Abstract: A wafer cleaning method and apparatus clean a surface of a polished wafer. The wafer cleaning method includes: S101, wetting the surface of the wafer with DIW; S102, spraying the surface of the wafer with SC1 having a first preset temperature; S103, continuing to spray the surface of the wafer with SC1 having the first preset temperature, and controlling a brush simultaneously to scrub the surface of the wafer; S104, performing a spray cleaning on the surface of the scrubbed wafer with DIW having a second preset temperature for a first preset time; S105, repeating the steps S103 to S104 until a first preset number of times; S106, cleaning the surface of the wafer alternately with DHF and DIO3 after executing the step S105. Through the above method, the transition step of the DIW spray cleaning at the second preset temperature can be added in multiple and continuous scrubbings.

Abstract: A ferroelectric memory device includes an alternating stack of insulating layers and composite layers that are interlaced along a vertical direction, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and an inner ferroelectric material layer including a first ferroelectric material, and a vertical stack of electrically-non-insulating material portions located between the inner ferroelectric material layer and the composite layers. Each of the composite layers includes a respective electrically conductive layer and a respective outer ferroelectric material layer including a second ferroelectric material, embedding the respective electrically conductive layer, and contacting a respective electrically-non-insulating material portion.

Abstract: Provided is a bispecific chimeric antigen receptor targeting CD19 and CD22, which comprises extracellular antigen binding domains of heavy-chain variable regions and light-chain variable regions of anti-CD19 and anti-CD22 antibodies. Further provided is a bispecific CAR-T cell targeting CD19 and CD22.

Abstract: The present application provides a wall intelligent switch, a wireless intelligent switch and a switch mounting frame, wherein the wall intelligent switch comprises a housing, a detection member, a wireless communication module, a reset portion and at least one key; the reset acting force cooperates with a first rebound force of the detection member so that when the key is at the first pressing position, the reaction force is F1; when the key is pressed from the first pressing position to the second pressing position, the reaction force of the key jumps from F1 to F2, where F2<F1<400 g; and the difference between the displacement of the key at the first pressing position and the displacement at the second pressing position is ?2 mm. This enables the keys to give clear feedback to the user while improving the smooth degree of pressing.

Abstract: A circuit includes a first driver, a second driver, and a bias generator. First driver has a first bias terminal, a first reference terminal, a first driver input, and a first driver output. The second driver has a second bias terminal, a second reference terminal, a second driver input, and a second driver output. The bias generator has a first input, a second input, a first bias output, and a second bias output, the first input coupled to the first reference terminal, the second input coupled to the second reference terminal, the first bias output coupled to the first bias terminal, and the second bias output coupled to the second bias terminal, wherein the bias generator is configurable to generate, based on a supply voltage, a first bias voltage at the first bias output and a second bias voltage at the second bias output.

Abstract: Embodiments of this application provide a method for running a boot program of an electronic device, and an electronic device. In the method, the boot program in embodiments of this application may include two BIOSs, where one is a primary BIOS, and the other is a secondary BIOS. The electronic device stores the entire primary BIOS in a first storage, and stores some program blocks in the secondary BIOS in a second storage. When the primary BIOS is damaged, the electronic device may determine storage locations of program blocks in the secondary BIOS in the second storage, load these program blocks into a memory of the electronic device, and then run the program blocks in the secondary BIOS, so that the electronic device is powered on normally.

Abstract: A method of forming a memory device includes forming an alternating stack of insulating layers including a first insulating material and sacrificial material layers including a first sacrificial material over a substrate, forming a memory opening through the alternating stack, performing a first selective material deposition process that selectively grows a second sacrificial material from physically exposed surfaces of the sacrificial material layers to form a vertical stack of sacrificial material portions; forming a memory opening fill structure in the memory opening, where the memory opening fill structure includes a vertical stack of memory elements and a vertical semiconductor channel, and replacing a combination of the vertical stack of sacrificial material portions and the sacrificial material layers with electrically conductive layers.

