Abstract: In a memory module having a designated group of memory cells assigned to represent a logical portion of the memory structure, a memory redundancy circuit having a redundant group of memory cells; and a redundancy controller coupled with the designated group and the redundant group. The redundancy controller, which can include a redundancy decoder, assigns the redundant group to the logical portion of the memory structure in response to a preselected memory group condition, e.g., a “FAILED” memory group condition. The redundancy controller also can include selectable switches, for example, fuses, which can encode the preselected memory group condition. The designated group of memory cells and the redundant group of memory cells can be a memory row, a memory column, a preselected portion of a memory module, a selectable portion of a memory module, a memory module, or a combination thereof.

Abstract: The present invention relates to a synchronous self timed memory device. The device includes a plurality of memory cells forming a cell array, at least one local decoder interfacing with the cell array, at least one local sense amplifier and at least one local controller. The local sense amplifier interfaces with at least the decoder and cell array, and is adapted to precharge and equalize at least one line coupled thereto. The local controller interfaces with and coordinates the activities of at least the local decoder and sense amplifier.

Abstract: An SRAM cell eliminates the p-channel pull-up resistors to decrease its physical size. A tracking circuit generates a control signal used to ensure that the memory state is preserved during the idle state. The control signal controls the wordline voltage during the idle state to vary the leakage through the access transistors to ensure that current into the node through the access device is not exceeded by leakage current out of the output nodes through the storage devices. The tracking circuit control signal can also be used to vary the well to substrate bias voltage of the storage devices to decrease the leakage through the storage devices. The control signal can also be used to bias the supply rail voltage to which the storage devices are directly coupled to decrease the amount of leakage through the storage devices.

Abstract: A decoder providing asynchronous reset, redundancy, or both an asynchronously-resettable decoder with redundancy. The decoder has a synchronous portion, responsive to a clocked signal; an asynchronous portion coupled with an asynchronous circuit; a feedback-resetting portion, which substantially isolates the synchronous portion from the asynchronous portion coupled with, and interposed between the synchronous portion in response to a asynchronous reset signal; a signal input; a first memory output coupled with a first memory cell group; a second memory output coupled with a second memory cell group; and a selector coupled between the signal input, the first memory output, and the second memory output. This decoder can be memory row-oriented, and thus provide an asynchronously-resettable row decoder with row redundancy, or an asynchronously-resettable column decoder with column redundancy.

Abstract: Aspects of the invention may include a software programmable verification tool for testing and debugging an embedded device under test by generating an instruction for causing at least one predetermined test to be executed by a BIST module on the embedded device under test. The generated instruction may be loaded into a parameterized shift register of the BIST module. An identity of at least one predetermined test may be determined based on the loaded instruction. At least one signal corresponding to the determined identity of the at least one predetermined test may be generated for causing control and execution of the testing and debugging of the device under test.

Abstract: Aspects of the invention for testing and debugging an embedded device under test may include the step of loading an instruction into a parameterized shift register of a BIST module coupled to each one of a plurality of embedded memory modules comprising the embedded device under test. An identity of the loaded instruction may be determined subsequent to loading the instruction into the parameterized shift register. A plurality of test signals may be generated which correspond to the determined identity of the loaded instruction. In this regard, each of the generated plurality of test signals may control the execution of the testing and debugging of a corresponding one of each of the plurality of embedded memory modules that make up the embedded device under test.

Abstract: Aspects of the invention may include testing and debugging an embedded device under test. Testing and debugging and embedded device under test may include the step of loading an instruction into a parameterized shift register of each one of a plurality of BIST modules coupled to an individual one of a plurality of embedded memory modules comprising the embedded device under test. An identity of each of the instruction loaded into the parameterized shift register of each one of the plurality of BIST modules may subsequently be determined. A separate test signal may be generated from each one of the plurality of BIST modules corresponding to the determined identity of the instruction loaded in each one of the plurality of BIST modules, each one of the generated test signals causing control and execution of the testing and debugging of a corresponding one of each of the plurality of embedded memory modules comprising the embedded device under test.

Abstract: The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i.e., replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one active predecoder adapted to be shifted out of use; and at least one redundant predecoder adapted to be shifted in to use.

