Patents by Inventor Eun-Ji Kim

Eun-Ji Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11968990
    Abstract: The present application relates to creamer comprising vegetable lipids, casein, maltose, phosphates, and allulose.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: April 30, 2024
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Young Mi Lee, Seong Bo Kim, Yang Hee Kim, Seong Jun Cho, Myung Sook Choi, Young Ji Han, Ji Young Choi, Su Jung Cho, Un Ju Jung, Eun Young Kwon
  • Publication number: 20240132571
    Abstract: The present invention relates to a composition for preventing or treating a bone disease, obesity or an obesity-mediated metabolic disease, cancer, or cancer metastasis, and a method of screening a drug for treating the diseases, which includes an inhibitor of transmembrane 4 L six family member 19 (TM4SF19) expression or activity.
    Type: Application
    Filed: January 17, 2023
    Publication date: April 25, 2024
    Applicant: MedPacto Inc.
    Inventors: Seong Jin KIM, Su Jin PARK, Jin Sun HEO, Eun Ji HONG, Hae In AN, Min Woo KIM
  • Patent number: 11942427
    Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.
    Type: Grant
    Filed: September 19, 2022
    Date of Patent: March 26, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Yong Yoo, Jong Jin Lee, Rak Hwan Kim, Eun-Ji Jung, Won Hyuk Hong
  • Publication number: 20240092829
    Abstract: The present application relates to a peptide having protective activity against cell damage caused by particulate matter, and to uses for the peptide.
    Type: Application
    Filed: November 26, 2020
    Publication date: March 21, 2024
    Inventors: Yong Ji CHUNG, Eun Mi KIM, Eung Ji LEE, Han A KANG, Bo Byeol HWANG
  • Publication number: 20240097218
    Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 21, 2024
    Inventors: Min Kyu Sim, Jong Seok Park, Min Su Kim, Jae Hwan Lee, Ki Deok Han, Eun Ji Jo, Su Wan Park, Gi Yeong Jeon, June Hee Kim, Wi Dae Park, Dong Min Seo, Seol Hee Kim, Dong Yeop Lee, Jun Hyo Su, Byoung Eun Han, Seung Huh
  • Publication number: 20240088432
    Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.
    Type: Application
    Filed: April 12, 2023
    Publication date: March 14, 2024
    Inventors: Kyu Ju Kwak, Won Keun Kim, Eun Ji Kwon, Samuel Seo, Yeon Jong Oh, Kyoung Han Ryu, Dong Hyun Lee, Han Su Kim, Ji Whan Lee, Seong Hoon Choi, Seung Do Mun
  • Publication number: 20240081001
    Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.
    Type: Application
    Filed: May 1, 2023
    Publication date: March 7, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Soh Ra HAN, Yong Hyuck LEE, Hong Kwan LEE, Hyun Jun CHO, Min Ji KIM, Sung Woo EO, Eun Gil CHOI, Sang Woo HAN
  • Publication number: 20240021259
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Inventors: EUN-JI KIM, JUNG-JUNE PARK, JEONG-DON IHM, BYUNG-HOON JEONG, YOUNG-DON CHOI
  • Publication number: 20230365746
    Abstract: The present invention provides polyester and a method for preparing same, the polyester including a repeating unit derived from dihydroxyalkyl tetrahydrofuran obtained from biomass; and a repeating unit derived from short-branched aliphatic dicarboxylic acid. Thus, the polyester has a carbon reduction effect and may be utilized as a novel biomass polyethylene terephthalate (PET) for packaging, by having excellent transparency, impact resistance, flexibility and elastic modulus compared to conventional PET.
    Type: Application
    Filed: August 12, 2021
    Publication date: November 16, 2023
    Inventors: Da Kyoung YONG, Mee Hye JEONG, Jun Yeong kIM, Ji Min HA, Eun Ji Kim, Ki Hyun PARK
  • Publication number: 20230335520
    Abstract: Nonvolatile memory devices and methods of forming the same are provided. The devices may include an array region, an extension region, and a pad region and may include a substrate including a source plate. The devices may also include a mold structure that is on a front surface of the substrate and includes gate electrodes and mold insulating films alternately stacked in a stair shape in the extension region, a channel structure extending through the mold structure, a cell contact extending through the mold structure, a first insulator on the mold structure, a second insulator on a rear surface of the substrate, an pad on the second insulator, an contact extending through the first insulator, and a via formed by etching the second insulator and the substrate in the pad region. The source plate does not overlap the cell contact and the contact in a vertical direction.
