Abstract: A high-brightness vertical light emitting diode (LED) device includes an outwardly located metal electrode having a low illumination side and a high illumination side. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

Abstract: The present invention relates to a fiber-containing structure comprising an interwoven and welded base material and a welded elastomer layer, and at least one part of the base material and the welded elastomer layer are welded to each other. The invention also relates to a method for manufacturing the fiber-containing structure and a shoe structure containing the fiber-containing structure.

Abstract: The present disclosure provides a fabric including at least one interlaced thermoplastic yarn. The fabric includes a first region and a second region. At least a portion of the thermoplastic yarn in the first region is fused together, and the thermoplastic yarn in the second region is not fused.

Abstract: A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

Abstract: The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.

Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array.

Abstract: The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.

Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array.

Abstract: The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.

Abstract: A media signal broadcasting method, a media signal broadcasting system, a host device and a peripheral device are provided. The media signal broadcasting method is provided. The media signal broadcasting method includes the following steps. A host device and a peripheral device are provided. A first radio signal is received by the peripheral device. The first radio signal is converted to be a second radio signal by the peripheral device. The second radio signal is transmitted to the host device by the peripheral device. The second radio signal is received and is converted to be a media signal by the host device. A third radio signal is received and converted to be the media signal by the host device. The media signal converted from the third radio signal or the second radio signal is played by the host device.

Abstract: A method for controlling transmission power of a wireless device is provided. A WiFi link is established to a communication device. A data rate of data packets transmitted to the communication device is monitored. Information from the communication device is obtained in response to the transmitted data packets. A transmission power of the wireless device is decreased when the data rate of the data packets reaches a highest data rate and the first information satisfies a specific condition.

Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.

Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

Abstract: A composition includes polymer and dispersed infrared-reflective clusters of titanium dioxide primary particles. The titanium dioxide primary particles are cemented together with precipitated silica and/or alumina to form clusters. The titanium dioxide primary particles have an average particle diameter in the range of from about 0.15 to about 0.35 micron, while the clusters of titanium dioxide primary particles have an average cluster diameter in the range of from about 0.38 to about 5 microns and a geometric standard deviation (GSD) in the range of from about 1.55 to about 2.5.

Abstract: The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.

Abstract: A method for controlling transmission power of a wireless device is provided. A WiFi link is established to a communication device. A data rate of data packets transmitted to the communication device is monitored. Information from the communication device is obtained in response to the transmitted data packets. A transmission power of the wireless device is decreased when the data rate of the data packets reaches a highest data rate and the first information satisfies a specific condition.

Abstract: A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.

Abstract: A method for controlling transmission power of a wireless device is provided. A WiFi link is established to a communication device. A data rate of data packets transmitted to the communication device is monitored. Information from the communication device is obtained in response to the transmitted data packets. A transmission power of the wireless device is decreased when the data rate of the data packets reaches a highest data rate and the first information satisfies a specific condition.

Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.