Patents by Inventor Fuhong Zhang

Fuhong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210118729
    Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 22, 2021
    Inventors: Shirish PETHE, Fuhong ZHANG, Joung Joo LEE, Rui LI, Xiangjin XIE, Xianmin TANG
  • Publication number: 20210071294
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
  • Publication number: 20200357617
    Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Application
    Filed: June 24, 2020
    Publication date: November 12, 2020
    Inventors: Martin Lee RIKER, Fuhong ZHANG, Anthony INFANTE, Zheng WANG
  • Publication number: 20200350159
    Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.
    Type: Application
    Filed: January 25, 2020
    Publication date: November 5, 2020
    Inventors: Rui LI, Xiangjin XIE, Fuhong Zhang, Shirish PETHE, Adolph ALLEN, Lanlan Zhong, Xianmin TANG
  • Patent number: 10727033
    Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: July 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Martin Lee Riker, Fuhong Zhang, Anthony Infante, Zheng Wang
  • Publication number: 20200090957
    Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a shroud for controlling gas flow in a process chamber includes a closed walled body having an upper end and a lower end, the closed walled body defining a first opening of the shroud at the lower end and a second opening of the shroud at the upper end, wherein the second opening is offset from the first opening; and a top wall disposed atop a portion of the upper end of the closed walled body in a position above the first opening to define, together with a remaining portion of the upper end of the closed walled body, the second opening, wherein the shroud is configured to divert a gas flow from the second opening through the first opening.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 19, 2020
    Inventors: Jothilingam Ramalingam, Kirankumar Neelasandra Savandaiah, Fuhong Zhang, William Johanson
  • Publication number: 20200051795
    Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.
    Type: Application
    Filed: February 25, 2019
    Publication date: February 13, 2020
    Inventors: CHAO DU, YONG CAO, CHEN GONG, MINGDONG LI, FUHONG ZHANG, RONGJUN WANG, XIANMIN TANG
  • Publication number: 20200035527
    Abstract: Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.
    Type: Application
    Filed: October 3, 2019
    Publication date: January 30, 2020
    Inventors: Fuhong Zhang, Sunil Kumar Garg, Paul Kiely, Martin Lee Riker, William Fruchterman, Zheng Wang, Xiaodong Wang
  • Patent number: 10438828
    Abstract: Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: October 8, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Fuhong Zhang, Sunil Kumar Garg, Paul Kiely, Martin Lee Riker, William Fruchterman, Zheng Wang, Xiaodong Wang
  • Publication number: 20190279851
    Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Application
    Filed: May 30, 2019
    Publication date: September 12, 2019
    Inventors: Martin Lee RIKER, Fuhong ZHANG, Anthony INFANTE, Zheng WANG
  • Publication number: 20190259586
    Abstract: Embodiments of improved apparatus for maintaining low non-uniformity over the life of a target are provided herein. In some embodiments, an apparatus includes a substrate support within a volume of a chamber body, opposite a target assembly of a lid atop the chamber body, with a surface; a shield disposed within the chamber body comprising one or more sidewalls surrounding the volume, the shield extending downward to below a top surface of the substrate support, radially inward, and returning upward forming an extending lip; and a first ring having (i) a first portion comprising an opening having a ceramic isolator, disposed therein, resting on top of the extending lip, and (ii) a second portion extending away from the first portion toward the surface, wherein the substrate support, over a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the surface.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: WILLIAM JOHANSON, FUHONG ZHANG, YU Y. LIU, ADOLPH MILLER ALLEN
  • Patent number: 10347474
    Abstract: In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: July 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Martin Lee Riker, Fuhong Zhang, Anthony Infante, Zheng Wang
  • Patent number: 10283334
    Abstract: Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: William Johanson, Fuhong Zhang, Adolph Miller Allen, Yu Liu
  • Patent number: 10157733
    Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: December 18, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shouyin Zhang, Fuhong Zhang, Joung Joo Lee
  • Patent number: D837755
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: January 8, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Fuhong Zhang, Yu Liu
  • Patent number: D836572
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: December 25, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Fuhong Zhang, Xiaodong Wang
  • Patent number: D858468
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: September 3, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Lanlan Zhong, Fuhong Zhang, Zheng Wang
  • Patent number: D859333
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: September 10, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Lanlan Zhong, Fuhong Zhang, Zheng Wang
  • Patent number: D868124
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: November 26, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Fuhong Zhang, Zheng Wang
  • Patent number: D869409
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 10, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Fuhong Zhang, Xiaodong Wang