Abstract: A decoding system and method of a non-volatile memory are provided in which information regarding a characteristic of a non-volatile memory is used to determine an initial log-likelihood-ratio (LLR) table from among a number of LLR tables. The decoding is then performed using the determined initial LLR table.

Abstract: The disclosure relates in some aspects to on-chip processing circuitry formed within the die of a non-volatile (NVM) array to perform data searches. In some aspects, the die includes components configured to sense wordlines of stored data in the NVM array by applying voltages on the wordlines serially, and then search for an input data pattern within the serially-sensed wordlines. In some examples, the components of the die include latches and circuits configured to perform bitwise latch logic search operations. In other examples, the search components are configured with under-the-array or next-to-the-array dedicated search circuitry that uses registers and/or random access memory (RAM). Other aspects relate to a separate controller device for controlling the on-chip NVM search operations. For example, the controller may determine whether to search for data using search components of the NVM die or processors of the controller based, e.g., on a degree of fragmentation of data.

Abstract: A storage system has a controller with an encoder. The encoder is configured to perform first and second stages of an encoding process in parallel on pipelined data blocks. In this way, while the first stage of the encoding process is being performed on a first data block, the second stage of the encoding process is performed on a second data block.

Abstract: Technology for physical defect detection in an integrated memory assembly having a control semiconductor die and a memory semiconductor die is disclosed. The control die compares actual current usage during a memory operation (such as a program operation) with expected current usage. In the event that the actual current usage deviates from the expected current usage by more than a threshold, a region of the memory structure is suspected as having a physical defect. For example, the selected word that is connected to the memory cells that were programmed may be suspected as having a physical defect. If a region is suspected as having a physical defect, a data integrity check may be performed in that region. If the data integrity check fails, the region may be marked as ineligible to store data.

Abstract: An illustrative embodiment of this disclosure is an apparatus, including a memory, a processor in communication with the memory, and a decoder. The processor is configured to train a classifier, calculate one or more features of a codeword, predict an outcome of decoding the codeword with the decoder, and determine, using the classifier, whether the outcome satisfies a predetermined threshold. In some embodiments, based on the outcome, the processor selects a set of decoder parameters to improve decoder performance.

Abstract: Technology for recovering data in memory dies is disclosed. A set of codewords may be stored across a set of memory dies. One of the memory dies stores redundancy information that is based on information from each codeword in the set of codewords. Each of the memory dies is bonded to control die through bond pads that allow communication between the control die and the memory die. If decoding of one of more codewords fails, the redundancy information may be used to recover data bits of all the codewords in the set. The redundancy information may be sent to a memory controller that is in communication with the control dies, which performs the data recovery.

Abstract: An open block management apparatus, system, and method for non-volatile memory devices is disclosed herein, providing improved performance for namespace-based host applications. The namespace identifier is applied to determine the open blocks to which to direct data from storage commands. One benefit of the disclosed technique is fewer de-fragmentation operations and more efficient memory garbage collection. Another benefit is the ability to secure private allocations of physical memory without needing to assign a partition or implement hardware isolation.

Abstract: Example systems and methods provide differentiated data recovery configurations based on memory health data. A distributed storage system, such as a cloud-based storage system, stores backup data from a remote storage device using a first data recovery configuration. Based on memory health data collected from the remote storage device, a change in a memory health state of the remote storage device may be determined. Responsive to the change in the memory health state, a different data recovery configuration may be used for storing backup data going forward and reallocating previously stored backup data in the distributed storage system.

Abstract: A black box device for a vehicle includes a data storage system for recording event data fed to the black box from various vehicle sensors. The data storage system includes a memory having memory cells and a controller in communication with the memory. The controller is configured to receive data and determine one or more memory cells as a destination for the data to be written. The controller is configured to determine a wear level of the memory cells and select a subset of program states of the memory cells based on the wear level; and program the memory cells using respective subsets of program states for each respective memory cell.

Abstract: Apparatuses, systems, and methods are presented for reading data. A controller may be configured to select a read mode from a plurality of read modes for reading data from a region of a non-volatile memory array. The plurality of read modes may include at least a time-based soft bit read mode. The controller may be configured to apply a set of bias conditions to cells of a region so that bit line currents associated with the cells of the region affect voltages at capacitors associated with the cells of the region. The controller may be configured to, in response to selecting a time-based soft bit read mode, read hard bits and soft bits for a region by sensing capacitor voltages resulting from an applied set of bias conditions, at multiple integration times.

Abstract: This disclosure relates to an apparatus including a zone manager to manage memory allocation and behavior under a Zoned Namespaces (ZNS) implementation. The zone manager may include a monitor circuit, an evaluation circuit, and a signaling circuit. The monitor circuit is configured to monitor a zone metric for each zone of a non-volatile storage device. The evaluation circuit is configured to determine health for each zone based on the zone metric. The signaling circuit is configured to notify a host of the zone health for one or more zones in response to the zone metric for the zone(s) satisfying an alert threshold.

