Abstract: The process for making a high temperature-resistant metal layer on a ceramic surface includes the step of depositing the metal layer electrochemically from an electrochemical bath containing at least one metal salt containing the metal to be deposited, advantageously a metal salt of a resin acid, and a conductivity raising substance, e.g. methane sulfonic acid, dissolved in an organic solvent containing polar groups and having less than 1% by weight water. The resultant product is bubble-free and stable to high temperature.