Abstract: The present disclosure generally relates to methods and user interfaces for authentication, including providing authentication at a computer system in accordance with some embodiments.

Abstract: Systems and methods described herein relate to the prediction of effects of data purging on data sources that are related through hierarchical data relationships. A purge request comprises a set of purge parameters that identify a data source and define one or more purge criteria for purging of data items of the data source. A plurality of impacted data sources is identified based on one or more hierarchical data relationships held by the data items of the data source. The impacted data sources include the data source and one or more additional data sources. The purge parameters are provided to a machine learning model to obtain output indicative of a predicted effect of execution of the purge request on the impacted data sources. The predicted effect is caused to be presented at the user device prior to the execution of the purge request.

Abstract: A manufacturing method for an array substrate, an array substrate, and a display apparatus. The manufacturing method comprises: step S100, providing a base substrate; step S200, forming a driving circuit layer on one side of the base substrate the driving circuit layer comprising a plurality of wires and a plurality of bonding pads; step S300, forming a removable protective layer on the side of the driving circuit layer away from the base substrate; and step S400, connecting functional devices to the bonding pads, the removable protective layer being decomposed and removed in step S400. Between step S200 and step S300, there are no steps of forming an inorganic protective layer and patterning the inorganic protective layer.

Abstract: Embodiments of this application provide a method, an apparatus, and a device for screen display, and a storage medium. Spectral information of light of a plurality of sub-colors in an original color light color gamut of a screen display picture is obtained separately. A melanopic lux per photopic lux ratio of the light of the sub-colors is calculated based on the spectral information of the light of the sub-colors. Sub-color light having a melanopic lux per photopic lux ratio that exceeds a preset melanopic lux per photopic lux ratio standard is eliminated from the original color light, so that the screen displays updated color light, where the preset melanopic lux per photopic lux ratio standard is a standard set based on a goal of reducing melatonin inhibition. The sub-color light is eliminated in a targeted manner based on the preset melanopic lux per photopic lux ratio standard.

Abstract: An IC device with one or more transistors may also include one or more vias and jumpers for delivering power to the transistors. For instance, a via may be coupled to a power plane. A jumper may be connected to the via and an electrode of a transistor. With the via and jumper, an electrical connection is built between the power plane and the electrode. The via may be self-aligned. The IC device may include a dielectric structure at a first side of the via. A portion of the jumper may be at a second side of the via. The second side opposes the first side. The dielectric structure and the portion of the jumper may be over another dielectric structure that has a different dielectric material from the dielectric structure. The via may be insulated from another electrode of the transistor, which may be coupled to a ground plane.

Abstract: An IC device may include a semiconductor structure and a backside semiconductor structure over the semiconductor structure. The semiconductor structure and backside semiconductor structure may constitute the source or drain region of a transistor. The backside semiconductor structure may be closer to the backside of a substrate of the IC device than the semiconductor structure. The backside semiconductor structure may be formed at a lower temperature than the semiconductor structure. The backside semiconductor structure may have one or more different materials from the semiconductor structure. For instance, a semiconductor material in the backside semiconductor structure may have a different crystal direction from a semiconductor material in the semiconductor structure. As another example, the backside semiconductor structure may have one or more different chemical compounds from the semiconductor structure.

Abstract: Described in certain example embodiments herein are programmable nuclease-peptidase compositions, systems, and methods for the manipulation of nucleic acids and/or polypeptides. In some embodiments, the programmable nuclease-peptidase composition comprises a repeat-associated mysterious protein (RAMP) polypeptide; a guide molecule capable of forming a RAMP-guide molecule complex with the RAMP polypeptide and directing sequence specific binding of the complex to a target polynucleotide; and a peptidase capable of binding to the RAMP polypeptide, the guide molecule, or further complexing with the RAMP-guide molecule complex, wherein binding of the RAMP-guide molecule complex to the target polynucleotide initiates binding and/or interaction of the peptidase with a target polypeptide.

Abstract: The invention provides a cell library for use in detecting protein expression comprising a plurality of cells, wherein each cell comprises a polynucleotide sequence encoding a detectable marker integrated into the genome of the cell in frame with a protein coding gene selected from a set of target genes, wherein the library comprises more than one cell tagged at each target gene, as well as a cell library for use in detecting protein interactions between a protein of interest and a set of target proteins and a cell library for use in detecting protein modifications. The invention also provides methods of constructing a cell library for use in proteomics, as well as methods for sequencing integration sites of a donor sequence inserted into the genome of a cell. Also provided are systems for analysis of proteins in a cell and kits comprising vectors for tagging a population of cells and for performing proteomics studies.

Abstract: Disclosed are a display screen assembly and a mobile terminal. The display screen assembly includes a transparent cover plate and a display module. The transparent cover plate includes a transparent region and a light-shielding region located at a side edge of the transparent region. The transparent region comprises a first inner surface, and the light-shielding region comprises a second inner surface connected to the first inner surface. The display module is stacked on the first inner surface of the transparent region. A charge blocking layer is arranged on at least a part of the second inner surface of the light-shielding region, and the charge blocking layer extends along two opposite side edges of the display module to block charges generated outside the mobile terminal from entering the display module.

