Abstract: A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.

Abstract: A storage system and method for balanced quad-level cell (QLC) coding with margin for an internal data load (IDL) read are provided. In one example, an MLC-Fine programming approach uses a balanced 3-4-4-4 coding, where the data is encoded by assigning a unique binary sequence per state. The IDL read is supported by using a unique 3-4-4-4 coding that provides at least a three-state gap between the MLC states, while using the same ECC redundancy per page. This allows for a reduced write buffer by supporting the IDL read and provides a balanced bit error rate (BER) due to the balanced mapping.

Abstract: An apparatus includes memory arrays and a power-performance-endurance manager module. The power-performance-endurance manager module stores a power-endurance state descriptor data structure, which includes endurance levels associated with power-endurance modes. The manager module dynamically configures the apparatus to operate the memory arrays according to one of the power-endurance modes based on a desired endurance level.

Abstract: Dual sense bin balancing (DSBB) to adjust a read level between memory states of an array of NAND flash memory cells implemented in a logic circuit of a NAND flash die or in a storage device controller. Reading a randomized data pattern stored in an array of memory cells includes performing one or more iterations of a DSBB to provide a read level. Each iteration of the DSBB includes performing a first sense read, performing a second sense read, determining a read error, and adjusting the initial read level. The first sense read is performed at a first offset of an initial read level of memory cells to determine a first number of memory cells relative to the first offset. The second sense read is performed at a second offset of the initial read level of memory cells to determine a second number of memory cells relative to the second offset. A read error of the initial read level is determined from the first sense read and the second sense read.

Abstract: A storage system and method for direct quad-level cell (QLC) programming are provided. In one example, a controller of the storage system is configured to create codewords for lower, middle, and upper pages of data; program the codewords in the memory of the storage system using a triple-level cell programming operation; read the programming of the codewords for the lower, middle, and upper pages of data in the memory; create a codeword for a top page of data; and program the codeword in the memory.

Abstract: A method and apparatus for determining the sector size and concomitant host metadata size to determine the difference between total size of the data block to be stored, and using the difference for parity data. This allows an increase in parity bits available for smaller sector sizes and/or data with smaller host metadata sizes. Because the amount of space available for additional parity bits is known, data with lower numbers of parity bits may be assigned to higher quality portions a memory array written with longer programming trim times, and/or written to memory dies with good redundant columns, further increasing performance and reliability.

Abstract: A storage system and method for balanced quad-level cell (QLC) coding with margin for an internal data load (IDL) read are provided. In one example, an MLC-Fine programming approach uses a balanced 3-4-4-4 coding, where the data is encoded by assigning a unique binary sequence per state. The IDL read is supported by using a unique 3-4-4-4 coding that provides at least a three-state gap between the MLC states, while using the same ECC redundancy per page. This allows for a reduced write buffer by supporting the IDL read and provides a balanced bit error rate (BER) due to the balanced mapping.

Abstract: An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die based on one or more operational parameters. The control die is configured to calibrate the one or more operational parameters for the memory die. The control die is also configured to perform testing of the memory die using the calibrated one or more operational parameters.

Abstract: Example systems and methods provide differentiated data recovery configurations based on memory health data. A distributed storage system, such as a cloud-based storage system, stores backup data from a remote storage device using a first data recovery configuration. Based on memory health data collected from the remote storage device, a change in a memory health state of the remote storage device may be determined. Responsive to the change in the memory health state, a different data recovery configuration may be used for storing backup data going forward and reallocating previously stored backup data in the distributed storage system.

Abstract: Technology for error correcting data stored in memory dies is disclosed. Codewords, which may contain data bits and parity bits, are stored on a memory die. The memory die is bonded to a control die through bond pads that allow communication between the memory die and the control die. The codewords are decoded at the control die based on the parity bits. If the control die successfully decodes a codeword, the control die may send the data bits but not the parity bits to a memory controller. By not sending the parity bits to the memory controller, substantial bandwidth is saved. Also, substantial power may be saved. For example, the interface between the control die and the memory controller could be a high speed interface.