Abstract: A limited swing driver with a pass transistor coupled between a memory cell and an associated bitline; an inverter, its output coupled to the gate of the pass transistor, and its input coupled with the memory cell. A memory node is formed at the juncture of the inverter input and the memory cell forming a memory node. The driver also includes a discharge transistor coupled between the memory node and ground. The discharge transistor is driven by an input on the discharge transistor gate. It is preferred that the discharge transistor being programmed to produce a limited swing voltage at the memory node. It is desirable that the limited swing voltage be less than about 350 mV, and it is preferable that the limited swing voltage be between about 300 mV and about 200 mV.

Abstract: A sense amplifier having a sampling circuit to sample the amplifier input signal; a reference node storing a reference signal corresponding to the input signal; and a timing circuit activating the sampling circuit for a predetermined interval, and admitting the reference signal to the reference node. The sense amplifier also can include a pump capacitor substantially maintaining a value of the reference signal; and a gain circuit coupled with the reference node and disposed to adaptively adjust gain of an output signal produced by the sense amplifier. The sense amplifier can be a single-ended sense amplifier.

Abstract: A high speed low power data transfer bus circuit that reduces bus power consumption by imposing a limited, controlled voltage swing on the associated data bus. In one embodiment, an inverter is coupled with a pMOS pass transistor and an nMOS discharge transistor, and the combination is coupled with a data bus. The discharge transistor and pass transistor can be programmed to provide a preselected bus operational characteristics. In another embodiment, multiple nMOS discharge transistors can be coupled to the data bus via the pass transistor, with each of the discharge transistors being selectively programmed to provide additional preselected bus operational characteristics, multiple, programmable discharge transistors, thus selectably imposing encoded and multilevel logic signals on the data bus. In another embodiment, a bidirectional data transfer bus circuit couples two data busses while imposing a limited, controlled voltage swing during the transfer.

Abstract: 1.

Abstract: A non-volatile memory cell (10) includes a charge-storing node (16). An electrically insulating first layer (76) is coupled between the node and a source of a first voltage (22). An electrically insulating second layer (66) is coupled between the node and a source of a second voltage (20-21). The area of the first layer is smaller than the area of the second layer. A controller (90) is arranged to cause the first voltage to be greater than the second voltage so that charge is extracted from the node and is arranged to cause the second voltage to be greater than the first voltage so that charge is injected into the node.

Abstract: A digital memory system (30) includes a memory cell (52), a bit line (50) and a charge integrity estimating module 35. The module is operative during a first mode of operation to detect whether a quantity of the charge stored in the memory cell lies within the first range of values or the second range of values, is operative during a second mode of operation to detect whether the quantity of the charge lies within a third range of values comprising a subset of the first range of values and is operative during a third mode of operation to detect whether the quantity of the charge lies within a fourth range of values comprising a subset of the second range of values.

Abstract: The present invention relates to a synchronous self timed memory device. The device includes a plurality of memory cells forming a cell array, at least one local decoder interfacing with the cell array, at least one local sense amplifier and at least one local controller. The local sense amplifier interfaces with at least the decoder and cell array, and is adapted to precharge and equalize at least one line coupled thereto. The local controller interfaces with and coordinates the activities of at least the local decoder and sense amplifier.

Abstract: The present invention relates to a system and method adapted to increase memory cell and memory architecture design yield. The present invention includes memory architecture having a decoder and a multi-bank memory. The decoder is adapted to decode addresses. The multi-bank memory interacts with the decoder, wherein the multi-bank memory includes at least one output data bit adapted to complete a word for a failing bank in the multi-bank memory.

Abstract: The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The system includes a hierarchical memory structure, including a predecoder adapted to perform a first layer of address predecoding and at least one local predecoder interacting with the global predecoder and adapted to perform a second layer of address predecoding.

Abstract: The present invention relates to a synchronous self timed memory device. The device includes a plurality of memory cells forming a cell array, at least one local decoder interfacing with the cell array, at least one local sense amplifier and at least one local controller. The local sense amplifier interfaces with at least the decoder and cell array, and is adapted to precharge and equalize at least one line coupled thereto. The local controller interfaces with and coordinates the activities of at least the local decoder and sense amplifier.

Abstract: The present invention relates to a system and method for equalizing the capacitance between at least two lines of a bus running in parallel for a portion of their length. The system and method include determining a twisting pattern for the lines using an algorithm. After determining the twisting pattern, the lines are twisted according to the pattern so that each of the lines runs along every other line for a same distance across the length of the bus.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.