Abstract: A memory with asymmetric command latency characteristics for WRITE operations utilizing WOM coding methodologies to reduce programming latency across a number of WRITE operations.

Abstract: A method and apparatus for obtaining data from a memory, estimating a probability of data values of the obtained data based on at least one of a source log-likelihood ratio and a channel log-likelihood ratio, wherein each bit in the obtained data has an associated log-likelihood ratio, determining at least one data pattern parameter for the data and performing a decoding process using the at least one data pattern parameters to determine a decoded data set.

Abstract: A memory with asymmetric command latency characteristics for WRITE operations utilizing WOM coding methodologies to reduce programming latency across a number of WRITE operations.

Abstract: A memory array includes strings that are configured to store keywords and inverse keywords corresponding to keys according to content addressable memory (CAM) storages schemes. A read circuit performs a CAM read operation over a plurality of iterations to determine which of the keywords are matching keywords that match a target keyword. During the iterations, a read controller biases word lines according to a plurality of modified word line bias setting that are each modified from an initial word line bias setting corresponding to the target keyword. At the end of the CAM read operation, the read controller detects which of the keywords are matching keywords, even if the strings are storing the keywords or inverse keywords with up a certain number of bit errors.

Abstract: A device that includes a non-volatile memory and a controller. The controller is coupled to the non-volatile memory. The controller includes a non-transitory computer readable medium and a processor. The controller includes computer executable instructions stored in the computer readable medium to, using the processor, retrieve a flash memory page from the non-volatile memory, determine a memory parameter associated with the flash memory pages, determine a read threshold voltage scanning order based on the memory parameter, and perform read threshold voltage calibration according to the read threshold voltage scanning order.

Abstract: A method for punctured bit estimation includes receiving a punctured codeword. The method further includes generating a reconstructed codeword using the punctured codeword and at least one punctured bit having a default logic value. The method further includes generating a syndrome vector for the reconstructed codeword. The method further includes determining, using the syndrome vector, a number of unsatisfied parity-checks for the at least one punctured bit. The method further includes determining, for the at least one punctured bit, a bit value using, at least, the number of unsatisfied parity-checks associated with the at least one punctured bit.

Abstract: A controller for a phase change memory forms a dedicated burst write partition in the phase change memory and initializes memory cells of the dedicated burst write partition to a SET state. Programming of selected memory cells in the dedicated burst write partition is carried out using only RESET pulses.

Abstract: Disclosed herein is a memory device and a method of descrambling and decoding encoded data. In one aspect, encoded data is received. A scrambling seed is obtained from the encoded data prior to decoding the encoded data. The encoded data is descrambled according to the scrambling seed, and the descrambled data is decoded. The descrambled data may be decoded according to statistics of the descrambled data.

Abstract: A method and apparatus for obtaining data from a memory, estimating a probability of data values of the obtained data based on at least one of a source log-likelihood ratio and a channel log-likelihood ratio, wherein each bit in the obtained data has an associated log-likelihood ratio, determining at least one data pattern parameter for the data and performing a decoding process using the at least one data pattern parameters to determine a decoded data set.

Abstract: A non-volatile memory system may include a non-volatile memory die storing a requested data set that a host requests to be read. In response to the host request, a copy of a data set may be retrieved from the non-volatile memory die without performing error correction on an entry identifying a physical address where the data set is stored. If the data set copy matches the requested data set, the data set copy may be sent to the host. If the data set copy does not match the requested data set, then error correction may be performed on a copy of the entry to identify the correct physical address where the requested data set is stored. A copy of the requested data set may then be retrieved and sent to the host.

Abstract: Systems and methods for predicting read commands and pre-fetching data when a memory device is receiving random read commands to non-sequentially addressed data locations are disclosed. A limited length sequence of prior read commands are generated and compared to a read command history datastore. When a prior pattern of read commands is found corresponding to the search sequence, a next read command that previously followed that search sequence may be used as a predicted next read command and data pre-fetched based on the read command data location information associated with that prior read command that is being used as the predicted read command.

Abstract: Enhanced error correction for data stored in storage devices are presented herein. A storage controller retrieves an initial encoded data segment stored on a storage media, computes information relating to errors resultant from decoding the initial encoded data segment, and stores the information in a cache. The storage controller retrieves subsequent encoded data segments stored on the storage media, augments a decoder using at least the information retrieved from the cache, and decodes the subsequent encoded data with the decoder to produce resultant data.

Abstract: A storage system and method for handling a burst of errors is provided. In one embodiment, the method comprises generating a protograph using an error code generation method; generating a first partially-lifted protograph based on the generated protograph that avoids a first burst of errors; generating a fully-lifted protograph based on the generated protograph and the generated first partially-lifted protograph; and providing the fully-lifted protograph to a storage system comprising a memory.

Abstract: A data storage device is configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold. The data storage device is further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.

Abstract: Technology is described herein for a generalized low-density parity-check (GLDPC) decoder. A GLDPC decoder comprises an LDPC decoder and a syndrome decoder. The LDPC decoder is configured to generate a codeword for encoded data. The syndrome decoder is configured to decode a syndrome of punctured check nodes based on a linear block code having more than one information bit. The GLDPC decoder is configured to control the LDPC decoder to compute an initial value of the syndrome of the punctured check nodes based on an initial estimate of the codeword from the LDPC decoder. The GLDPC decoder is configured to alternate between controlling the syndrome decoder to correct the syndrome and controlling the LDPC decoder to update the codeword based on the corrected syndrome. The GLDPC decoder is configured to provide a decoded version of the encoded data based on a final estimate of the codeword.

Abstract: The disclosure relates in some aspects to on-chip processing circuitry formed within the die of a non-volatile (NVM) array to perform data searches. In some aspects, the die includes components configured to sense wordlines of stored data in the NVM array by applying voltages on the wordlines serially, and then search for an input data pattern within the serially-sensed wordlines. In some examples, the components of the die include latches and circuits configured to perform bitwise latch logic search operations. In other examples, the search components are configured with under-the-array or next-to-the-array dedicated search circuitry that uses registers and/or random access memory (RAM). Other aspects relate to a separate controller device for controlling the on-chip NVM search operations. For example, the controller may determine whether to search for data using search components of the NVM die or processors of the controller based, e.g., on a degree of fragmentation of data.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for seed scrambling. An apparatus includes a memory element. An apparatus includes a scrambler component. A scrambler component includes an input circuit that receives a random seed. A scrambler component includes a matrix circuit that generates a new seed based on a matrix operation performed on a seed. A scrambler component includes a rotation circuit that forms a shifted seed. A shifted seed is formed by shifting a new seed based on a seed.

Abstract: A controller may detect unreliable bits of data, memory cells, or bit lines during an error correction process of a read operation based on an error correction code used to generate parity bits for the data. In some embodiments, the controller may use the error correction code to determine a distribution of unsatisfied checks. Based on the distribution, the controller may detect group(s) of bits that more closely resemble a defective group of bits rather than a non-defective group of bits. Based on the detection, the controller may set reliability metrics to values that indicate low levels or reliability, which in turn may increase the probability of successfully correcting the errors and reduce the amount of work the controller needs to do in order to complete the error correction process.

Abstract: A non-volatile storage apparatus comprises a non-volatile storage and a control circuit connected to the non-volatile storage. The non-volatile storage structure is organized into multiple partitions. Each partition is preassigned to a different data shaping level. Data to be stored in the non-volatile storage is shaped based on its entropy. The control circuit is configured to write shaped data to a partition of the multiple partitions that is preassigned to a same shaping level as the shaped data.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.