Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.

Abstract: Memory devices, and methods of operating similar memory devices, include an array of memory cells comprising a plurality of access lines each configured for biasing control gates of a respective plurality of memory cells of the array of memory cells, wherein the respective plurality of memory cells for one access line of the plurality of access lines is mutually exclusive from the respective plurality of memory cells for each remaining access line of the plurality of access lines, and a controller having a plurality of selectively-enabled operating modes and configured to selectively operate the memory device using two or more concurrently enabled operating modes of the plurality of selectively-enabled operating modes for access of the array of memory cells, with each of the enabled operating modes of the two of more concurrently enabled operating modes utilizing an assigned respective portion of the array of memory cells.

Abstract: Memory devices for facilitating pattern matching and having an array of memory cells, a plurality of key registers to store a representation of a key word, and a plurality of multiplexers, each multiplexer of the plurality of multiplexers to select a representation of a bit from a key register of the plurality of key registers to compare to data stored in the array of memory cells.

Abstract: Non-volatile memory having a non-volatile memory array adapted to store a configuration routine for a low power dynamic random access memory (LPDRAM), a memory interface for receiving addresses from an external device for access of data stored in the non-volatile memory array, and an internal controller adapted to communicate with a LPDRAM coupled to the non-volatile memory and configure operational settings of the LPDRAM using the configuration routine, as well as systems containing similar non-volatile memory.

Abstract: Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.

Abstract: Memories including a data line, a plurality of strings of series-connected memory cells selectively connected to the data line, a plurality of first access lines each coupled to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells, and a plurality of second access lines each coupled to a control gate of a respective memory cell of a respective string of series-connected memory cells of the plurality of strings of series-connected memory cells, as well as methods of operating similar memories.

Abstract: Memory devices for facilitating pattern matching and having an array of memory cells, a plurality of key registers to store a representation of a key word, and a plurality of multiplexers, each multiplexer of the plurality of multiplexers to select a representation of a bit from a key register of the plurality of key registers to compare to data stored in the array of memory cells.

Abstract: Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.

Abstract: Low power DRAM (LPDRAM) memory devices for communication with a non-volatile memory coupled to the LPDRAM memory device, and systems containing such LPDRAM and non-volatile memory facilitate configuring the LPDRAM memory device using routines stored on the non-volatile memory.

Abstract: Memory devices, and methods of operating similar memory devices, include an array of memory cells comprising a plurality of access lines each configured for biasing control gates of a respective plurality of memory cells of the array of memory cells, wherein the respective plurality of memory cells for one access line of the plurality of access lines is mutually exclusive from the respective plurality of memory cells for each remaining access line of the plurality of access lines, and a controller having a plurality of selectively-enabled operating modes and configured to selectively operate the memory device using two or more concurrently enabled operating modes of the plurality of selectively-enabled operating modes for access of the array of memory cells, with each of the enabled operating modes of the two of more concurrently enabled operating modes utilizing an assigned respective portion of the array of memory cells.

Abstract: Methods for operating a memory, and memory configured to perform similar methods, include programming a first series string of memory cells of a first group of memory cells such that pairs of complementary memory cells have complementary states to provide a first minterm, the first minterm comprising a plurality of first variables wherein each variable is enabled responsive to a state of its respective memory cell, and programming a second series string of memory cells of a second group of memory cells such that pairs of complementary memory cells have complementary states to provide a second minterm, the second minterm comprising the first minterm that is enabled responsive to the state of its respective memory cell, the second minterm further comprising a plurality of second variables that are each enabled responsive to the state of their respective memory cell.

Abstract: Configurable operating mode memory devices are disclosed. In at least one embodiment, a memory device is configurable into one or more operating modes. An array of memory cells can be allocated into one or more partitions where each partition is associated only with a particular mode of operation. In at least one other embodiment, a memory device is configured to store user data in a portion of a memory array and to store data corresponding to a logical function associated with a different operating mode of the memory device in a different portion of the memory array.

Abstract: Methods for operating a memory, and memory configured to perform similar methods, include programming a first series string of memory cells of a first group of memory cells such that pairs of complementary memory cells have complementary states to provide a first minterm, the first minterm comprising a plurality of first variables wherein each variable is enabled responsive to a state of its respective memory cell, and programming a second series string of memory cells of a second group of memory cells such that pairs of complementary memory cells have complementary states to provide a second minterm, the second minterm comprising the first minterm that is enabled responsive to the state of its respective memory cell, the second minterm further comprising a plurality of second variables that are each enabled responsive to the state of their respective memory cell.

Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.

Abstract: Methods for operating memory cells include applying a respective minterm, comprising a plurality of variables, to control gates of series strings of memory cells, each series string programmed as a plurality of pairs of complementary memory cells such that certain ones of the plurality of variables are enabled, and logically combining each of the minterms into a logic function output. Memories include a plurality of memory cells configured in series strings of memory cells, wherein each series string of memory cells is configured to provide a minterm comprising a plurality of variables, each variable enabled responsive to a state of an associated, respective memory cell.

Abstract: A memory device has first and second strings of memory cells coupled to a data line. The first string is for storing a first bit having a first bit significance, and the second string is for storing a second bit having a second bit significance different than the first bit significance. A first resistor is coupled in series with the first string. A second resistor is coupled in series with the second string. The memory device is configured to set the first resistor to a first resistance based on the first bit significance and the second resistor to a second resistance based on the second bit significance so that the second resistance is different than the first resistance. The memory device is configured to compare a first bit of input data to the first bit and to compare a second bit of the input data to the second bit.

Abstract: Apparatus and methods of operating a memory include storing a value of an attribute of a feature vector to a pair of memory cells by programming each of the memory cells to a respective data state of three or more data states, searching for an exact match to a particular value of the attribute by applying respective voltage levels to control gates of the memory cells to activate both memory cells only when the value of the attribute is the particular value, and searching for an inexact match to the particular value of the attribute by applying respective voltage levels to control gates of the memory cells to activate both memory cells when the value of the attribute is within a range of possible values of the attribute including the particular value.

Abstract: Methods of operating electronic systems having a memory include reading indications of memory block quality from a plurality of memory blocks of the memory in which a memory defect has been detected, wherein a value of the indication of memory block quality stored in a respective memory block of the plurality of memory blocks indicates a type of memory defect detected in the respective memory block, and, in response to the values of the indications of memory block quality, deeming a first portion of memory blocks of the plurality of memory blocks as usable, allocating a second portion of memory blocks of the plurality of memory blocks for storing only data of a particular type, and indicating a third portion of memory blocks of the plurality of memory blocks as defective.

Abstract: Content addressable memory (CAM) devices provide for high density, low cost CAM devices. CAM devices include a non-volatile memory array having a plurality of NAND memory cell strings, wherein a NAND memory cell string of the non-volatile memory array comprises a plurality of CAM memory cells, and wherein the CAM memory cells comprise non-volatile memory cells of a same NAND memory cell string. The CAM devices further include a control circuit, wherein the control circuit is adapted to search data words stored in the plurality of NAND memory cell strings for a match to at least a portion of an input data word.

Abstract: Memory devices for facilitating pattern matching and having an array of memory cells, a plurality of key registers to store a representation of a key word, and a plurality of multiplexers, each multiplexer of the plurality of multiplexers to select a representation of a bit from a key register of the plurality of key registers to compare to data stored in the array of memory cells.