Abstract: A storage system and sorting-based method for random read command prediction in a multi-queue system are provided. In one embodiment, a method for command prediction is performed in a storage system comprising a memory and being in communication with a host. The method comprises receiving a read command sequence from the host, wherein read commands in the read command sequence originate from a plurality of command queues in the host such that read commands in the read command sequence received from the host are out of order; sorting read commands in the read command sequence received from the host based on logical block addresses; and predicting a next read command from the sorted read commands. Other embodiments are provided.

Abstract: Apparatuses, systems, and methods are presented for reading data. A controller may be configured to select a read mode from a plurality of read modes for reading data from a region of a non-volatile memory array. The plurality of read modes may include at least a time-based soft bit read mode. The controller may be configured to apply a set of bias conditions to cells of a region so that bit line currents associated with the cells of the region affect voltages at capacitors associated with the cells of the region. The controller may be configured to, in response to selecting a time-based soft bit read mode, read hard bits and soft bits for a region by sensing capacitor voltages resulting from an applied set of bias conditions, at multiple integration times.

Abstract: A non-volatile storage apparatus comprises a non-volatile storage and a control circuit connected to the non-volatile storage. The non-volatile storage structure is organized into multiple partitions. Each partition is preassigned to a different data shaping level. Data to be stored in the non-volatile storage is shaped based on its entropy. The control circuit is configured to write shaped data to a partition of the multiple partitions that is preassigned to a same shaping level as the shaped data.

Abstract: A non-volatile storage device includes a compact and efficient filter of data samples for a monitored statistic about operation of the storage device. The non-volatile storage device comprises a plurality of non-volatile memory cells and a control circuit connected to the non-volatile memory cells. The control circuit is configured to maintain at the non-volatile storage device a sum of samples of the statistic for a moving window of the samples such that during operation new samples are added to the sum and contributions from old samples are removed from the sum by the control circuit multiplying the sum by a weight when adding the new samples.

Abstract: Systems and methods for pre-fetching data in a memory device are disclosed. The method may include receiving a current read command and determining whether the current read command is a random read command, for example based on a data chunk length identified by the current read command. The method may further include updating a prior read command data structure with the current read command, for random read commands; determining a predicted next read command from the prior read command data structure based on the current read command; and pre-fetching data associated with the predicted next read command. Functionality for prediction of next read commands, or pre-fetch of predicted next read commands, may be turned on or off based on resource availability or prediction success rate measurements.

Abstract: An illustrative embodiment of this disclosure is an apparatus, including a memory, a processor in communication with the memory, and a decoder. The processor is configured to train a classifier, calculate one or more features of a codeword, predict an outcome of decoding the codeword with the decoder, and determine, using the classifier, whether the outcome satisfies a predetermined threshold. In some embodiments, based on the outcome, the processor selects a set of decoder parameters to improve decoder performance.

Abstract: In a method for address table cache management, a first logical address associated with a first read command may be received. The first logical address may be associated with a first segment of an address mapping table. A second logical address associated with a second read command may then be received. The second logical address may be associated with a second segment of the address mapping table. A correlation metric associating the first segment to the second segment may be increased in response to receiving the first logical address before the second logical address. The first logical address and second logical address may each map to a physical address within the address mapping table, and a mapping table cache may be configured to store two or more segments. The mapping table cache may then be managed based on the correlation metric.

Abstract: Calibrating read reference voltages is disclosed. In an aspect, a control die calibrates read reference voltages for reading the non-volatile memory cells. The control die is bonded to a memory die that contains memory cells. In one aspect, a tiered approach to calibrating read reference voltages is taken. For example, first the control die may attempt to determine new values for read reference voltages. If the new read reference voltages are satisfactory, then the control die may use the new read reference voltages. The control die could use one or more different techniques to determine new read reference voltages. If the new read reference voltages determined by the control die are unsatisfactory, then a memory controller in communication with the control die may calibrate the read reference voltages. By the control die determining the new read reference voltages, the memory controller is substantially less burdened with such tasks.

Abstract: A method for punctured bit estimation includes receiving a punctured codeword. The method further includes generating a reconstructed codeword using the punctured codeword and at least one punctured bit having a default logic value. The method further includes generating a syndrome vector for the reconstructed codeword. The method further includes determining, using the syndrome vector, a number of unsatisfied parity-checks for the at least one punctured bit. The method further includes determining, for the at least one punctured bit, a bit value using, at least, the number of unsatisfied parity-checks associated with the at least one punctured bit.