Abstract: A system includes a memory block and a controller. The controller is adapted to skew a pre-charge signal for a bit line of the memory block. The controller can skew the pre-charge signal during a read operation or a write operation. The system can also include a sense amplifier in communication with a bit line of the memory block, and the sense amplifier can automatically shut off after indicating a sensed data state for the bit line. The controller may be a global controller or a local controller.

Abstract: Read and write operations of a non-volatile memory (NVM) bitcell have different optimum parameters resulting in a conflict during design of the NVM bitcell. A single bitline in the NVM bitcell prevents optimum read performance. Read performance may be improved by splitting the read path and the write path in a NVM bitcell between two bitlines. A read bitline of the NVM bitcell has a low capacitance for improved read operation speed and decreased power consumption. A write bitline of the NVM bitcell has a low resistance to handle large currents present during write operations. A memory element of the NVM bitcell may be a fuse, anti-fuse, eFUSE, or magnetic tunnel junction. Read performance may be further enhanced with differential sensing read operations.

Abstract: Power-on-reset (POR) circuits for resetting memory devices, and related circuits, systems, and methods are disclosed. In one embodiment, a POR circuit is provided. The POR circuit is configured to receive as input, a plurality of decoded address outputs from at least one memory decoding device. The POR circuit is further configured to generate a POR reset if any of the plurality of decoded address outputs are active. As a result, memory decoding device latches can be reset to a known, default condition to avoid causing an unintentional word line selection in the memory during power-on state before an external reset is available. Because the POR circuit can generate the POR reset without need of an external reset, the memory decoding devices can be reset quickly to allow for quicker availability of memory after a power-on condition.

Abstract: A decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true.

Abstract: In a particular embodiment, an apparatus includes a one-time programmable (OTP) memory circuit configured to be responsive to a programming voltage. The OTP memory circuit includes an OTP memory array including OTP memory cells, a first power switch configured to decouple the OTP memory array from the programming voltage, and a second power switch configured to decouple a subset of the OTP memory cells from the programming voltage.

Abstract: In a particular embodiment, an apparatus includes a one-time programmable (OTP) memory circuit configured to be responsive to a programming voltage. The OTP memory circuit includes an OTP memory array including OTP memory cells, a first power switch configured to decouple the OTP memory array from the programming voltage, and a second power switch configured to decouple a subset of the OTP memory cells from the programming voltage.

Abstract: A low power interconnect allows client to client communication using an XBAR architecture. An XBAR compiler generates chip designs with XBAR data paths structured to reduce energy consumption and delay. Repeaters inserted into XBAR data paths reduce resistance capacitance (RC) delays so that a design can support desired frequency specifications along a path. Dynamic power consumption is reduced by inserting latch repeaters in the XBAR track. The latch repeaters each include a transmission gate and a latch. Select circuitry couples selected clients to a path. Enable circuitry opens the transmission gates located on the path between the selected clients. Latch repeaters that are not enabled on a given communication cycle gate off the unused portions of the path and maintain the data that was latched on a previous cycle.

Abstract: Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods are disclosed. In one embodiment, the memory pre-decoder circuit includes a memory pre-decoder configured to pre-decode a memory address input within a memory pre-decode setup path to generate a pre-decoded memory address input. Additionally, a pulse latch is provided in the memory pre-decoder circuit outside of the memory pre-decode setup path. The pulse latch samples the pre-decoded memory address input based on a clock signal and generates a pre-decoded memory address output. As such, the memory pre-decode setup path sets up the pre-decoded memory address input prior to the clock signal for the pulse latch. In this manner, the pulse latch is configured to generate a pre-decoded memory address output without increasing setup times in the memory pre-decode setup path.

Abstract: Power-on-reset (POR) circuits for resetting memory devices, and related circuits, systems, and methods are disclosed. In one embodiment, a POR circuit is provided. The POR circuit is configured to receive as input, a plurality of decoded address outputs from at least one memory decoding device. The POR circuit is further configured to generate a POR reset if any of the plurality of decoded address outputs are active. As a result, memory decoding device latches can be reset to a known, default condition to avoid causing an unintentional word line selection in the memory during power-on state before an external reset is available. Because the POR circuit can generate the POR reset without need of an external reset, the memory decoding devices can be reset quickly to allow for quicker availability of memory after a power-on condition.

