Patents by Inventor Eun-Ji Kim

Eun-Ji Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250114286
    Abstract: The present invention relates to a method for stabilizing ceramide and to a cosmetic composition containing stabilized ceramide and, more specifically, to a method for homogenizing and stabilizing ceramide by self-assembling the ceramide together with ?-sitosterol, resveratrol, and allantoin which are other physiologically active substances using a microfluidic chip and a high pressure homogenizer, and to a technique for using ceramide and nanoparticles containing ?-sitosterol, resveratrol, and allantoin, which are produced by means of the stabilizing method, as a cosmetic material for skin moisturizing, anti-oxidation, skin inflammation relief, skin barrier enhancement, and skin itching relief.
    Type: Application
    Filed: October 10, 2024
    Publication date: April 10, 2025
    Inventors: Hang Eui CHO, Jae Yong SEO, Eun Ji KIM, Hwi Yeob KIM, Ji Soo RYU, Jong Won JEON, Jung Soo KIM, Eun Jeong YOON, Min Ha KIM, Jin Hong KIM, So Hyeon BAE, Si Jun PARK, Hyun Sang LEE
  • Publication number: 20250038434
    Abstract: The present invention relates to a ground rod that is electrically connected to the ground and serves as a terminal, and more particularly, to a ground rod that allows for the smooth passage of a ground wire while being easily and conveniently buried in the ground without being hit. The ground rod according to the present invention includes: a rod body configured such that a head portion is formed at the top thereof and a sharp portion is formed at the bottom thereof; a bending connector formed as a pipe that is bent in an inverted and reversed L shape and has both ends open to allow a ground wire to pass therethrough, and welded horizontally to the side of the rod body; and fixing means configured to fix the ground wire having passed through the inside of the bending connector to the bending connector.
    Type: Application
    Filed: January 4, 2024
    Publication date: January 30, 2025
    Inventors: Kwang Soo KIM, Eun Ji KIM
  • Patent number: 12198856
    Abstract: The electronic component includes: a capacitor body; first and second external electrodes on a mounting surface of the capacitor body; first and second connection terminals respectively connected to the first and second external electrodes; a first bonding portion between the first external electrode and the first connection terminal, and including a first-2-th region and a first-1-th region, the first-2-th region being adjacent to a center of the capacitor body and including a conductive resin, and the first-1-th region being adjacent to one end of the capacitor body and including a high melting point solder; and a second bonding portion between the second external electrode and the second connection terminal, and including a second-2-th region and a second-1-th region, the second-2-th region being adjacent to the center of the capacitor body and the second-1-th region being adjacent to the other end of the capacitor body.
    Type: Grant
    Filed: June 22, 2022
    Date of Patent: January 14, 2025
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Yeop Kim, Kyong Nam Hwang, Eun Ji Kim, Do Hyun An
  • Publication number: 20240372102
    Abstract: There is provided a binder for a secondary battery anode, in which double-bond functional groups are selectively formed in a fluorine-based polymer by using an organic catalyst, and a cross-linked structure can be formed by the double bonds through only an electrode drying process without the introduction of a heterogeneous additive.
    Type: Application
    Filed: August 23, 2022
    Publication date: November 7, 2024
    Applicants: PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Jin Hong LEE, Seung Geol LEE, Kie Yong CHO, In Hye CHOI, Eun Ji KIM, Hyeok Jun SEO, Yong Hun LEE, Ho Jin JUNG, Young Je KWON, Jae Won PARK, Seon Gyeong KANG
  • Publication number: 20240371457
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Application
    Filed: July 18, 2024
    Publication date: November 7, 2024
    Inventors: EUN-JI KIM, JUNG-JUNE PARK, JEONG-DON IHM, BYUNG-HOON JEONG, YOUNG-DON CHOI
  • Patent number: 12128544
    Abstract: An embodiment device for controlling a service robot includes a communication device configured to communicate with the service robot and a controller configured to detect a present situation of the service robot by using various pieces of sensor information acquired from the service robot, determine a task appropriate to the present situation of the service robot, wherein the task includes one or more behaviors, and control the service robot based on an action set for each of the one or more behaviors of the task.
