Abstract: A system module applied to the machine controller for simulating a machine operation screen based on a non-invasive data-extraction system, is disclosed. An image capture device of the system module can receive an original operation screen outputted from the machine controller, and transmit the original operation screen to the non-invasive data-extraction system and a high-speed image process unit for extraction of the information shown on the operation screen. The software control system can extract the operational information of the machine controller in real time, to create a machine operation flow for generating a simulated machine operation screen which is then outputted to a screen of the machine controller. As a result, the site working staff can be provided with operational information associated with the machine in real time, for example, the operational information includes currently executed operation screen, position of mouse cursor and pop-up window detection result.

Abstract: A rail-type organic light emitting diode lamp assembly is provided. The lamp assembly includes a lamp module, an annular member, a connector, a conductive member, and a rail module. The annular member includes a protrusion portion having a pair of indentations. The connector is connected to the annular member, and includes a through hole, a first end provided with a pair of ears and a second end provided with a pair of hooks. The conductive member is provided in the through hole and has a first end in contact with the annular conductive coil. The rail module is connected with the connector and includes a conductor in contact with a second end of the conductive member. The connector can be slidably hooked to the rail module through the hooks, and after the ears are inserted into the indentations, the annular member can be rotatable with respect to the connector.

Abstract: A light sensor, for sensing an illumination of a partial area, includes a first case, a second case, a first light absorption layer and at least one sensing module. The first case includes at least one hole. The at least one hole includes an axis. The second case is fastened to the first case, and a containing space is formed between the first case and the second case. The first light absorption layer is located on the first case. The at least one sensing module is located in the containing space, and the position of the at least one sensing module is located on the axis of the hole. The at least one sensing module is used for sensing the light from the partial area which passes through the hole to obtain the illumination of the partial area.

Abstract: The present invention provides a method of forming a metal layer on a specific photosensitive resin. The method comprises the following steps: (i) pretreatment: cleaning and pre-activating a surface of the photosensitive resin by using an alkaline solution; (ii) surface modification: soaking the photosensitive resin in a surface modifier to form an organic modification layer; (iii) surface activation: adding catalytic metal ions to form a metal ion complex with the organic modification layer; (iv) reduction reaction: reducing the metal ion complex into a nano metal catalyst by using a reducing agent; (v) chemical plating: soaking the photosensitive resin in an chemical plating solution to form a conductive metal layer; (vi) heat treatment: baking the photosensitive resin at 100-250° C., and (vii) electroplating thickening: electroplating the baked photosensitive resin to thicken the conductive metal layer.

Abstract: A method for an improved 3-D printing system and a system thereof is disclosed. The method is able to blur and sharpen pattern images, and the system is flexible in assembly in order to benefit the convenience of printing, the speed of printing, and the cost of hardware and manufacturing.

Abstract: A semiconductor device includes an interfacial layer on a substrate and agate structure on the interfacial layer. Preferably, the gate structure includes a patterned high-k dielectric layer, the patterned high-k dielectric layer comprises a metal oxide layer, and a horizontal direction width of the patterned high-k dielectric layer and a horizontal direction width of the interfacial layer are different. The semiconductor device also includes a first spacer adjacent to the gate structure and on part of the interfacial layer and contacting a top surface of the interfacial layer and a second spacer on the sidewalls of the first spacer and the interfacial layer. Preferably, a planar bottom surface of the second spacer is lower than a planar bottom surface of the first spacer and extending along a same direction as the planar bottom surface of the first spacer.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A stylus pen includes a body, a conductive element, and a cap. The conductive element is disposed at one end of the body and has at least one through hole. The cap embedded in the through hole covers a portion of the conductive element away from the body. The stylus pen simulates the writing experience of a general pen. In addition, the abrasion of the stylus pen caused by long time writing can also be reduced. Moreover, the conductive portion inside the active stylus pen can be located closer to the touch panel.

Abstract: An example of the invention provides an electronic device. The electronic device includes a camera module, a control unit and a computing unit. The control unit controls the camera module to acquire a first image and a second image. The computing unit receives the first image and the second image to generate a third image, wherein the resolution of the third image is greater than the resolution of the first image and the resolution of the second image.

Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A bristle band with different types of bristles is provided. The bristle band winds around a rotating shaft and is driven by the rotating shaft to rotate. The bristle band includes: a cord having a receiving slot; a first bristle having a portion disposed in the receiving slot and fixedly connected to the cord; and a second bristle having a portion disposed in the receiving slot and fixedly connected to the cord. With the first bristle and the second bristle being disposed in the cord and a rotating shaft rotating at a constant rotation speed, the bristles passing a cleaning target come in more types than ever, thereby enhancing cleaning efficiency.

Abstract: A semiconductor process includes the following step. A metal gate strip and a cap layer are sequentially formed in a trench of a dielectric layer. The cap layer and the metal gate strip are cut off to form a plurality of caps on a plurality of metal gates, and a gap isolates adjacent caps and adjacent metal gates. An isolation material fills in the gap. The present invention also provides semiconductor structures formed by said semiconductor process. For example, the semiconductor structure includes a plurality of stacked structures in a trench of a dielectric layer, where each of the stacked structures includes a metal gate and a cap on the metal gate, where an isolation slot isolates and contacts adjacent stacked structures at end to end, and the isolation slot has same level as the stacked structures.

Abstract: The present invention provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first transistor and a second transistor. The first transistor and the second transistor are disposed on the substrate. The first transistor includes a first channel and a first work function layer. The second transistor includes a second channel and a second work function layer, where the first channel and the second channel include different dopants, and the second work function layer and the first work function layer have a same conductive type and different thicknesses.

Abstract: A brush container includes a box and two support members. The box has a U-shaped frame with two ends each having an end cover; hence, a storage space for containing a brush is defined between the U-shaped frame and two end covers. An upper cover for sealing the storage space is disposed on the top surface of the U-shaped frame. The U-shaped frame has an inner panel, an outer panel corresponding in position to the inner panel, and rib panels disposed between the inner and outer panels to allow a hollowed-out region to be defined between the inner and outer panels and two adjacent rib panels. Hence, despite being lightweight, the box has high structural strength. The two support members are slidably disposed in the storage space. Since their positions are adjustable according to the length of the brush, the two support members provide optimal support to the brush.

Abstract: The present invention provides a method of forming a semiconductor device. First, a substrate having a first insulating layer formed thereon is provided. After forming an oxide semiconductor layer on the first insulating layer, two source/drain regions are formed on the oxide semiconductor layer. A bottom oxide layer is formed to entirely cover the source/drain regions, following by forming a high-k dielectric layer on the bottom oxide layer.

Abstract: A surge-protection circuit for a chip is provided. The surge-protection circuit includes a detection element and a protection element. The detection element is embedded on the chip and arranged between a first terminal and a second terminal, and the detection element is utilized to detect whether an abrupt voltage variation occurs due to a surge or not and generate an enabling signal when the abrupt voltage variation occurs. The protection element is embedded on the chip and coupled to the detection element, and the protection element is utilized to adjust and reduce the abrupt voltage variation through bypassing high energy generated by the surge after receiving the enabling signal.

Abstract: The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device including a substrate, an oxide semiconductor layer, two source/drain regions, a high-k dielectric layer and a bottom oxide layer. The oxide semiconductor layer is disposed on a first insulating layer disposed on the substrate. The source/drain regions are disposed on the oxide semiconductor layer. The high-k dielectric layer covers the oxide semiconductor layer and the source structure and the drain regions. The bottom oxide layer is disposed between the high-k dielectric layer and the source/drain regions, wherein the bottom oxide layer covers the source/drain regions and the oxide semiconductor layer.

Abstract: A rail-type organic light emitting diode lamp assembly is provided. The lamp assembly includes a lamp module, an annular member, a connector, a conductive member, and a rail module. The annular member includes a protrusion portion having a pair of indentations. The connector is connected to the annular member, and includes a through hole, a first end provided with a pair of ears and a second end provided with a pair of hooks. The conductive member is provided in the through hole and has a first end in contact with the annular conductive coil. The rail module is connected with the connector and includes a conductor in contact with a second end of the conductive member. The connector can be slidably hooked to the rail module through the hooks, and after the ears are inserted into the indentations, the annular member can be rotatable with respect to the connector.

Abstract: In a backlight module, a diffusive structure and a prism structure are replaced by a diffusive prism film formed on a substrate and transferred via In-Mold Decoration by Roller (IMR) to a light guide body via injection molding. A reflection film is also transferred to an opposite side of the light guide body via the same way. In such way, optical films may be readily transferred to the light guide body via two-side IMR during the process of injection molding of the light guide body, saving room taken by substrates of the optical components.