Patents by Inventor Ge Yang

Ge Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7649762
    Abstract: Embodiments for an area efficient high performance memory cell comprising a transistor connected to one of a bit line and a bit line bar are disclosed.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: January 19, 2010
    Assignee: nVidia Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Charles Chew-Yuen Young
  • Patent number: 7643330
    Abstract: One embodiment of the present invention sets forth a synchronous two-port static random access memory (SRAM) design with the area efficiency of a one-port SRAM. By restricting both access ports to an edge-triggered, synchronous clocking regime, the internal timing of the SRAM can be optimized to allow high-performance double-pumped access to the SRAM storage cells. By double-pumping the SRAM storage cells, one read access and one write access are possible per clock cycle, allowing the SRAM to present two external ports, each capable of performing one transaction per clock cycle.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: January 5, 2010
    Assignee: NVIDIA Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Ethan A. Frazier, Charles Chew-Yuen Young
  • Patent number: 7626878
    Abstract: One embodiment of the present invention sets forth an active bit line charge keeper circuit for improving the reliability of a static random access memory (SRAM) circuit. The active bit line charge keeper circuit includes two sub-circuits, each disposed between bit line pairs within the SRAM circuit. The first sub-circuit mitigates residual state associated with over-developed read state on the bit lines. The second sub-circuit mitigates the effects of residual state associated with reading one value on a given pair of bit lines and subsequently writing a different value. By mitigating the effects of residual state within an SRAM circuit, higher reliability at a given performance level may be achieved.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: December 1, 2009
    Assignee: NVIDIA Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Ethan A. Frazier, Charles Chew-Yuen Young
  • Patent number: 7626871
    Abstract: One embodiment of the present invention sets forth a high-speed single-ended memory read circuit that overcomes performance limitations of conventional single ended memory read circuits. A bit line keeper control mechanism for the high-speed single-ended memory read circuit is disclosed that automatically configures the bit line keeper for high-speed operation or low-speed operation, based on the frequency of a system clock. In high-speed operation, the bit line keeper is disabled, thereby eliminating short-circuit currents related to the bit line keeper and increasing the read performance of the single-ended memory read circuit. In low-speed operation, the bit line keeper is periodically disabled by a timer circuit to enable efficient read or write operations. Subsequent to the read or write operation, the bit line keeper is enabled to preserve state on the bit lines. By selectively enabling the bit line keeper, high-speed performance is improved while preserving correct function at low speeds.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: December 1, 2009
    Assignee: NVIDIA Corporation
    Inventors: Ge Yang, Hwong-Kwo (Hank) Lin, Charles Chew-Yuen Young
  • Patent number: 7626854
    Abstract: One embodiment of the present invention sets forth a twelve transistor static random access memory storage cell that provides two write ports and three read ports. The write word line operates at twice the clock frequency. The write bit lines are differential to provide high-performance writes. Each read word line operates at the clock frequency. Single-ended read bit lines are used to provide read performance comparable to write performance. The resulting storage cell only requires four horizontal word lines and five vertical bit lines, enabling very dense, yet high-performance designs.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: December 1, 2009
    Assignee: NVIDIA Corporation
    Inventors: Ge Yang, Hwong-Kwo (Hank) Lin, Charles Chew-Yuen Young
  • Patent number: 7583126
    Abstract: An apparatus and method are provided for preventing a current leakage or direct current when a low voltage domain is powered down. Included is a voltage transition circuit connected between a low voltage domain and a high voltage domain. Such voltage transition circuit includes a circuit component for preventing a current leakage when the low voltage domain is powered down.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: September 1, 2009
    Assignee: NVIDIA Corporation
    Inventors: Ge Yang, Hwong-Kwo Lin, Charles Chew-Yuen Young
  • Patent number: 7504872
    Abstract: One embodiment of the present invention sets forth a set of three building block circuits for designing a flexible timing generator for an integrated circuit. The first and second building blocks include delay elements that may be customized and fine-tuned prior to fabrication. The third building block may be tuned prior to fabrication as well as after fabrication. The three building blocks may be incorporated into a modular architecture, enabling designers to easily generate well-characterized, flexible, generic timer circuits.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: March 17, 2009
    Assignee: NVIDIA Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Ethan A. Frazier, Charles Chew-Yuen Young
  • Publication number: 20090045847
    Abstract: One embodiment of the present invention sets forth a set of three building block circuits for designing a flexible timing generator for an integrated circuit. The first and second building blocks include delay elements that may be customized and fine-tuned prior to fabrication. The third building block may be tuned prior to fabrication as well as after fabrication. The three building blocks may be incorporated into a modular architecture, enabling designers to easily generate well-characterized, flexible, generic timer circuits.
