Abstract: Nonvolatile memory devices and methods of forming the same are provided. The devices may include an array region, an extension region, and a pad region and may include a substrate including a source plate. The devices may also include a mold structure that is on a front surface of the substrate and includes gate electrodes and mold insulating films alternately stacked in a stair shape in the extension region, a channel structure extending through the mold structure, a cell contact extending through the mold structure, a first insulator on the mold structure, a second insulator on a rear surface of the substrate, an pad on the second insulator, an contact extending through the first insulator, and a via formed by etching the second insulator and the substrate in the pad region. The source plate does not overlap the cell contact and the contact in a vertical direction.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit and a first bonding pad, the first bonding pad connected to the peripheral circuit, a cell structure on the peripheral circuit structure, the cell structure including a second bonding pad bonded to the first bonding pad, and a pad structure on the cell structure. The cell structure includes a cell substrate having a first face, a second face opposite to the first face, a first contact plug extending through the cell substrate and connected to an electrode layer, and a second contact plug extending through the cell substrate and connected to the cell substrate. Each of the first contact plug and the second contact plug is connected to the pad structure, and a bypass via is in contact with the pad structure on the second face.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A quantum entity authentication apparatus and method. The quantum entity authentication apparatus includes a quantum state preparation unit for preparing an authentication quantum state that is generated based on an authentication key previously shared with an entity, a quantum channel verification unit for transmitting a quantum state, generated by performing an operation using a prestored unique operator on the authentication quantum state, to a quantum measurement device, and for verifying security of a quantum channel by using a result of Bell measurement and the authentication quantum state, the result of Bell measurement being revealed by the quantum measurement device for the quantum state, and a quantum entity authentication unit for, when the security of the quantum channel is verified, authenticating the entity using the result of the Bell measurement and the unique operator.

Abstract: The present invention provides a pharmaceutical composition for preventing or treating colitis comprising tegoprazan, which is a benzimidazole derivative compound, as an effective ingredient.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Abstract: An embodiment device for controlling a service robot includes a communication device configured to communicate with the service robot and a controller configured to detect a present situation of the service robot by using various pieces of sensor information acquired from the service robot, determine a task appropriate to the present situation of the service robot, wherein the task includes one or more behaviors, and control the service robot based on an action set for each of the one or more behaviors of the task.

Abstract: The present invention relates to a pharmaceutical composition for preventing peptic ulcer and/or recurrence thereof containing a benzimidazole derivative. The pharmaceutical composition of the present invention may effectively prevent peptic ulcer and/or recurrence thereof, which may be caused by administration of a non-steroidal anti-inflammatory drug, for a long period of time without side effects.

Abstract: An electronic component is disclosed. The electronic component includes: a capacitor body; first and second external electrodes on a mounting surface of the capacitor body; first and second connection terminals respectively connected to the first and second external electrodes; a first bonding portion between the first external electrode and the first connection terminal, and including a first-2-th region and a first-1-th region, the first-2-th region being adjacent to a center of the capacitor body and including a conductive resin, and the first-1-th region being adjacent to one end of the capacitor body and including a high melting point solder; and a second bonding portion between the second external electrode and the second connection terminal, and including a second-2-th region and a second-1-th region, the second-2-th region being adjacent to the center of the capacitor body and the second-1-th region being adjacent to the other end of the capacitor body.

Abstract: An information management apparatus may include a storage device that separately stores ontology information of an intelligent robot that provides a service and includes a plurality of repositories each having meta information. A storage management device sorts and stores ontology information of the intelligent robot in the plurality of repositories based on a prefix of the ontology information of the intelligent robot and the meta information.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A quantum key distribution (QKD) node apparatus and a QKD method therein. The QKD node apparatus may include a QKD module for generating quantum keys and quantum key IDs, a quantum key synchronization management module for storing the quantum keys and the quantum key IDs as outbound and inbound quantum keys in a distributed manner and sharing the outbound and inbound quantum keys with a second QKD node apparatus, and a quantum key orchestration module for delivering a master key and a master key ID to a secure application connected therewith in response to a request for the master key with the ID of a second secure application and delivering a packet including the master key encrypted with the outbound quantum key shared with the second QKD node apparatus, the master key ID, and a quantum key ID, to the second QKD node apparatus.

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating cancer comprising: as active ingredients, (1) an immune checkpoint inhibitor; (2) a biguanide-based compound or a pharmaceutically acceptable salt thereof; (3) 2-deoxy-D-glucose; or further comprising: (4) inositol hexaphosphate or a pharmaceutically acceptable salt thereof, inositol, or a mixture thereof. The compositions according to the present invention not only increase the indicants to various carcinomas for immune checkpoint inhibitors with limited indicants, but also exhibit a synergistic anti-cancer effect by appropriately combining specific drugs, thereby maximizing a therapeutic effect and killing only cancer cells without side effects. Therefore, the compositions of the present invention may be usefully used as anticancer agents for preventing or treating cancer.

Abstract: Provided is a method of producing a carbon fiber, the method including: a) adding an acrylonitrile-based polymer solution to a solution containing a glycol-based compound having a boiling point of 180 to 210° C. to precipitate an acrylonitrile-based polymer; b) melt spinning the acrylonitrile-based polymer to obtain a spun fiber; and c) performing stabilization and carbonization on the spun fiber to obtain a carbon fiber.