Abstract: The present application provides tricyclic compounds that modulate the activity of the PI3K?, which are useful in the treatment of various diseases, including cancer.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and containing a vertical semiconductor channel and a memory film. The memory film includes a tunneling dielectric layer, a continuous charge storage material layer vertically extending through a plurality of the electrically conductive layers, a vertical stack of discrete charge storage elements located at levels of the electrically conductive layers and contacting a respective surface segment of an outer sidewall of the continuous charge storage material layer, and a vertical stack of discrete blocking dielectric material portions containing silicon atoms and oxygen atoms and located at the levels of the electrically conductive layers and vertically spaced apart from each other.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film. The memory film includes a memory material layer having a straight inner cylindrical sidewall that vertically extends through a plurality of electrically conductive layers within the alternating stack without lateral undulation and a laterally-undulating outer sidewall having outward lateral protrusions at levels of the plurality of electrically conductive layers.

Abstract: A semiconductor device is provided in the present disclosure. The semiconductor device includes a substrate, a plurality of fins formed on the substrate, a dummy gate structure formed across the plurality of fins and on the substrate, a first sidewall spacer formed on a sidewall of the dummy gate structure, an interlayer dielectric layer formed on a surface portion of each fin adjacent to the first sidewall spacer to cover a lower portion of a sidewall of the first sidewall spacer, and a second sidewall spacer formed on a top of the interlayer dielectric layer and covering a remaining portion of the sidewall of the first sidewall spacer. The top of the second sidewall spacer is coplanar with a top of the first sidewall spacer and the top of the dummy gate structure.

Abstract: Provided is a method for determining a proper plant spacing for vegetation ecological restoration in an arid region. The method includes the following steps: step 1, acquiring soil parameters and soil water parameters in a survey region; step 2, determining vegetation parameters for the survey region; step 3, collecting hydrological data of the survey region; step 4, determining a transpiration of a dominant plant species in a vegetation community of the survey region; step 5, calculating a thickness of a shallow groundwater action layer in the survey region; step 6, determining a thickness of an available water absorption layer; step 7, determining a water content within the thickness of the available water absorption layer; and step 8, determining the proper plant spacing for a vegetation. The method can effectively solve the problem of desertification of oases in arid regions.

Abstract: A miter saw has a base having a detent notch, a table rotatably connectable to the base, a pivoting assembly connected to the table, and a saw assembly supported by the pivoting assembly. The saw assembly has a blade movable downwardly for a cutting operation. A locking mechanism is disposed on the table. The locking mechanism is movable between an unlocked position and a locked position for selectively unlocking and locking the table for rotational movement relative to the base about the miter axis. The locking mechanism has a lock lever rotatably connected to the table. The lock lever has a handle for moving locking mechanism between the locked and unlocked positions. The saw also has a miter detent assembly for selectively engaging and disengaging the detent notch.

Abstract: The present disclosure provides compounds, compositions, and methods useful for inhibiting PI3K?, and/or treating a disease, disorder, or condition associated with PI3K?, and/or treating cancer.

Abstract: A memory device includes a polycrystalline germanium-containing semiconductor source line layer containing germanium at an atomic percentage greater than 50%, an alternating stack of insulating layers and electrically conductive layers located over the polycrystalline germanium-containing semiconductor source line layer, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor channel having an end surface in electrical contact with the polycrystalline germanium-containing semiconductor source line layer, and an interfacial metal alloy layer located between the polycrystalline germanium-containing semiconductor source line layer and a bottommost insulating layer within the alternating stack.

Abstract: A device structure includes a layer stack that includes a first alternating stack of first insulating layers and first electrically conductive layers which overlies a base material layer, and an opening fill structure vertically extending through each layer within the layer stack and laterally enclosed by or contacted by the first alternating stack. The opening fill structure includes a first portion having a first variable width that increases linearly with a vertical distance from the base material layer, a second portion that overlies and is adjoined to the first portion and having a second variable width that decreases non-linearly with the vertical distance from the base material layer and laterally bounded by a tapered annular surface segment having a convex vertical profile, and a third portion that overlies the second portion and having a third variable width that increases linearly with the vertical distance from the base material layer.

Abstract: A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of discrete ferroelectric material portions and a vertical semiconductor channel. In one embodiment, the discrete ferroelectric material portions include a ferroelectric alloy material of a first dielectric metal oxide material and a second dielectric metal oxide material. In another embodiment, each of the discrete ferroelectric material portions is oxygen-deficient.

Abstract: A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of discrete ferroelectric material portions and a vertical semiconductor channel. In one embodiment, the discrete ferroelectric material portions include a ferroelectric alloy material of a first dielectric metal oxide material and a second dielectric metal oxide material. In another embodiment, each of the discrete ferroelectric material portions is oxygen-deficient.