Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

Abstract: The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter pin during lifting. The perimeter pin is configured to overcome a holding force at an interface of the substrate and the surface. Generally, the holding force is generated between the substrate and the surface during the processing step. The apparatus further includes a center pin for moving the substrate from the first position to a second position wherein the substrate is disposed on the center pin during moving. The second position is further away from the surface of the chuck than the first position.

Abstract: The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter pin during lifting. The perimeter pin is configured to overcome a holding force at an interface of the substrate and the surface. Generally, the holding force is generated between the substrate and the surface during the processing step. The apparatus further includes a center pin for moving the substrate from the first position to a second position wherein the substrate is disposed on the center pin during moving. The second position is further away from the surface of the chuck than the first position.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

Abstract: The invention relates to a fluid connector for sealing an interface between first and second fluid passages in a plasma processing apparatus. The fluid connector includes a first end member having a first geometry. The first geometry is arranged to substantially seal a first mating region of the first fluid passage. The fluid connector further includes a second end member having a second geometry. The second geometry is arranged to substantially seal a second mating region of the second fluid passage and the second geometry is configured differently than the first geometry. The fluid connector additionally includes an opening that extends through the first end member and the second end member through which a fluid may pass for use by the semiconductor processing apparatus so as to fluidly couple the first fluid passage to the second fluid passage.

Abstract: The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter pin during lifting. The perimeter pin is configured to overcome a holding force at an interface of the substrate and the surface. Generally, the holding force is generated between the substrate and the surface during the processing step. The apparatus further includes a center pin for moving the substrate from the first position to a second position wherein the substrate is disposed on the center pin during moving. The second position is further away from the surface of the chuck than the first position.

Abstract: A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier.

Abstract: A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier.

Abstract: A cam-based arrangement configured to move a confinement ring along a first axis of a plasma processing chamber. The confinement ring is disposed in a plane that is orthogonal to the first axis. The cam-based arrangement includes a cam ring having a plurality of cam regions formed on a first surface of the cam ring. There is further included a plurality of cam followers in rolling contact with the first surface of the cam ring. There is also included a plurality of plungers oriented parallel to the first axis, each of the plurality of plungers being coupled to one of the plurality of cam followers and to the confinement ring, wherein the plurality of plungers move in an orchestrated manner parallel to the first axis as the cam ring is rotated and the plurality of cam followers stay in the rolling contact with the first surface of the cam ring.

Abstract: A focus ring assembly configured to substantially encircle a chuck of a plasma processing chamber. The focus ring assembly includes an annular dielectric body; and an electrically conductive shield surrounding the annular dielectric body. The electrically conductive shield is configured to be electrically grounded within the plasma processing chamber and includes a tube-shaped portion being disposed outside of the annular dielectric body and surrounding at least part of the annular dielectric body. The electrically conductive shield further includes an inwardly-protruding flange portion being in electrical contact with the tube-shaped portion. The flange portion forms a plane that intersects the tube-shaped portion. The flange portion is embedded within the annular dielectric body.

Abstract: A control circuit configured to control a reference voltage of a reference node of an electrostatic chuck power supply is disclosed. The electrostatic chuck power supply is configured to clamp a substrate to a bipolar electrostatic chuck. The electrostatic chuck has a first buried conductor and a second buried conductor. The electrostatic chuck power supply has a first output configured for being coupled with the first buried plate. The first output has a first output voltage referenced to the reference voltage of the reference node. The electrostatic chuck power supply also has a second output configured for being coupled with the second buried plate. The first output has a first output voltage referenced to the reference voltage of the reference node.

Abstract: Apparatus and method for obtaining improved control of the temperature of a semiconductor wafer over its area during plasma processing including reactive ion etching (RIE) and similar processing. RIE reactor apparatus is provided with a novel chuck arrangement both for holding and for controlling the temperature of a wafer during processing. A top face of a chuck (either mechanical or electrostatic), against which the wafer is held, is configured into a plurality of zones into which zone coolant gas, such as helium, is admitted. The zone coolant gas passes through narrow channels between the top face of the chuck and the Underside of the wafer. Heat transfer from the wafer through the zone coolant gas and to the body of the chuck is controlled zone by zone by separately setting the pressure of zone coolant gas in each of the zones. By properly choosing pressures of zone coolant gas in the respective zones the temperature across the area from the center to the rim of both small and large diameter wafers (e.g.

Abstract: An electrode clamping assembly for a plasma reaction chamber wherein processing of a single wafer can be carried out. The electrode assembly includes a support member, an electrode such as a silicon showerhead electrode in the form of a disk having uniform thickness and a clamping ring which provides a resilient clamping force pressing against the showerhead electrode. The clamping member can be a ring of elastically deformable material and the clamping member can be tightened by a plurality of elastic spaced-apart bolts such that the clamping member is compressed and provides the resilient clamping force throughout temperature cycling of the electrode assembly during wafer processing. Heat conduction between the showerhead electrode and the support member can be improved by supplying pressurized process gas to a gap therebetween. The clamping member also provides plasma confinement in an area between the electrode and the wafer being processed.

Abstract: A wafer clamping member for clamping a wafer in a plasma reaction chamber. The clamping member has a design which minimizes particle contamination of the wafer and allows more wafers to be processed before it is necessary to clean built-up deposits from the clamping member. The clamping member includes a clamping portion which clamps an outer periphery of the wafer against a bottom electrode and a shadow portion which provides a gap between an inner edge of the clamping member and the upper surface of the wafer. The gap is open to the interior of the plasma reaction chamber and preferably has a height equal to about a mean free path of a gas activated to form a plasma in the plasma reaction chamber.

Abstract: Plasma etching apparatus includes a stack of quartz rings that are spaced apart to form slots therebetween and that are positioned to surround an interaction space between two electrodes of the apparatus where a plasma is formed during operation of the apparatus. The dimensions of the slots are chosen to insure that charged particles of spent gases in the plasma exiting the interaction space are neutralized by wall collisions as they exit the slots. Two voltage sources of different frequencies are used to apply voltages to the electrodes in a fashion that isolates each source from the other.

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon.

Abstract: An electrode assembly for a plasma reactor, such as a plasma etch or plasma-enhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof. The electrode plate is composed of a substantially pure material which is compatible with a particular reaction being performed in the reactor, while the support frame is composed of a material having desirable thermal, electrical, and structural characteristics. The support frame is bonded to the electrode plate using a bonding layer, usually a ductile metallic bonding layer, which provides effective thermal and electrical coupling while permitting a degree of thermal expansion mismatch between the support frame and the electrode plate.