    Type: Grant
    Filed: June 23, 2022
    Date of Patent: October 29, 2024
    Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION
    Inventors: Sang Hyun Hwang, Il Yong Yoon, Eun Ji Kim, Si Hyun Joo, Gil Jin Yang
  • Publication number: 20240287052
    Abstract: Provided are an oxazole derivative, a preparation method therefor, and a pharmaceutical composition comprising the same as an active ingredient for preventing or treating an allergic disease such as asthma or atopy, where the oxazole derivative exhibits an excellent inhibitory effect on the intracellular signaling of IL-33 and thus can be advantageously used as an active ingredient in a pharmaceutical composition for prevention or treatment of an allergic disease such as asthma or atopy.
    Type: Application
    Filed: May 31, 2022
    Publication date: August 29, 2024
    Applicant: AZCURIS CO., LTD.
    Inventors: Young Joo BYUN, Young Ho JEON, Geon Hee JANG, Tae Hyeong LIM, Sang Hyun SON, Eun Ji KIM, Ho Soon KIM
  • Patent number: 12073898
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: August 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Ji Kim, Jung-June Park, Jeong-Don Ihm, Byung-Hoon Jeong, Young-Don Choi
  • Patent number: 12056173
    Abstract: An information management apparatus may include a storage device that separately stores ontology information of an intelligent robot that provides a service and includes a plurality of repositories each having meta information. A storage management device sorts and stores ontology information of the intelligent robot in the plurality of repositories based on a prefix of the ontology information of the intelligent robot and the meta information.
    Type: Grant
    Filed: November 8, 2021
    Date of Patent: August 6, 2024
    Assignees: Hyundai Motor Company, Kia Corporation, University of Seoul Industry Cooperation Foundation
    Inventors: Sang Hyun Hwang, Eun Ji Kim, Jae Ho Lee, Byung Gi Choi
  • Publication number: 20240209342
    Abstract: The present application relates to a glutamine-hydrolyzing GMP synthase variant and a method for producing a purine nucleotide by using the same.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 27, 2024
    Inventors: Nara KWON, Ji Hyun LEE, Hyun-jung BAE, Dae Young KIM, Eun Ji KIM, Lan HUH, Hyeryun YOO, Bina KIM, Sung Kwang SON
  • Publication number: 20240084256
    Abstract: The present invention pertains to a method for culturing cord blood-derived natural killer cells using transformed T-cells. The method for culturing natural killer cells using transformed T-cells according to the present invention can effectively propagate and produce natural killer cells from a small amount of raw cells. In addition, the method can also improve the cell-killing ability of natural killer cells. Thus, the method for culturing natural killer cells using transformed T-cells according to the present invention can be usefully used to commercialize cell therapeutic agents. Moreover, natural killer cells produced by the culturing method of the present invention can be usefully used as a cell therapeutic agent.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 14, 2024
    Inventors: YUSUN KIM, EUN JI KIM, GYEONG-MIN PARK, BITNA YANG, BOKYUNG MIN, SUNGYOO CHO, YU KYEONG HWANG
  • Publication number: 20240089124
    Abstract: Disclosed herein are an apparatus and method for mutual authentication of quantum entities based on Measurement-Device-Independent Quantum Key Distribution (MDI-QKD). The method may include configuring a quantum input form based on an authentication key shared in advance with a counterpart entity, applying polarization modulation to the configured quantum input form, transmitting the quantum input form to which polarization modulation is applied to a quantum measurement device, and authenticating the counterpart entity by checking whether the counterpart entity configures a quantum input form according to the shared authentication key using a measurement result and information about polarization modulation.
