Abstract: Disclosed are a bacteriologically-modified whole-cell tumor vaccine and a method of making the same. The method includes: lysing bacteria at logarithmic growth phase to obtain a bacterial lysate; mixing the bacterial lysate with an excessive amino compound solution to aminate the bacterial lysate in the presence of EDC; mixing the aminated bacterial lysate with the tumor cells for a certain period of time to produce bacteriologically-modified tumor cells; and inactivating the bacteriologically-modified tumor cells to produce the bacteriologically-modified whole-cell tumor vaccine. The bacteriologically-modified whole-cell tumor vaccine has been demonstrated to have desirable therapeutic effect in tumor model mice.

Abstract: A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.

Abstract: A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

Abstract: An apparatus for measuring a magnetic field strength is provided. The apparatus includes a stage on which a sample to be measured is placed, a cantilever having a tip, an optical system having a light source and a light receiver, and a microwave power source. The tip is a diamond tip having a nitrogen vacancy defect. The optical system is configured such that excitation light from the light source is focused at the diamond tip. The cantilever is configured as a coaxial microwave antenna through which microwaves from the microwave power source are supplied to the diamond tip.

Abstract: A plural-fans driving apparatus is provided to drive a first fan and a second fan, and the first fan and the second fan are three-phase fans. The plural-fans driving apparatus includes a controller, a first three-phase motor driver structure, a second three-phase motor driver structure, and a protection and input interface circuit. The protection and input interface circuit is coupled to the first three-phase motor driver structure and the second three-phase motor driver structure, and protects the first three-phase motor driver structure and the second three-phase motor driver structure. The controller controls the first three-phase motor driver structure to drive the first fan, and controls the second three-phase motor driver structure to drive the second fan.

Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.

Abstract: A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.

Abstract: A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.

Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.

Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: A memory test system is disclosed that includes a memory integrated circuit (IC) and a memory functional tester. The memory IC includes a plurality of memory banks, where each memory bank includes a plurality of memory cells. The memory functional tester includes an adjustable voltage generator circuit, a read current measurement circuit, and a controller. The memory functional tester performs a write/read functional test on the memory bank over a number of write control voltages to determine a preferred write control voltage, where the preferred write control voltage is designated for use during subsequent write operations to the memory bank during an operational mode.

Abstract: In the disclosure, a non-volatile memory device includes a resistive memory cell and a write and read circuit. The write and read circuit is coupled to the resistive memory cell and configured to combine a perturbation AC signal with a first writing signal, so as to generate a second writing signal. Then, the write and read circuit applies the second writing signal to the resistive memory cell to program the resistive memory cell. The combination of the oscillation signal and the first writing signal (constant DC signal) and AC signal would penetrate the shielding effect of the insulating layer and free the stuck charges.

Abstract: A memory test system is disclosed that includes a memory integrated circuit (IC) and a memory functional tester. The memory IC includes a plurality of memory banks, where each memory bank includes a plurality of memory cells. The memory functional tester includes an adjustable voltage generator circuit, a read current measurement circuit, and a controller. The memory functional tester performs a write/read functional test on the memory bank over a number of write control voltages to determine a preferred write control voltage, where the preferred write control voltage is designated for use during subsequent write operations to the memory bank during an operational mode.

Abstract: A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.