Abstract: A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode. The second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode to be in contact with the third insulating layer. The first insulating layer and another portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode to be in contact with the second insulating layer.

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract: Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract: A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.

Abstract: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

Abstract: Provided is a polarization division multiplexed optical OFDM transmitter. The polarization division multiplexed optical OFDM transmitter includes a data demultiplexer, a training symbol generation unit and an optical up-converter and polarization division multiplexing unit. The data demultiplexer divides a transmission signal into a plurality of groups. The training symbol generation unit allocates a plurality of training symbols for each OFDM data which is included in the respective multiplexed groups, and allocates repetitive data in a time domain for the respective training symbols for data of 0 to periodically appear for the respective training symbols in a frequency domain. The optical up-converter and polarization division multiplexing unit performs optical frequency band conversion and polarization division multiplexing on an output of the training symbol generation unit to output a polarization division multiplexed optical OFDM signal corresponding to a plurality of polarization components.

Abstract: Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown.

Abstract: Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Abstract: Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced.

Abstract: The present disclosure relates to an apparatus for obtaining 3D information using a photodetector array. The apparatus for obtaining 3D information includes: a light source unit configured to generate an optical signal of a predetermined wavelength band; a light transmission optical lens unit provided on a path of the optical signal and configured to emit the optical signal output from the light source unit in parallel or at a predetermined angle; an optical scanning unit configured to scan the light output from the light transmission optical lens unit to a surface of an object to be measured; a light reception optical lens unit configured to collect the light reflected from the surface of the object; and a photodetection unit configured to convert collected optical signals into respective electrical signals by arraying one or more photodetectors such that light reception portions thereof are collected at a center.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.

Abstract: Provided is an FPA module capable of further improving a quality of an obtained 3-dimensional image by adjusting an interval of an arrangement of optical detectors and a size of the optical detector within an FPA module for obtaining the 3-dimensional image. An FPA module for obtaining a 3-dimensional image according to an exemplary embodiment of the present disclosure includes a plurality of light detectors configured to detect light reflected from a monitoring target, in which the plurality of light detectors is disposed at different intervals according to positions.

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract: Provided is an optical OFDM receiver. The optical OFDM receiver receives an optical signal dependent on the nonlinearity of a transmitter. The optical OFDM receives includes an optical down converter, a nonlinearity compensator, and an OFDM demodulator. The optical down converter converts the optical signal into an electrical signal. The nonlinearity compensator filters the electrical signal, for compensating distortion which is added to the optical signal when the transmitter performs optical modulation. The OFDM demodulator demodulates the distortion-compensated electrical signal in an OFDM scheme.

Abstract: Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Abstract: Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded.

Abstract: Provided is an optical OFDM receiver. The optical OFDM receiver receives an optical signal dependent on the nonlinearity of a transmitter. The optical OFDM receives includes an optical down converter, a nonlinearity compensator, and an OFDM demodulator. The optical down converter converts the optical signal into an electrical signal. The nonlinearity compensator filters the electrical signal, for compensating distortion which is added to the optical signal when the transmitter performs optical modulation. The OFDM demodulator demodulates the distortion-compensated electrical signal in an OFDM scheme.

Abstract: The inventive concept relates to an optical communication module. The optical communication module may include a metal block: an electrical device formed on the metal block; an optical device adhesive block formed on the metal block; an optical device formed on the optical device adhesive block and connected to the electrical device through a bonding interconnection; and a flat type optical waveguide formed on one side of the optical device adhesive block and optically aligned with the optical device.