Abstract: Power regulation in an integrated memory assembly having control semiconductor dies and memory semiconductor is disclosed herein. A master control die regulates power usage by the integrated memory assembly. Each control die reports information about its expected power usage to the master control die. The master control die determines a plan that meets a power criterion for the integrated memory assembly. The plan may maximize the power usage in each time period, while staying within a power budget. The plan can include selecting which of the memory dies perform a memory operation (or phase of a memory operation) during a given time period. The master control die may send a die scheduling plan to each of the other control dies. Each die scheduling plan indicates when memory operations and/or phases of memory operations are to be performed.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (VT) of a memory cell under a first parameter at a read temperature and measure a second VT of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A VT correction term for the memory cell is determined based upon the first VT measurement and the second VT measurement. A read VT of the memory cell is adjusted by using the VT correction term.

Abstract: A memory controller includes, in one embodiment, a memory interface, a plurality of decoders, and a controller circuit. The memory interface is configured to interface with a memory having a plurality of wordlines. Each decoder of the plurality of decoders is configured to determine a bit error rate (BER). The controller circuit configured to generate a plurality of bit-error-rate estimation scan (BES) hypotheses for one wordline of the plurality of wordlines, divide the plurality of BES hypotheses among the plurality of decoders, receive BER results from the plurality of decoders based on the plurality of BES hypotheses, and adjust one or more read locations of the one wordline based on the BER results from the plurality of decoders.

Abstract: A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.

Abstract: A programmable and reprogrammable processor on a control semiconductor die is disclosed. The processor controls various operations on a memory semiconductor die to which it is bonded, such as read, write, and erase. The processor issues control signals to operate circuits such as voltage regulators, sense amplifiers, and data latches. Because the processor is reprogrammable, it is possible to modify the operation of the circuits. For example, the processor can execute updated instructions to control the voltage regulators to modify the timing and/or magnitude of voltages applied to control lines in the memory semiconductor die. In one aspect, a page mapping scheme is updated in order to more evenly distribute a bit error rate (BER) across the pages. In one aspect, a read equalization scheme is updated. In one aspect, a technique for reading soft bits is updated.

Abstract: A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly comprises a memory die bonded to a control die with bond pads. The control die includes one or more control circuits for controlling the operation of the memory die. The one or more control circuits are configured to receive data to be programmed into the memory die, select a number of parity bits, encode the data to add error correction information and form a codeword that includes the number of parity bits, shape the codeword, and program the shaped codeword into the memory die.

Abstract: An error correcting code (ECC) decoder for a non-volatile memory device is configured to decode data stored by the non-volatile memory device using a parity check matrix with columns of different column weights. The ECC decoder is further configured to artificially slow processing of one or more of the columns of the parity check matrix in response to column weights for the one or more columns satisfying a threshold.

Abstract: A programmable and reprogrammable processor on a control semiconductor die is disclosed. The processor controls various operations on a memory semiconductor die to which it is bonded, such as read, write, and erase. The processor issues control signals to operate circuits such as voltage regulators, sense amplifiers, and data latches. Because the processor is reprogrammable, it is possible to modify the operation of the circuits. For example, the processor can execute updated instructions to control the voltage regulators to modify the timing and/or magnitude of voltages applied to control lines in the memory semiconductor die. In one aspect, a page mapping scheme is updated in order to more evenly distribute a bit error rate (BER) across the pages. In one aspect, a read equalization scheme is updated. In one aspect, a technique for reading soft bits is updated.

Abstract: A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller provides data to the control die for storage on the memory die. Data is initially stored on the memory die as single bit per memory cell data to increase the performance of the programming process. Subsequently, the control die performs an adaptive folding process which comprises reading the single bit per memory cell data from the memory die, adaptively performing one of multiple decoding options, and programming the data back to the memory die as multiple bit per memory cell data.

Abstract: A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.