Patents by Inventor Eric H. Lenz

Eric H. Lenz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220298624
    Abstract: Substantially carbon-free molybdenum-containing and tungsten-containing films are deposited on semiconductor substrates using halide-free metalorganic precursors. The precursors do not include metal-carbon bonds, carbonyl ligands, and, preferably do not include beta-hydrogen atoms. Metal-containing films, such as molybdenum nitride, molybdenum oxynitride, molybdenum silicide, and molybdenum boride with carbon content of less than about 5% atomic, such as less than about 3% atomic are deposited. The films are deposited in some embodiments by reacting the metal-containing precursor with a reactant on a surface of a substrate in an absence of plasma, e.g. using several ALD cycles. In some embodiments the formed film is then treated with a second reactant in a plasma to modify its properties (e.g., to densify the film, to reduce resistivity of the film, or to increase its work function). The films can be used as liners, diffusion barriers, and as electrode material in pMOS devices.
    Type: Application
    Filed: August 10, 2020
    Publication date: September 22, 2022
    Inventors: Kyle Jordan Blakeney, Chiukin Steven Lai, Thomas M. Pratt, Eric H. Lenz, Jason Stevens
  • Publication number: 20220290300
    Abstract: Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.
    Type: Application
    Filed: August 19, 2020
    Publication date: September 15, 2022
    Inventors: Ravi Vellanki, Eric H. Lenz, Vinayakaraddy Gulabal, Sanjay Gopinath, Michal Danek, Prodyut Majumder, Novy Tjokro, Yen-Chang Chen, Shruti Vivek Thombare, Gorun Butail, Patrick A. van Cleemput
  • Publication number: 20210375591
    Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.
    Type: Application
    Filed: April 19, 2019
    Publication date: December 2, 2021
    Inventors: Anand Chandrashekar, Eric H. Lenz, Leonard Wai Fung Kho, Jeffrey Charles Clevenger, In Su Ha
  • Patent number: 10186448
    Abstract: An apparatus for semiconductor processing that includes a pedestal that includes a wafer support surface that includes a plurality of mesas and a pattern of grooves is provided. Each mesa may be bracketed between two or more grooves, each mesa may include a plurality of mesa side walls that intersect, at least in part, with one of the grooves and with a mesa top surface that is a substantially planar surface, the mesa top surfaces may be substantially coplanar with each other, and the mesa top surfaces may be configured to support a wafer during semiconductor operations.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: January 22, 2019
    Assignee: Lam Research Corporation
    Inventors: Peter Krotov, Eric H. Lenz
  • Patent number: 10087523
    Abstract: A vaporizer system is provided that allows for rapid shifts in the flow rate of a vaporized reactant while maintaining a constant overall flow rate of vaporized reactant and carrier gas.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: October 2, 2018
    Assignee: Lam Research Corporation
    Inventors: Joshua Collins, Eric H. Lenz, Michal Danek
  • Patent number: 9951423
    Abstract: A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: April 24, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Eric H. Lenz
  • Publication number: 20170342562
    Abstract: Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include an optical beam port to allow an optical beam to transit through the vapor and allow measurement of the vapor concentration in the reservoir. In some implementations, the reservoir may be integrated with a vacuum pumping manifold and the reservoir and manifold may be heated by a common heating system to prevent condensation of the vapor.
    Type: Application
    Filed: May 31, 2016
    Publication date: November 30, 2017
    Inventors: Gary Bridger Lind, Panya Wongsenakhum, Eric H. Lenz, Joshua Collins
  • Publication number: 20170335450
    Abstract: A vaporizer system is provided that allows for rapid shifts in the flow rate of a vaporized reactant while maintaining a constant overall flow rate of vaporized reactant and carrier gas.
    Type: Application
    Filed: May 15, 2017
    Publication date: November 23, 2017
    Inventors: Joshua Collins, Eric H. Lenz, Michal Danek
  • Publication number: 20170170051
    Abstract: An apparatus for semiconductor processing that includes a pedestal that includes a wafer support surface that includes a plurality of mesas and a pattern of grooves is provided. Each mesa may be bracketed between two or more grooves, each mesa may include a plurality of mesa side walls that intersect, at least in part, with one of the grooves and with a mesa top surface that is a substantially planar surface, the mesa top surfaces may be substantially coplanar with each other, and the mesa top surfaces may be configured to support a wafer during semiconductor operations.