    Type: Application
    Filed: August 13, 2007
    Publication date: February 19, 2009
    Inventors: Hwong-Kwo Lin, Ge Yang, Ethan A. Frazier, Charles Chew-Yuen Young
  • Patent number: 7492204
    Abstract: One embodiment of the present invention sets forth a set of three building block circuits for designing a flexible timing generator for an integrated circuit. The first and second building blocks include delay elements that may be customized and fine-tuned prior to fabrication. The third building block may be tuned prior to fabrication as well as after fabrication. The three building blocks may be incorporated into a modular architecture, enabling designers to easily generate well-characterized, flexible, generic timer circuits.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: February 17, 2009
    Assignee: NVIDIA Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Ethan A. Frazier, Charles Chew-Yuen Young
  • Patent number: 7463065
    Abstract: An apparatus includes a single-rail input connected to a low-voltage domain and a voltage-transition circuit connected to the single-rail input. The voltage-transition circuit is configured to convert a voltage of the low-voltage domain received via the single-rail input to a voltage of the high-voltage domain.
    Type: Grant
    Filed: November 13, 2006
    Date of Patent: December 9, 2008
    Assignee: NVIDIA Corporation
    Inventors: Hwong-Kwo Lin, Ge Yang, Charles Chew-Yuen Young
  • Publication number: 20080290935
    Abstract: An apparatus and method are provided for preventing a current leakage or direct current when a low voltage domain is powered down. Included is a voltage transition circuit connected between a low voltage domain and a high voltage domain. Such voltage transition circuit includes a circuit component for preventing a current leakage when the low voltage domain is powered down.
    Type: Application
    Filed: May 24, 2007
    Publication date: November 27, 2008
    Inventors: Ge Yang, Hwong-Kwo Lin, Charles Chew-Yuen Young
  • Publication number: 20080260592
    Abstract: A pipettor is provided of discretely adjusting the volume of fluid transferable by the pipettor in a pipetting operation. One or multiple piston assemblies, comprising pistons detached from the actuator of the pipettor, resilient members that urges the pistons toward initial positions, and independent adjusting mechanisms, such as slide-and-lock, facilitate discrete adjustments of the pipetting volume. The pipettor affords the operator to expediently adjust the pipetting volume, and to conveniently operate the pipettor using only one hand.
    Type: Application
    Filed: February 12, 2008
    Publication date: October 23, 2008
    Inventors: Zhenggang Yang, Ge Yang
  • Patent number: 7304508
    Abstract: Embodiments related to fast flip-flops are disclosed.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: December 4, 2007
    Inventors: Ge Yang, Hank Lin, Charles Young
  • Patent number: 4917711
    Abstract: Novel adsorbents for use in the separation of carbon monoxide and/or unsaturated hydrocarbons from mixed gases.An adsorbent for separating carbon monoxide or unsaturated hydrocarbon from mixed gases is made by heating a solid mixture comprising a copper compound and a support having a high surface area in a suitable atmosphere.
    Type: Grant
    Filed: December 1, 1987
    Date of Patent: April 17, 1990
    Assignee: Peking University
    Inventors: Youchang Xie, Naiyu Bu, Jun Liu, Ge Yang, Jianguo Qiu, Naifang Yang, Youchi Tang