Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: An optical measurement system is provided, which includes a light source device, a fiber module, an optical detection device and a processing circuit. The light source device is configured to generate light to illuminate a target tissue area and a reference tissue area of a human body. The fiber module is configured to direct and transmit the light to illuminate the target tissue area and the reference tissue area and receive response beams from the target tissue area and the reference tissue area. The optical detection device is configured to detect the response beams from the target tissue area to obtain the target spectrum signal and detect the response beams from the reference tissue area to obtain a reference spectrum signal. The processing circuit configured to calculate a health status parameter of the target tissue area according to the target spectrum signal and reference spectrum signal.

Abstract: A 3D printing apparatus including a tank, a print platform, a motor, a force sensor, and a controller is provided. The tank is configured to accommodate a photocurable resin. The print platform is arranged adjacent to the tank. The motor is mechanically connected to the print platform. The motor is configured to drive the print platform to move. The force sensor includes a position encoder. The controller is electrically connected to the force sensor and the motor. The controller is configured to confirm whether the print platform is configured to reach a target position through a value of the position encoder.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: A solid dosage component detection method for a solid dosage component measurement device comprises generating a transmitting electromagnetic wave with a terahertz frequency and emitting to a solid dosage component; detecting a receiving electromagnetic wave with a terahertz frequency through the solid dosage component; comparing the transmitting electromagnetic wave incident on the solid dosage component with the receiving electromagnetic wave received from the solid dosage component to detect a plurality of signal characteristics differences between the transmitting and receiving electromagnetic waves; and discriminating polymorphism of a testing pharmaceutical in the solid dosage component, calculating a concentration of the testing pharmaceutical in the solid dosage component, and analyzing a coating layer thickness and a porosity of the solid dosage component based on the plurality of signal characteristics differences.

Abstract: The present invention provides a control method of the flash memory controller. In the control method, by establishing a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command from the host device, the flash memory controller can efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone. In addition, after receiving the reset command from the host device, the flash memory controller can use a garbage collection operation or directly put the blocks corresponding to the erased zone into a spare block pool, for the further use.

Abstract: The present invention provides a control method of the flash memory controller. In the control method, by establishing a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command from the host device, the flash memory controller can efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone. In addition, after receiving the reset command from the host device, the flash memory controller can use a garbage collection operation or directly put the blocks corresponding to the erased zone into a spare block pool, for the further use.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: An electronic device and its force touch assembly are provided. The force touch assembly includes a first substrate, a second substrate, a first patterned conductive layer, an insulation layer, a second patterned conductive layer, a plurality of variable pressure sensitive materials and a third patterned conductive layer, wherein the first patterned conductive layer, the insulation layer, the second patterned conductive layer, the plurality of variable pressure sensitive materials and the third patterned conductive layer are sequentially stacked from top to bottom between the first substrate and the second substrate.

Abstract: A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: A touchpad device is provided in the disclosure. The touchpad device includes a touch circuit board, at least two pressure detecting elements, a touch control unit, and a pressure control unit. The touch circuit board includes a touchable zone. The at least two pressure detecting elements are located below the touch circuit board and correspond to at least one pressure sensitive input region in the touchable zone. The touch control unit is electrically connected to the touch circuit board and is configured to receive and process a touch signal from the touch circuit board to generate touch coordinate information. The pressure control unit is electrically connected to the pressure detecting elements and is configured to receive and process a pressure signal detected by the pressure detecting elements in the pressure sensitive input region to generate touch pressure information.