Abstract: Provided is a display substrate. The display substrate includes: a substrate body; and a plurality of support pillars disposed on the substrate body, wherein the support pillar includes a first surface in contact with the substrate body, and a second surface opposite to the first surface; wherein in any direction parallel to the substrate body, a ratio of a width of the first surface to a width of the second surface is greater than or equal to 0.8, and is less than or equal to 1.2.

Abstract: Described herein are engineered antigen presenting cells that can be capable of modulating a target T-cell in a T-cell antigen specific manner. In some embodiments, the engineered APCs can include a modified antigen presentation pathway. Also described herein are methods of making and using the engineered antigen presenting cells.

Abstract: Described in certain example embodiments herein are engineered delivery vesicle generations systems capable of producing engineered delivery vesicles containing two or more different retroelement polypeptides. Also described herein are methods of making and using the engineered delivery vesicles, such as to deliver one or more cargoes.

Abstract: Technologies directed to respiration monitoring based on noise channel state information (CSI) data are described. A method includes receiving CSI data representing channel properties of a wireless channel used by a first wireless device and a second wireless device located in a geographical region. The method generates a set of CSI samples by sampling the CSI data and removes one or more outlier CSI samples using a sparse outlier process, and removes a cluster of outlier samples using a cluster outlier process. The method determines Fast Fourier Transform (FFT) data for each channel subcarrier index and a signal-to-noise ratio (SNR) value for each channel subcarrier index, and identifies a first number of channel subcarrier indexes having highest SNR values to obtain a subset of FFT data, which represents a breathing spectrum. The method determines a respiratory rate of a user in the geographical region from the subset of the FFT data.

Abstract: Systems and methods described herein relate to the real-time verification of data purges. A first subprocess of a data purging process is executed to purge a plurality of data items. A system accesses purge result data providing an indication of a result of the first subprocess. The system determines, based on the purge result data, that the first subprocess was not executed in accordance with a purge policy associated with the data purging process. In response to determining that the first subprocess was not executed in accordance with the purge policy, the system adjusts a state of the data purging process. A second subprocess of the data purging process is then executed according to the adjusted state.

Abstract: Integrated circuit structures having deep via bar width tuning are described. For example, an integrated circuit structure includes a plurality of gate lines extending over first and second semiconductor nanowire stack channel structures or fin structures. A plurality of trench contacts is intervening with the plurality of gate lines. A conductive structure is between the first and second semiconductor nanowire stack channel structures or fin structures, the conductive structure having a first width in a first region and a second width in a second region between the first and second semiconductor nanowire stack channel structures or fin structures, the second width different than the first width.

Abstract: The present disclosure provides a method for manufacturing an aspherical prism and an aspherical prism. The method includes step S1, forming a prism and a lens into one piece to obtain a forming body glass by using a hot-pressing molding; step S2, adhering the forming body glass to a tooling, and performing a right-angle surface milling on the forming body glass according to a preset size while reserving a processing amount for a polishing process; step S3, adhering the forming body glass formed after the right-angle surface milling to an optical backing plate for polishing; step S4, cutting the forming body glass formed after the polishing; step S5, coating the forming body glass formed after the cutting; and step S6, inking the forming body glass formed after the coating. The method can improve the structural precision and processing efficiency of the aspherical prism.

Abstract: Multiple voltage threshold integrated circuit structures with local layout effect tuning, and methods of fabricating multiple voltage threshold integrated circuit structures with local layout effect tuning, are described. For example, an integrated circuit structure includes a first fin structure or vertical arrangement of horizontal nanowires. A second fin structure or vertical arrangement of horizontal nanowires is laterally spaced apart from the first fin structure or vertical arrangement of horizontal nanowires. An N-type gate structure is over the first fin structure or vertical arrangement of horizontal nanowires. A P-type gate structure is over the second fin structure or vertical arrangement of horizontal nanowires, the P-type gate structure in contact with the N-type gate structure with a PN boundary between the P-type gate structure and the N-type gate structure.

Abstract: Trench contact structures with etch stop layers, and methods of fabricating trench contact structures with etch-stop layers, are described. In an example, an integrated circuit structure includes a fin structure. An epitaxial source or drain structure is on the fin structure. An isolation structure is laterally adjacent to sides of the fin structure. A dielectric layer is on at least a portion of a top surface of the isolation structure and partially surrounds the epitaxial source or drain structure and leaves an exposed portion of the epitaxial source or drain structure. A conductive trench contact structure is on the exposed portion of the epitaxial source or drain structure. The conductive trench contact structure does not extend into the isolation structure.

Abstract: Integrated circuit structures having internal spacers for 2D channel materials, and methods of fabricating integrated circuit structures having internal spacers for 2D channel materials, are described. For example, an integrated circuit structure includes a stack of two-dimensional (2D) material nanowires. A gate structure is vertically around the stack of 2D material nanowires. Internal gate spacers are between vertically adjacent ones of the stack of 2D material nanowires and laterally adjacent to the gate structure. The 2D material nanowires are recessed relative to the internal gate spacers. Conductive contact structures are at corresponding ends of the stack of 2D material nanowires, the conductive contact structures adjacent to the internal gate spacers and vertically overlapping with the internal gate spacers.