    Type: Application
    Filed: May 13, 2016
    Publication date: June 15, 2017
    Inventors: Peter Krotov, Eric H. Lenz
  • Publication number: 20160343595
    Abstract: An apparatus for semiconductor manufacturing is provided. The apparatus may include a gas distribution manifold. The gas distribution manifold may include a faceplate assembly having a backplate region, a faceplate region opposite the backplate region, and a first pattern of gas distribution holes. The gas distribution manifold may also include a temperature control assembly in thermally conductive contact with the face plate assembly. The temperature control assembly may include a cooling plate assembly, a heating plate assembly offset from the cooling plate assembly to form a gap, and a plurality of thermal chokes distributed within the gap.
    Type: Application
    Filed: May 19, 2015
    Publication date: November 24, 2016
    Inventors: Gary Bridger Lind, Panya Wongsenakhum, Eric H. Lenz
  • Patent number: 9321000
    Abstract: A method of providing airflow management in a substrate production tool includes providing a first mechanism coupling the substrate production tool to a fan filter unit. The fan filter unit provides filtered air to the substrate production tool. A second mechanism couples the substrate production tool to a reduced pressure exhaust mechanism. The reduced pressure exhaust mechanism provides an exhaust for excess gas flow within the substrate production tool. A substrate process area of the substrate production tool is maintained at a lower pressure than a pressure of a substrate transfer section of the substrate production tool. The substrate process area maintains a higher pressure than a pressure of the reduced pressure exhaust mechanism. The substrate transfer section maintains a higher pressure than the pressure of the reduced pressure exhaust mechanism.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: April 26, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Eric H. Lenz
  • Publication number: 20160097127
    Abstract: A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventor: Eric H. Lenz
  • Patent number: 9234775
    Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: January 12, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dean J. Larson, Robert C. Hefty, James V. Tietz, William S. Kennedy, Eric H. Lenz, William M. Denty, Jr., Enrico Magni
  • Patent number: 9117870
    Abstract: A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: August 25, 2015
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Publication number: 20150040757
    Abstract: A method of providing airflow management in a substrate production tool includes providing a first mechanism coupling the substrate production tool to a fan filter unit. The fan filter unit provides filtered air to the substrate production tool. A second mechanism couples the substrate production tool to a reduced pressure exhaust mechanism. The reduced pressure exhaust mechanism provides an exhaust for excess gas flow within the substrate production tool. A substrate process area of the substrate production tool is maintained at a lower pressure than a pressure of a substrate transfer section of the substrate production tool. The substrate process area maintains a higher pressure than a pressure of the reduced pressure exhaust mechanism. The substrate transfer section maintains a higher pressure than the pressure of the reduced pressure exhaust mechanism.
    Type: Application
    Filed: October 27, 2014
    Publication date: February 12, 2015
    Inventor: Eric H. Lenz
  • Patent number: 8893642
    Abstract: In various exemplary embodiments described herein, a system and related method to provide airflow management system in a substrate production tool includes a housing to couple the substrate production tool to a fan filter unit to provide filtered air to the housing, a facility connection to couple the substrate production tool to a reduced pressure exhaust mechanism, a substrate transfer section coupled below the housing and in airflow communication with the facility connection, and a substrate process area coupled to the substrate transfer section by one or more substrate transfer slots. A chamber substantially containing the substrate transfer section and the substrate process area is coupled to the housing to receive the filtered air and to the facility connection to provide an exhaust for excess gas flow. The chamber maintains a low pressure in the substrate process area relative to the substrate transfer section.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: November 25, 2014
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 8703249
    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
    Type: Grant
    Filed: August 10, 2005
    Date of Patent: April 22, 2014
    Assignee: Lam Research Corporation
    Inventors: Jose Tong, Eric H. Lenz
  • Patent number: 8673785
    Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: March 18, 2014
    Assignee: Lam Research Corporation
    Inventors: Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa, Reza Sadjadi
  • Publication number: 20140033828
    Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.
    Type: Application
    Filed: October 3, 2013
    Publication date: February 6, 2014
    Applicant: Lam Research Corporation
    Inventors: Dean J. Larson, Robert C. Hefty, James V. Tietz, William S. Kennedy, Eric H. Lenz, William M. Denty, JR., Enrico Magni
  • Publication number: 20130342951
    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
    Type: Application
    Filed: August 10, 2005
    Publication date: December 26, 2013
    Inventors: Jose Tong, Eric H. Lenz