Abstract: Provided herein are compounds of Formula (I), and pharmaceutically acceptable salts, N-oxides, or solvates thereof, Also provided herein are pharmaceutical compositions comprising compounds of Formula (I) and methods of using compounds of Formula (I).

Abstract: An image processing apparatus and a method are provided. The apparatus comprises a plurality of processing modules configured to operate in series to refine a raw image captured by a camera, the modules comprising a first module and a second module, each of which independently implements a respective trained artificial intelligence model, wherein: the first module implements an image transformation operation that performs an operation from the set comprising: (i) an essentially pixel-level operation that increases sharpness of an image input to the module, (ii) an essentially pixel-level operation that decreases sharpness of an image input to the module, (iii) an essentially pixel-block-level operation on an image input to the module; and the second module as a whole implements a different operation from the said set.

Abstract: An item of content is received and it is analyzed to identify any different types of parsers that can be used to parse the item of content based on prior, user-selected parsers. One or more parsers is selected, based upon the content type in the item of content and based upon the prior, user-selected parsers. The selected parser is constructed in a server environment and is controlled to parse the item of content.

Abstract: Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

Abstract: Disclosed are a 3 dB orthogonal hybrid coupler, a radio-frequency front-end module and a communication terminal. The 3 dB orthogonal hybrid coupler can be arranged on a substrate, and a straight-through metal coil and a coupling metal coil are of a laminated structure, a coplanar structure or a combined form of the laminated structure and the coplanar structure, such that a corresponding radio-frequency signal input port is connected to a first radio-frequency signal output port, and an isolation port is connected to a second radio-frequency signal output port. Moreover, according to the requirements of the operating frequency and the port feature impedance of the 3 dB orthogonal hybrid coupler, the number of turns and the number of layers of the straight-through metal coil and the coupling metal coil are adjusted.

Abstract: A human antibody or an antigen-binding fragment which binds human IL-6 receptor (hIL-6R) with a KD of about 500 pM or less and blocks IL-6 activity with an IC50 of 200 pM or less, is provided. In preferred embodiments, the antibody the antibody or antigen-binding fragment binds hIL-6R with an affinity at least 2-fold higher relative to its binding monkey IL-6R.

Abstract: An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a first substrate, etching a frontside of the first substrate to form a first trench, depositing a fill layer in the first trench, removing a portion of the fill layer from the backside of the first substrate to form a second trench surrounded by the fill layer, and depositing a metal layer in the second trench to form the isolation structure.

Abstract: A special-figure design ribbon for connecting back contact cells includes a body, a plurality of first solder joints, and a plurality of second solder joints. The plurality of first solder joints and the plurality of second solder joints are respectively located on two sides of the body in a width direction. Each of the first solder joints stretches outward from a first side of the body. Each of the second solder joints stretches outward from a second side of the body. A shape of each first solder joint is different from a shape of each second solder joint. Center lines of at least one set of the first solder joint and the second solder joint adjacent to each other are staggered from each other in the width direction of the body.

Abstract: According to some aspects, a magnetic resonance imaging system capable of imaging a patient is provided. The magnetic resonance imaging system comprising at least one BO magnet to produce a magnetic field to contribute to a BO magnetic field for the magnetic resonance imaging system and a member configured to engage with a releasable securing mechanism of a radio frequency coil apparatus, the member attached to the magnetic resonance imaging system at a location so that, when the member is engaged with the releasable securing mechanism of the radio frequency coil apparatus, the radio frequency coil apparatus is secured to the magnetic resonance imaging system substantially within an imaging region of the magnetic resonance imaging system.

Abstract: A pixel includes a semiconductor substrate that includes a floating diffusion region and a photodiode region. The pixel also includes, between a front surface of the semiconductor substrate and a back surface opposing the front surface: a first trench and a second trench adjacent to the first trench in a separation direction that is both (a) parallel to the front surface and (b) in a plane that is perpendicular to the front surface. Each of the first and second trench (a) is between the floating diffusion region and the photodiode region and (b) extends into the semiconductor substrate from the front surface. In the separation direction, a top average-separation between the first and second trench, at depths between the front surface and a first depth in the semiconductor substrate, exceeds a bottom average-separation between the first and second trench, at depths exceeding the first depth.

