Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: A photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.

Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·?O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p

Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

Abstract: A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

Abstract: New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO3? moiety; 2) one or more fluorinated carbons; and 3) one or more of the fluorinated carbons either directly or indirectly substituted by an ester keto group.

Abstract: New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.

Abstract: Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component.

Abstract: New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.

Abstract: Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.

Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)nSO3?Z+??(I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10, k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater.

Abstract: Dendritic compounds are provided. The dendritic compounds include an anionic dendron that has a focal point having an anionic group and a linking group, and a photoreactive cation. The dendritic compounds find particular use as photoacid generators. Also provided are photoresist compositions that include such a dendritic compound, as well as methods of forming electronic devices with the photoresist compositions. The dendritic compounds, photoresist compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: A photoacid generator has the formula (I): wherein R1, R2, R3, L1, L2, L3 X, Z+, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.