    Type: Application
    Filed: January 4, 2023
    Publication date: October 19, 2023
    Inventors: EUN-JI KIM, Yoon Jo HWANG, Seo Jin PARK, Jun Seok BANG
  • Publication number: 20230298639
    Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.
    Type: Application
    Filed: May 25, 2023
    Publication date: September 21, 2023
    Inventors: EUN-JI KIM, JUNG-JUNE PARK, JEONG-DON IHM, BYUNG-HOON JEONG, YOUNG-DON CHOI
  • Publication number: 20230292521
    Abstract: A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit and a first bonding pad, the first bonding pad connected to the peripheral circuit, a cell structure on the peripheral circuit structure, the cell structure including a second bonding pad bonded to the first bonding pad, and a pad structure on the cell structure. The cell structure includes a cell substrate having a first face, a second face opposite to the first face, a first contact plug extending through the cell substrate and connected to an electrode layer, and a second contact plug extending through the cell substrate and connected to the cell substrate. Each of the first contact plug and the second contact plug is connected to the pad structure, and a bypass via is in contact with the pad structure on the second face.
    Type: Application
    Filed: January 12, 2023
    Publication date: September 14, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Woo Yong JEON, Eun-Ji Kim, Ji Young Kim, Moo Rym Choi
  • Patent number: 11742040
    Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Ji Kim, Jung-June Park, Jeong-Don Ihm, Byung-Hoon Jeong, Young-Don Choi
  • Patent number: 11736280
    Abstract: A quantum entity authentication apparatus and method. The quantum entity authentication apparatus includes a quantum state preparation unit for preparing an authentication quantum state that is generated based on an authentication key previously shared with an entity, a quantum channel verification unit for transmitting a quantum state, generated by performing an operation using a prestored unique operator on the authentication quantum state, to a quantum measurement device, and for verifying security of a quantum channel by using a result of Bell measurement and the authentication quantum state, the result of Bell measurement being revealed by the quantum measurement device for the quantum state, and a quantum entity authentication unit for, when the security of the quantum channel is verified, authenticating the entity using the result of the Bell measurement and the unique operator.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: August 22, 2023
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Changho Hong, Nayoung Kim, Osung Kwon, Younchang Jeong, Se Wan Ji, Eun Ji Kim, Seok Kim, Jingak Jang, Daesung Kwon
  • Publication number: 20230248703
    Abstract: The present invention provides a pharmaceutical composition for preventing or treating colitis comprising tegoprazan, which is a benzimidazole derivative compound, as an effective ingredient.
    Type: Application
    Filed: October 30, 2020
    Publication date: August 10, 2023
    Inventors: Jae Hee CHEON, Seung Won KIM, Mi Jeong SON, I Seul PARK, Dongkyu KIM, Bong Tae KIM, Eun Ji KIM, Jae Yong HAN
  • Patent number: 11705386
    Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: July 18, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Wuk Park, Sung Dong Cho, Eun Ji Kim, Hak Seung Lee, Dae Suk Lee, Dong Chan Lim, Sang Jun Park
  • Patent number: 11705166
    Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: July 18, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Ji Kim, Jung-June Park, Jeong-Don Ihm, Byung-Hoon Jeong, Young-Don Choi
  • Publication number: 20230202049
    Abstract: An embodiment device for controlling a service robot includes a communication device configured to communicate with the service robot and a controller configured to detect a present situation of the service robot by using various pieces of sensor information acquired from the service robot, determine a task appropriate to the present situation of the service robot, wherein the task includes one or more behaviors, and control the service robot based on an action set for each of the one or more behaviors of the task.
    Type: Application
    Filed: June 23, 2022
    Publication date: June 29, 2023
    Inventors: Sang Hyun Hwang, Il Yong Yoon, Eun Ji Kim, Si Hyun Joo, Gil Jin Yang
  • Publication number: 20230158001
    Abstract: The present invention relates to a pharmaceutical composition for preventing peptic ulcer and/or recurrence thereof containing a benzimidazole derivative. The pharmaceutical composition of the present invention may effectively prevent peptic ulcer and/or recurrence thereof, which may be caused by administration of a non-steroidal anti-inflammatory drug, for a long period of time without side effects.
    Type: Application
    Filed: April 13, 2021
    Publication date: May 25, 2023
    Inventors: Seokuee KIM, Yeong Hyeon JO, Eun Jee PARK, Bong Tae KIM, Heehyun KIM, Minja KANG, Geun Seog SONG, Naree SHIN, Eun Ji KIM, Eunbi CHO
  • Patent number: D1015162
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: February 20, 2024
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Eun Ji Park, Hyuk Lyul Kwon, Eun Young Lee, Seung Ho Kim, Eun Ji Kim