Abstract: A conductive line for a display device may include a first layer including aluminum (Al) or an aluminum alloy, a second layer disposed on the first layer, the second layer including titanium nitride (TiNx), and a third layer disposed on the second layer, the third layer including titanium (Ti) and having a multilayer structure including a plurality of stacked sub-layers.

Abstract: The present disclosure relates to an external member for home appliances and a manufacturing method therefor. The external member has through-holes in a metal layer for transmitting light emitted from a light source, such as a light-emitting device mounted rear of the external member, are not exposed to the outside by a film layer attached to a front surface of the metal layer when the light-emitting device is turned off. The external member for home appliances can provides appearance of home appliances with improved luxuriousness and aesthetic sensibility.

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Abstract: A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Abstract: The present disclosure describes an external member for home appliances and a manufacturing method therefor. The external member includes a metal layer that defines through-holes for transmitting light emitted from a light source including a light-emitting device mounted on a rear surface of the metal layer. The through-holes are not exposed to an outside by a film layer attached to a front surface of the metal layer when the light-emitting device is turned off. The external member for home appliances provides improved luxuriousness and aesthetic sensibility to the home appliances.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.

Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Abstract: A polarizing layer includes a substrate and a plurality of parallel wires disposed on the substrate. Each of the plurality of wires includes a base layer disposed on the substrate and an anti-reflective layer disposed on the base layer. The base layer includes aluminum or an aluminum alloy. The anti-reflective layer has a thickness within a range of 12 nm to 40 nm.

Abstract: An organic light-emitting diode display device includes a pixel electrode, a pixel-defining layer, an organic emission layer, and a counter electrode. The pixel-defining layer includes an opening partially exposing the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode opposes the pixel electrode. The pixel-defining layer includes a first pixel-defining layer and a second pixel-defining layer. The first pixel-defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel-defining layer is disposed on the first pixel-defining layer and includes an organic material. A sidewall of the first pixel-defining layer that is closest to the opening is aligned with a sidewall of the second pixel-defining layer that is closest to the opening.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: An OLED display device includes a substrate including a display region and a pad region, a display structure in the display region on the substrate, and a pad electrode structure in the pad region on the substrate, the pad electrode structure having a first pad electrode on the substrate, a first insulation layer covering opposite lateral portions of the first pad electrode and exposing a portion of an upper surface of the first pad electrode, a second pad electrode on the first pad electrode and on the first insulation layer, the second pad electrode having a step portion where the first pad electrode and the first insulation layer are overlapped, and a third pad electrode on the second pad electrode and on the first insulation layer, the third electrode covering the second pad electrode.

Abstract: A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 ?m, and each of the thicknesses of the first and second insulating layers is less than 1 ?m.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

Abstract: An OLED display device includes a substrate including a display region and a pad region, a display structure in the display region on the substrate, and a pad electrode structure in the pad region on the substrate, the pad electrode structure having a first pad electrode on the substrate, a first insulation layer covering opposite lateral portions of the first pad electrode and exposing a portion of an upper surface of the first pad electrode, a second pad electrode on the first pad electrode and on the first insulation layer, the second pad electrode having a step portion where the first pad electrode and the first insulation layer are overlapped, and a third pad electrode on the second pad electrode and on the first insulation layer, the third electrode covering the second pad electrode.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.