Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: The disclosure provided herewith relates to a Campylobacter jejuni CRISPR/CAS system-derived RGEN and a use thereof.

Abstract: The present invention relates to a zipper cord yarn and a reflective zipper wherein the zipper cord yarn containing a reflective yarn is sewn on a zipper by means of lock stitch, thereby enhancing the visibility of the zipper through retroreflective properties of the reflective yarn. The zipper cord yarn includes a core yarn, and a covering yarn made of a reflective yarn to cover the core yarn.

Abstract: Provided is a nonvolatile memory including a clock pin configured to receive an external clock signal during a duty correction circuit training period; a plurality of memory chips configured to perform a duty correction operation on an internal clock signal based on the external clock signal, the plurality of memory chips configured to perform the duty correction operation in parallel during the training period; and an input/output pin commonly connected to the plurality of memory chips, wherein each of the plurality of memory chips includes: a duty correction circuit (DCC) configured to perform the duty correction operation on the internal clock signal; and an output buffer connected between an output terminal of the DCC and the input/output pin.

Abstract: A particulate matter sensor and an exhaust gas purification system using the same are provided. A particular matter sensor according to some embodiments of the present invention includes a first insulation layer including a first electrode unit exposed on a first side thereof, which includes a plurality of first electrodes not electrically connected to each other, a second insulation layer arranged in parallel to the first insulation layer with a space therebetween, including a second electrode unit on a first side thereof, which includes a plurality of second electrodes electrically connected to each other, a temperature sensing unit formed on a first side of a third insulation layer located on a second side of the second insulation layer, and a heater unit formed on a first side of a fourth insulation layer located on a second side of the third insulation layer, the heater unit configured to heat the first and second electrode units.

Abstract: Provided is a method of manufacturing a porous protective layer for a gas sensor. The porous protective layer according to one Example of the present invention is manufactured by a method of manufacturing a porous protective layer for a gas sensor including (1) a step of introducing a composition for forming a porous protective layer including a pore former and a ceramic powder, which includes particles having a degree of deformation of 1.5 or more expressed by the following Relational Formula 1 according to the present invention, onto a sensing electrode for a gas sensor, and (2) a step of sintering the introduced composition for forming a porous protective layer.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: Provided is a flat plate-type oxygen sensor element. The flat plate-type oxygen sensor element according to an exemplary embodiment of the present invention includes: a first electrolyte layer having a sensing electrode exposed to a target gas; a second electrolyte layer on which a reference electrode is disposed; and a heating unit having a heating resistor surrounded by an insulating layer and disposed between the sensing electrode and the reference electrode, wherein the heating unit is disposed so that the heating resistor is located at a position ranging from 40 to 60% of a total height from an upper surface of the first electrolyte layer to a lower surface of the second electrolyte layer.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: A method for reverse-filling cosmetic material having an irreversible property and a cosmetic container filled therewith, including the steps of: sealing the top part of the cosmetic inner container, the top and bottom of which are open, with a filling mold, and turning the cosmetic inner container upside down to reverse-position the cosmetic inner container so that the sealed top part of the cosmetic inner container is directed downward and the open bottom part thereof is directed upward; and filling the cosmetic inner container through the bottom part thereof with the cosmetic material. In so doing, the top surface of the cosmetic material filled in the cosmetic container is smooth without any bumps, moisture seepage phenomenon is prevented, and cosmetic material having excellent applicability can be provided as the hardness thereof is relatively low by reverse-filling the cosmetic container with cosmetic material having an irreversible property, such as agar.

Abstract: A particulate matter sensor is provided. The particulate matter sensor includes: an insulating substrate; a first electrode unit, and a plurality of spaced electrodes; a second electrode unit and a heater unit. Wherein each of the spaced electrode includes a sensing unit, wherein the particulate matter is deposited on the sensing unit, and a capacitor unit is configured on the spaced electrode for measuring capacitance. The plurality of spaced electrodes and the rim electrode are electrically connected when particulate matter is deposited, and thereby the capacitance between the first electrode unit and the second electrode unit can be measured.

Abstract: Provided is a nonvolatile memory including a clock pin configured to receive an external clock signal during a duty correction circuit training period; a plurality of memory chips configured to perform a duty correction operation on an internal clock signal based on the external clock signal, the plurality of memory chips configured to perform the duty correction operation in parallel during the training period; and an input/output pin commonly connected to the plurality of memory chips, wherein each of the plurality of memory chips includes: a duty correction circuit (DCC) configured to perform the duty correction operation on the internal clock signal; and an output buffer connected between an output terminal of the DCC and the input/output pin.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: A cosmetic composition for skin whitening, wrinkle improvement or skin regeneration includes, as an active ingredient, exosomes derived from stem cells comprising proliferating stem cells.

Abstract: An electronic device is provided. The electronic device includes a first antenna for a first band and a second band, a second antenna for the second band and a third band and a pre-processing unit configured to generate, based on identifying a frequency band of a first signal received via the first antenna and a frequency band of a second signal received via the second antenna are the second band, a pre-processed signal by combining the first signal and the second signal based on a ratio of a weight factor, and to transmit the pre-processed signal to a first radio frequency (RF) receiver.

Abstract: A method for filling multiple colors of liquid color cosmetic materials, comprises the steps of: separating a sponge, into a plurality of sponge pieces by dividing the sponge; forming a coating film on the outer lateral side, or on the outer lateral side and on the lower surface of each of a plurality of the sponge pieces; impregnating different liquid color cosmetic materials into each of the sponge pieces having a coating film formed thereon; and fitting the angles of each of the sponge pieces, and coupling the sponge pieces. Liquid cosmetic materials having different colors are not mixed in one container without comprising a separate partition film, and a boundary line is clearly distinguished.

Abstract: Provided is a method of manufacturing a porous protective layer for a gas sensor. The porous protective layer according to one Example of the present invention is manufactured by a method of manufacturing a porous protective layer for a gas sensor including (1) a step of introducing a composition for forming a porous protective layer including a pore former and a ceramic powder, which includes particles having a degree of deformation of 1.5 or more expressed by the following Relational Formula 1 according to the present invention, onto a sensing electrode for a gas sensor, and (2) a step of sintering the introduced composition for forming a porous protective layer.

Abstract: Provided is a flat plate-type oxygen sensor element. The flat plate-type oxygen sensor element according to an exemplary embodiment of the present invention includes: a first electrolyte layer having a sensing electrode exposed to a target gas; a second electrolyte layer on which a reference electrode is disposed; and a heating unit having a heating resistor surrounded by an insulating layer and disposed between the sensing electrode and the reference electrode, wherein the heating unit is disposed so that the heating resistor is located at a position ranging from 40 to 60% of a total height from an upper surface of the first electrolyte layer to a lower surface of the second electrolyte layer.