Abstract: A circuit includes a plurality of capacitors responsive to a plurality of latches that store a test code. A first bit line is coupled to a bit cell and coupled to a sense amplifier. A second bit line is coupled to the bit cell and coupled to the sense amplifier. A differential charge from a set of the plurality of capacitors is applied to the first bit line and to the second bit line. The set of the plurality of capacitors is determined based on the test code and the test code is independent of an output of the sense amplifier.

Abstract: A memory includes at least first and second banks of single-port memory elements, a first local controller adapted to send read and write instructions to the first memory bank, and a second local controller adapted to send read and write instructions to the second memory bank. A global controller is configured to receive first and second memory addresses and a first indication of an operation to be performed at the first memory addresses and a second indication of an operation to be performed at the second memory address and to instruct the first local controller to perform the first indicated operation at the first memory address and to instruct the second local controller to perform the second indicated operation at the second memory address at the same time.

Abstract: A circuit includes a plurality of capacitors responsive to a plurality of latches that store a test code. A first bit line is coupled to a bit cell and coupled to a sense amplifier. A second bit line is coupled to the bit cell and coupled to the sense amplifier. A differential charge from a set of the plurality of capacitors is applied to the first bit line and to the second bit line. The set of the plurality of capacitors is determined based on the test code and the test code is independent of an output of the sense amplifier.

Abstract: The present invention relates to a system and method for adjusting timing of memory access operations to a memory block. In one embodiment, a controller may be in communication with a memory block. The controller may be adapted to adjust timing of a memory access operation to the memory block by extending a portion of a clock pulse to compensate for delay associated with the memory block. The delay may correspond to a predecoder delay or a global decoder delay. The clock pulse may be a read clock pulse or a write clock pulse. In one embodiment, the controller may be adapted to adjust timing of a read clock pulse differently from a write clock pulse.

Abstract: The present invention includes operational amplifier for an active pixel sensor that detects optical energy and generates an analog output that is proportional to the optical energy. The active pixel sensor operates in a number of different modes including: signal integration mode, the reset integration mode, column reset mode, and column signal readout mode. Each mode causes the operational amplifier to see a different output load. Accordingly, the operational amplifier includes a variable feedback circuit to provide compensation that provides sufficient amplifier stability for each operating mode of the active pixel sensor. For instance, the operational amplifier includes a bank of feedback capacitors, one or more of which are selected based on the operating mode to provide sufficient phase margin for stability, but also considering gain and bandwidth requirements of the operating mode.

Abstract: Read and write operations of a non-volatile memory (NVM) bitcell have different optimum parameters resulting in a conflict during design of the NVM bitcell. A single bitline in the NVM bitcell prevents optimum read performance. Read performance may be improved by splitting the read path and the write path in a NVM bitcell between two bitlines. A read bitline of the NVM bitcell has a low capacitance for improved read operation speed and decreased power consumption. A write bitline of the NVM bitcell has a low resistance to handle large currents present during write operations. A memory element of the NVM bitcell may be a fuse, anti-fuse, eFUSE, or magnetic tunnel junction. Read performance may be further enhanced with differential sensing read operations.

Abstract: A decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true.

Abstract: The present invention relates to a system and method for adjusting timing of memory access operations to a memory block. In one embodiment, a controller may be in communication with a memory block. The controller may be adapted to adjust timing of a memory access operation to the memory block by extending a portion of a clock pulse to compensate for delay associated with the memory block. The delay may correspond to a predecoder delay or a global decoder delay. The clock pulse may be a read clock pulse or a write clock pulse.

Abstract: A sense amplifier having a sampling circuit to sample the amplifier input signal; a reference node storing a reference signal corresponding to the input signal; and a timing circuit activating the sampling circuit for a predetermined interval, and admitting the reference signal to the reference node. The sense amplifier also can include a pump capacitor substantially maintaining a value of the reference signal; and a gain circuit coupled with the reference node and disposed to adaptively adjust gain of an output signal produced by the sense amplifier. The sense amplifier can be a single-ended sense amplifier.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: The present invention includes operational amplifier for an active pixel sensor that detects optical energy and generates an analog output that is proportional to the optical energy. The active pixel sensor operates in a number of different modes including: signal integration mode, the reset integration mode, column reset mode, and column signal readout mode. Each mode causes the operational amplifier to see a different output load. Accordingly, the operational amplifier includes a variable feedback circuit to provide compensation that provides sufficient amplifier stability for each operating mode of the active pixel sensor. For instance, the operational amplifier includes a bank of feedback capacitors, one or more of which are selected based on the operating mode to provide sufficient phase margin for stability, but also considering gain and bandwidth requirements of the operating mode.