Abstract: Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Abstract: A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.

Abstract: An apparatus for providing a signal for transmission via a signal line includes a controller circuit having an output for a signal indicating whether the signal line is or will be in an inactive state and a switching circuit coupled to the controller circuit and having an output coupled to the signal line. The output is switched between different signal levels, if the signal indicates that the signal line is in an inactive state.

Abstract: Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

Abstract: A method of operating an integrated circuit involves supplying an instruction portion of a command to the integrated circuit to specify an operation to be performed by the integrated circuit. At least some types of commands also include an attributes portion that provides additional information about the operation to be performed. The attributes portion of the command is supplied to the integrated circuit with a delay relative to the instruction portion of the command. The integrated circuit selectively enables circuitry for processing the attributes portion if the integrated circuit determines from the received instruction portion that the command also includes an attributes portion. The delay between the two portions of the command provides sufficient time for the integrated circuit to enable the attributes processing circuitry, which, in a default state, can be disabled during an active mode of the integrated circuit to save power.

Abstract: A memory die, including a memory array, a memory array data terminal and a data bus that includes a first sub bus and a second sub bus is disclosed. A first bi-directional buffer arranged between the memory array data terminal and the first sub bus and a second bi-directional buffer arranged between the memory array data terminal and the second sub bus is also disclosed. The first and second bi-directional buffers are adapted to couple the first sub bus or the second sub bus to the memory array data terminal at a time.

Abstract: Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Abstract: An apparatus being connectable as a latch stage into a asynchronous latch chain comprises a reception interface, wherein upon receipt of the first signal at the reception interface, the apparatus switches to one of the first power saving mode and a second power saving mode, depending on the second signal at the reception interface and wherein the apparatus offers a first power consumption and a first wake-up time in the first power saving mode, and a second power consumption and a second wake-up time in the second power saving mode.

Abstract: Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Abstract: A memory die, including a memory array, a memory array data terminal and a data bus that includes a first sub bus and a second sub bus is disclosed. A first bi-directional buffer arranged between the memory array data terminal and the first sub bus and a second bi-directional buffer arranged between the memory array data terminal and the second sub bus is also disclosed. The first and second bi-directional buffers are adapted to couple the first sub bus or the second sub bus to the memory array data terminal at a time.

Abstract: Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Abstract: Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

Abstract: Memory modules, computing systems, and methods of manufacturing memory modules are disclosed. In one embodiment, a memory module includes a substrate having a first side and a second side opposed to the first side. A plurality of pins is disposed on the first side of the substrate. A first plurality of memory chips are arranged in a first chip layer, the first chip layer overlying the second side of the substrate. Electrical contacts of the first plurality of memory chips are electrically coupled to the pins. A second plurality of memory chips is arranged in a second chip layer, the second chip layer overlying the first chip layer. Electrical contacts of the second plurality of memory chips are electrically coupled to the pins.

Abstract: A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.

Abstract: A buffer component for a memory module having a plurality of memory components includes item of access information in accordance with a data transmission protocol, the address, clock, control and command signals depending on the access information, a second data interface for driving a clock signal and address and command signals to the plurality of memory components and for driving a control signal to a group of the plurality of memory components in accordance with a signaling protocol, wherein an activation of the memory components and an acceptance of the address and command signals are effected in a manner dependent on the control signals, and a control unit which applies the address and command signals to the plurality of memory components during a first clock period of the clock signal and applies the control signal for activating the group of the plurality of memory components to the group of the plurality of memory components to be activated when address and command signals are present, in a succeedin

Abstract: A method of operating an integrated circuit involves supplying an instruction portion of a command to the integrated circuit to specify an operation to be performed by the integrated circuit. At least some types of commands also include an attributes portion that provides additional information about the operation to be performed. The attributes portion of the command is supplied to the integrated circuit with a delay relative to the instruction portion of the command. The integrated circuit selectively enables circuitry for processing the attributes portion if the integrated circuit determines from the received instruction portion that the command also includes an attributes portion. The delay between the two portions of the command provides sufficient time for the integrated circuit to enable the attributes processing circuitry, which, in a default state, can be disabled during an active mode of the integrated circuit to save power.

Abstract: Methods and apparatus for setting various terminations of a memory chip. The memory chip includes a terminal, a termination circuit that can be connected to the terminal in order to terminate the terminal with a settable resistance value, a control command port for receiving a control command signal, and a control circuit that is connected to the termination circuit in order to set a resistance value as a function of a received control command signal.

Abstract: A method is provided for adapting the phase relationship between a clock signal and a strobe signal for accepting write data to be transmitted into a memory circuit, a write command signal being transmitted to the memory circuit in a manner synchronized with the clock signal, a write data signal being transmitted synchronously with the strobe signal, a phase offset between the transmitted clock signal and the transmitted strobe signal being set such that the write data are reliably accepted in the memory circuit.

Abstract: A buffer chip having a first data interface for receiving a data item which is to be written and for sending a data item which has been read, having a conversion unit for parallelizing the received data item and for serializing the data item which is to be sent, having a second data interface for writing the parallelized data item to a memory arrangement via a memory data bus and for receiving the data item read from the memory arrangement via the memory data bus; having a write buffer storage for buffer-storing the data item which is to be written, having a control unit in order, after reception of a data item which is to be written via the first data interface in line with a write command, to interrupt the data from being written from the write buffer storage via the second data interface upon a subsequent read command.

Abstract: An integrated semiconductor memory capable of determining a chip temperature includes first control terminals for driving the integrated semiconductor memory with first control signals for performing a write access and second control terminals provided for performing a read access. The integrated semiconductor further includes a control circuit for controlling a write and read access. A temperature sensor for recording a chip temperature of the integrated semiconductor memory is connected to the control circuit. The control circuit is configured to generate a state of a third control signal at one of the first or at one of the second control terminals in a manner dependent on a temperature recorded by the temperature sensor.