Abstract: An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically and electrically isolated by a deep trench isolation structure. In an embodiment, a method of forming the deep trench isolation structure includes receiving a workpiece comprising a first isolation structure formed in a front side of a substrate, forming a trench extending through the first isolation structure and the substrate, forming a dielectric liner to line the trench, depositing a conductive layer conformally over the workpiece after the forming of the dielectric liner, and depositing a dielectric fill layer over the conductive layer to fill the trench. A refractive index of the dielectric fill layer may be smaller than a refractive index of the conductive layer. The present disclosure also includes an alternative method for forming isolation structures at a back side of the substrate.

Abstract: The present invention relates to the technical field of bridges, and specifically discloses a bridge sling based on electrochemical detection on steel wire corrosion. By means of winding a steel wire bundle with a wrapping tape, and coating the wrapping tape with a shielding coating, the steel wire bundle and the shielding coating are electrically connected with positive and negative electrodes of a voltage test assembly respectively, so that simple and accurate detection on corrosion in the sling during service is realized, and the safety of the sling during the service is ensured.

Abstract: Bridged compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. wherein R2, R3 R4, R5 and R6 are defined herein.

Abstract: A pixel of an image sensor includes a semiconductor substrate having a front surface and a back surface opposing the front surface, a photodiode and floating diffusion (FD) region formed in the substrate along a first pixel axis parallel to the front surface and a transfer gate formed in the front surface of the substrate between the photodiode and the FD region. The transfer gate includes a planar gate on the front surface of the substrate, a vertical transfer gate extending into the substrate from the planar gate, the vertical transfer gate further including a trench and a layer of doped semiconductor material epitaxially grown on the sides and bottom of the trench. The semiconductor substrate and the epitaxial layer comprise a first conductive type, and the photodiode and the FD region comprise a second conductive type. An image sensor and method of forming the vertical transfer gate are disclosed.

Abstract: An image sensor includes an image sensor pixel array having pixels. Each pixel includes a continuous active region having a first portion and a second portion extending from the first portion. A photodiode, a reset transistor, a drive transistor, and a select transistor are formed in and over the first portion. The photodiode and the reset transistor define a floating diffusion region therebetween. A switch transistor is formed in and over the second portion and includes a first source/drain region and a second source/drain region. The first source/drain region is included in the floating diffusion region. The second source/drain region interfaces a doped region formed in the second region. The pixel also includes a gate structure disposed directly over the doped region. By controlling the switch transistor, the pixel may operate in a high conversion gain mode or a low conversion gain mode to accommodate different illumination or exposure conditions.

Abstract: Methods and apparatuses of the disclosure provide a framework including a customized running environment and an analysis engine unit that can use runtime information from the running environment to identify known or unknown attacks to smart contracts on any blockchains and protect the smart contracts against the attacks. This general-purpose framework has low runtime overhead, reduced difficulty of developing analysis engine units, and improved response speed for new attacks.

Abstract: An instant messaging system based on blockchain includes: a central node and at least two domain instant messaging servers. The central node includes a management node and a blockchain node. Information about a user is stored in the blockchain node. The at least two domain instant messaging servers correspond to at least two instant messaging applications, respectively. A method for implementing the instant messaging system is implemented at the central node, and includes performing, in response to a request from the domain instant messaging server, a corresponding operation or providing corresponding information about a user to the domain instant messaging server. The central node establishes a communication connection with a plurality of domain instant messaging servers, such that each domain instant messaging server can send respectively data to the central node to realize a data sharing, and an interaction between different domain instant messaging servers.

Abstract: An image processing method includes segmenting, by a cloud server and based on a zoom ratio of a high-definition image in a high-definition image library, a low-definition image of a small zoom ratio from a terminal to obtain a plurality of image blocks. For each image block, performing, by the cloud server, retrieval and matching in the high-definition image library to obtain one or more high-definition reference images, and then performing, by the cloud server, image quality improvement using an image enhancement network that is based on the high-definition reference images to obtain a plurality of high-definition image blocks. Finally, stitching, by the cloud server, the high-definition image blocks into a super-definition image with higher resolution and higher definition, and returning, by the cloud server, the super-definition image to the terminal.

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

Abstract: The disclosure provides an electrode structure of a back contact cell, a back contact cell, a back contact cell module, and a back contact cell system. The electrode structure includes: first fingers, configured to collect a first polarity region; second fingers, configured to collect a second polarity region; a first busbar, disposed on a side of the back contact cell close to a first edge and connected to the first fingers; first pad points; and first connection electrodes, respectively connected to the first busbar and the first pad points. A distance between each of the first pad points and the first edge is greater than a distance between the first busbar and the first edge. The electrode structure can improve the reliability, reduce the costs, increase the product yield, and ensure excellent photoelectric conversion efficiency.