Patents by Inventor Feng Ying

Feng Ying has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11185145
    Abstract: A cosmetic applicator for applying a composition including a cosmetic, care or pharmaceutical composition onto the keratinous substrate. The cosmetic applicator further comprises an applicator head, a stem and a closure. The applicator head includes an applying member which comprises a support body extending in along a central longitudinal axis of the applying member. The support body is curved along the central longitudinal axis and includes a first application face and a second application face opposing the first application surface. The first application face and a second application face are bounded by two lateral edges. The support body of the applying member comprises a recessed region formed at a distal portion of the first application face and a hollow region formed at a proximal portion of the second application face.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: November 30, 2021
    Assignee: APR Beauty Group Inc.
    Inventors: Min-Yan Zheng, Feng-ying Fu, Jun Shen
  • Publication number: 20210359002
    Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode layer over a substrate. A first etch process is performed, thereby defining one or more holes in the bottom electrode layer and defining a bottom electrode. A pair of insulators are formed within the one or more holes such that the insulators are disposed on opposing sides of the bottom electrode. A buffer layer, a seed layer, a magnetic tunnel junction (MTJ) stack, and a top electrode are formed over the bottom electrode. A second etch process is performed to remove a portion of the buffer layer, the seed layer, the MTJ stack, and the top electrode, thereby defining a memory cell.
    Type: Application
    Filed: July 29, 2021
    Publication date: November 18, 2021
    Inventors: Tsann Lin, Chien-Min Lee, Ji-Feng Ying
  • Patent number: 11165012
    Abstract: A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-SIT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Tsann Lin
  • Patent number: 11154126
    Abstract: A replenishable dispenser for dispensing a liquid product. The replenishable dispenser comprises a housing, a canister for storing the liquid product, a triggering unit, an application member and a suction assembly for dispensing the liquid product from the canister to the application member upon being actuated by the triggering unit. The canister is detachably connected to the housing to replace the canister upon being exhausted with a new canister to replenish the dispenser. The dispenser further includes an applicator tip detachably connected to a holding unit of the application member.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: October 26, 2021
    Assignee: APR Beauty Group Inc
    Inventors: Min-Yan Zheng, Feng-Ying Fu
  • Publication number: 20210315361
    Abstract: A cosmetic applicator for applying a product including a cosmetic, care, or pharmaceutical product onto the keratinous substrate. The cosmetic applicator comprises an applicator head and wherein the applicator head further comprises an applying member. The applying member includes at least one main face which is bounded by two opposing lateral edges. At least a portion of the one of the at least two lateral edges includes at least four parallel incisions which make a non-zero angle with a central longitudinal axis of the cosmetic applicator. The at least four parallel incisions form at least three parallel applicator tabs on the applying member.
    Type: Application
    Filed: January 26, 2021
    Publication date: October 14, 2021
    Inventors: Min-Yan ZHENG, Feng-Ying FU
  • Publication number: 20210315362
    Abstract: A cosmetic package for a cosmetic, a care or pharmaceutical product which can be applied onto keratinous substrates such as skin, lips, under eyes, eyelids, cheeks, or eyebrows or any other part of the body. The cosmetic package comprises a base, a pivot frame connected to the base, and a plurality of cosmetic containers. The plurality of cosmetic containers has a plurality of reservoirs and a plurality of applicators removably coupled to the respective plurality of reservoirs. The pivot frame is configured to have a closed position and at least one open position. In the open position of the pivot frame, caps of the plurality of applicators can be disengaged from the respective plurality of reservoirs. In a closed position of the pivot frame, the pivot frame prevents the caps of the plurality of applicators from disengaging from the respective plurality of reservoirs.
    Type: Application
    Filed: March 31, 2021
    Publication date: October 14, 2021
    Inventors: Min-Yan ZHENG, Feng-Ying FU
  • Publication number: 20210298450
    Abstract: A cosmetic package comprising a cosmetic applicator for applying a product including a cosmetic, care, or pharmaceutical product onto the keratinous substrate. The cosmetic applicator comprises an application member that includes a flexible zone at a proximal portion of the application member. The flexible zone further includes at least two horizontal grooves that extend on a first face of the application member, and at least two horizontal grooves that extend on a second face opposite to the first face. When a pressure is exerted on the application member during the application of the cosmetic product, the flexible zone enables the application member to flex towards either the first face or the second face.
    Type: Application
    Filed: January 26, 2021
    Publication date: September 30, 2021
    Inventors: Min-Yan ZHENG, Feng-Ying FU
  • Publication number: 20210265424
    Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Inventors: Ji-Feng YING, Duen-Huei HOU
  • Patent number: 11088201
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsann Lin, Chien-Min Lee, Ji-Feng Ying
  • Publication number: 20210241809
    Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 5, 2021
    Inventors: Ji-Feng YING, Jhong-Sheng WANG, Duen-Huei HOU
  • Publication number: 20210148695
    Abstract: A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
    Type: Application
    Filed: January 4, 2021
    Publication date: May 20, 2021
    Inventors: Ji-Feng YING, Baohua NIU, David Hung-I SU
  • Patent number: 11004901
    Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ji-Feng Ying, Duen-Huei Hou
  • Patent number: 10916286
    Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: February 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Duen-Huei Hou
  • Publication number: 20210036055
    Abstract: A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.
    Type: Application
    Filed: January 9, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Tsann Lin
  • Patent number: 10883820
    Abstract: A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: January 5, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Baohua Niu, Ji-Feng Ying, David Hung-I Su
  • Patent number: 10868079
    Abstract: A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.
    Type: Grant
    Filed: May 25, 2020
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Ji-Feng Ying, Baohua Niu
  • Publication number: 20200386832
    Abstract: An apparatus for measuring a magnetic field strength is provided. The apparatus includes a stage on which a sample to be measured is placed, a cantilever having a tip, an optical system having a light source and a light receiver, and a microwave power source. The tip is a diamond tip having a nitrogen vacancy defect. The optical system is configured such that excitation light from the light source is focused at the diamond tip. The cantilever is configured as a coaxial microwave antenna through which microwaves from the microwave power source are supplied to the diamond tip.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 10, 2020
    Inventors: Baohua NIU, Ji-Feng YING
  • Patent number: 10861574
    Abstract: A memory test system is disclosed that includes a memory integrated circuit (IC) and a memory functional tester. The memory IC includes a plurality of memory banks, where each memory bank includes a plurality of memory cells. The memory functional tester includes an adjustable voltage generator circuit, a read current measurement circuit, and a controller. The memory functional tester performs a write/read functional test on the memory bank over a number of write control voltages to determine a preferred write control voltage, where the preferred write control voltage is designated for use during subsequent write operations to the memory bank during an operational mode.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 8, 2020
    Inventors: Baohua Niu, Ji-Feng Ying
  • Publication number: 20200357986
    Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Baohua NIU, Ji-Feng YING
  • Publication number: 20200345822
    Abstract: Disclosed are a whole-cell tumor vaccine based on the principle of extracellular traps and a method of making the same, where a CpG ODN network similar to the extracellular trap in structure is formed on the tumor cell surface. The tumor cells are coated with a histone and CpG ODN to form the CpG ODN-coated tumor cells, which are inactivated to produce the whole-cell tumor vaccine. The vaccine of the invention, after injected to tumor model mice, can induce the occurrence of effective immune response to achieve the effective treatment for tumors.
    Type: Application
    Filed: April 7, 2020
    Publication date: November 5, 2020
    Inventors: Guang-Hong TAN, Feng-Ying HUANG, Liming ZHANG, Zhuoxuan LV, Ying-Ying LIN