Abstract: A cosmetic container that enables a user to easily mix a first product and a second product, that are stored separately within the cosmetic container, with a simple twist of the dialer before the first use. The first product is in a first product container, while the second is in a second product container. The cosmetic container includes the first product container, the second product container, a pump dispenser, an outer cap, a seal cap, a piston, an elevator, and the dialer. The dialer encloses the second product container and, when rotated, moves the elevator, which in turn pushes the piston inside the second product container. The piston, with a central rod, creates an aperture in the seal cap for the second product to flow into the first product container. This process ensures easy mixing before dispensing by removing the outer cap and using the pump dispenser.

Abstract: An applicator head for applying a product including a cosmetic, care, or pharmaceutical product onto the keratinous substrate. The applicator head includes an applying member elongated along a longitudinal axis. The applying member includes at least one sidewall and a distal end face that is inclined. The at least one sidewall has an extended portion that extends beyond the distal end face of the applying member. The extended portion peripherally encloses the distal end face to define a cavity at the distal end portion of the applying member. The cavity opens upwardly at a distal end of the applying member and has a closed bottom end that is defined by the distal end face of the applying member. The cavity is suitable for holding a cosmetic product. The extended portion is in form of multiple petals that surround the distal end face.

Abstract: Methods for reducing warpage and increasing the effectiveness of hybrid bond void testing are disclosed. A semiconductor package has a first side and a second side, with a dummy bond pad located on the second side, and at least one metal-containing layer between the first side and the second side (for example a redistribution layer). A warpage control structure is provided in the semiconductor package that extends from the first side into the semiconductor package, and is aligned with the dummy bond pad. The warpage control structure is made of a low-density filling. This relieves stress that causes/increases warpage. When a hybrid bond is formed between the semiconductor package and another semiconductor package, the warpage control structure maximizes acoustic wave penetration for testing the quality of the hybrid bond at the dummy bond pad.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A dropper package for dispensing and applying a fluid product, comprising a container body for storing the fluid product and a dropper assembly coupled to one end of the container body. The dropper assembly comprises a deformable bulb, a tube with its proximal end connected to the deformable bulb, and an applicator tip connected to a distal end of the tube. The applicator tip comprises a shank portion and an applying member that has two opposing main application faces. The applicator tip includes a groove on its outer surface that extends from a proximal end of the shank portion to at least a length of the applying member on one of the two opposing main application faces. The applying member is adapted to apply and dispense the fluid product in a very controlled manner as well as massage the user's keratinous surface.

Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.

Abstract: Some embodiments relate to an integrated chip including a bottom electrode over a semiconductor substrate. A seed layer overlies the bottom electrode. A data storage structure is arranged on the seed layer. A first buffer layer is arranged between the bottom electrode and the seed layer. The first buffer layer is in physical contact with the seed layer and opposing sidewalls of the first buffer layer are aligned with opposing sidewalls of the seed layer.

Abstract: A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.