    Type: Application
    Filed: March 24, 2023
    Publication date: March 14, 2024
    Inventors: Chang-Ho HONG, Se-Wan JI, O-Sung KWON, Youn-Chang JEONG, Eun-Ji KIM, Seok KIM, Haeng-Seok KO, Dae-Sung KWON, Jin-Gak JANG
  • Publication number: 20240021259
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Inventors: EUN-JI KIM, JUNG-JUNE PARK, JEONG-DON IHM, BYUNG-HOON JEONG, YOUNG-DON CHOI
  • Publication number: 20230365746
    Abstract: The present invention provides polyester and a method for preparing same, the polyester including a repeating unit derived from dihydroxyalkyl tetrahydrofuran obtained from biomass; and a repeating unit derived from short-branched aliphatic dicarboxylic acid. Thus, the polyester has a carbon reduction effect and may be utilized as a novel biomass polyethylene terephthalate (PET) for packaging, by having excellent transparency, impact resistance, flexibility and elastic modulus compared to conventional PET.
    Type: Application
    Filed: August 12, 2021
    Publication date: November 16, 2023
    Inventors: Da Kyoung YONG, Mee Hye JEONG, Jun Yeong kIM, Ji Min HA, Eun Ji Kim, Ki Hyun PARK
  • Publication number: 20230335520
    Abstract: Nonvolatile memory devices and methods of forming the same are provided. The devices may include an array region, an extension region, and a pad region and may include a substrate including a source plate. The devices may also include a mold structure that is on a front surface of the substrate and includes gate electrodes and mold insulating films alternately stacked in a stair shape in the extension region, a channel structure extending through the mold structure, a cell contact extending through the mold structure, a first insulator on the mold structure, a second insulator on a rear surface of the substrate, an pad on the second insulator, an contact extending through the first insulator, and a via formed by etching the second insulator and the substrate in the pad region. The source plate does not overlap the cell contact and the contact in a vertical direction.
    Type: Application
    Filed: January 4, 2023
    Publication date: October 19, 2023
    Inventors: EUN-JI KIM, Yoon Jo HWANG, Seo Jin PARK, Jun Seok BANG
  • Publication number: 20230298639
    Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.
    Type: Application
    Filed: May 25, 2023
    Publication date: September 21, 2023
    Inventors: EUN-JI KIM, JUNG-JUNE PARK, JEONG-DON IHM, BYUNG-HOON JEONG, YOUNG-DON CHOI
  • Publication number: 20230292521
    Abstract: A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit and a first bonding pad, the first bonding pad connected to the peripheral circuit, a cell structure on the peripheral circuit structure, the cell structure including a second bonding pad bonded to the first bonding pad, and a pad structure on the cell structure. The cell structure includes a cell substrate having a first face, a second face opposite to the first face, a first contact plug extending through the cell substrate and connected to an electrode layer, and a second contact plug extending through the cell substrate and connected to the cell substrate. Each of the first contact plug and the second contact plug is connected to the pad structure, and a bypass via is in contact with the pad structure on the second face.
    Type: Application
    Filed: January 12, 2023
    Publication date: September 14, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Woo Yong JEON, Eun-Ji Kim, Ji Young Kim, Moo Rym Choi
  • Patent number: 11742040
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Ji Kim, Jung-June Park, Jeong-Don Ihm, Byung-Hoon Jeong, Young-Don Choi
  • Patent number: 11736280
    Abstract: A quantum entity authentication apparatus and method. The quantum entity authentication apparatus includes a quantum state preparation unit for preparing an authentication quantum state that is generated based on an authentication key previously shared with an entity, a quantum channel verification unit for transmitting a quantum state, generated by performing an operation using a prestored unique operator on the authentication quantum state, to a quantum measurement device, and for verifying security of a quantum channel by using a result of Bell measurement and the authentication quantum state, the result of Bell measurement being revealed by the quantum measurement device for the quantum state, and a quantum entity authentication unit for, when the security of the quantum channel is verified, authenticating the entity using the result of the Bell measurement and the unique operator.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: August 22, 2023
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Changho Hong, Nayoung Kim, Osung Kwon, Younchang Jeong, Se Wan Ji, Eun Ji Kim, Seok Kim, Jingak Jang, Daesung Kwon
  • Patent number: D1015162
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: February 20, 2024
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Eun Ji Park, Hyuk Lyul Kwon, Eun Young Lee, Seung Ho Kim, Eun Ji Kim