Abstract: A method for combining logic-based circuit units and memory-based circuit units in a common circuit arrangement is provided. The different supply voltage swings are fed to the different units wherein a signal voltage swing at a connection line between the memory-based circuit unit and the logic-based circuit unit is adjusted such that in the case of logic-based circuit units the signal voltage swing is provided in the range between a signal voltage minimum value of 0.4V and a signal voltage maximum value of 0.8V.

Abstract: The memory device has series-connected ferroelectric memory cells in which a series circuit composed of a resistor and/or of a transistor for the ferroelectric capacitor of a respective memory cell is present. As a result, without unacceptably increasing the access time, the interference pulses at the ferroelectric capacitors of the memory cells which are not being addressed at that particular time and which are generated by the reading out or writing of the addressed memory cell are reduced in such a way that they have virtually no further influence on the non-addressed memory cells.

Abstract: A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.

Abstract: The invention relates to a memory device comprising numerous memory cells, each cell comprising at least one selection transistor and one stacked capacitor and driven via word and bit lines. This memory device comprises two metallized sheets through which the bit line is led and between which the memory cell stacked capacitor is arranged.

Abstract: In a configuration for data transmission in a semiconductor memory system, in which data are transmitted between at least one semiconductor memory module and a memory controller controlled by a system clock signal, additional sense clock signal lines are led between the memory controller and the memory modules and, via loops on the memory modules, are led back directly from the memory modules to the memory controller component. By transmitting a sense clock signal from the memory controller to each of the memory modules via the additional sense clock signal lines, the memory controller is able to measure the respective signal propagation time of the sense clock signal and adjust a delay time for the data signals respectively received from the memory modules appropriately. The use of a data strobe signal and the associated disadvantages when testing the memory system or the memory modules is rendered superfluous.

Abstract: The data processing system has configurable components, which each have a configuration register for storing configuration data. A serial bus couples the configuration registers to a non-volatile memory so that a serial transmission of data from the non-volatile memory to the configuration registers is made possible, for example when the system is booted up. The system already functions even if complex bus systems, such as extensively parallel high-speed buses, for example, are not yet available in a configuration process of the system. The system can be used in all data processing systems, in particular in mobile applications.

Abstract: Before a write and/or read access to one of the memory cells is carried out, a security information stored in a security memory cell is read out. If the security information is characterized by a first logic state an error signal is generated. If the read-out security information is characterized by a second logic state the memory cell is accessed and a write access is carried out to the security memory cell during which a new security information to be he stored having the second logic state is written to the cell.

Abstract: An electronic circuit has a driver circuit to drive a signal onto a signal line. The driver circuit contains a first switching device with a first forward resistance between a first supply voltage terminal and the signal line, and a second switching device with a second forward resistance between a second supply voltage terminal and the signal line. A control circuit is provided to generate a first and a second control signal to control the first and second switching devices in a first operating mode such that, depending on the signal which is to be driven, either the first switching device or the second switching device is through-connected. In a second operating mode, the first switching device and the second switching device are essentially through-connected with the aid of the first and second control signals so that the first and second forward resistances together form a terminating resistance.

Abstract: A ferroelectric transistor is disclosed which has two source/drain regions and a channel region disposed in between in a semiconductor substrate. A metallic intermediate layer is disposed on the surface of the channel region and forms a Schottky diode with the semiconductor substrate, and a ferroelectric layer and a gate electrode are disposed on its surface. The ferroelectric transistor is fabricated using steps appertaining to silicon process technology.

Abstract: An integrated memory has a multiplexer and a differential sense amplifier with a differential input. The differential sense amplifier is connected to three bit lines by the multiplexer. The multiplexer electrically connects the differential input of the sense amplifier to any two of the three bit lines connected to it respectively, in accordance with its activation.

Abstract: An integrated memory contains two normal read amplifiers and two first redundant read amplifiers. It also contains bit lines which are combined into at least two individually addressable normal columns, at least one of which from each normal column is connected to one of the normal read amplifiers. It also has first redundant bit lines which are combined into one individually addressable redundant column, at least one of which is connected to one of the redundant read amplifiers. The first redundant read amplifier and its redundant columns are provided for replacing the two normal read amplifiers and one of the normal columns.

Abstract: The present invention provides a method for combining logic-based circuit units (101) and memory-based circuit units (102) in a circuit arrangement, different supply voltage swings (111a, 111b) being provided, at least one supply voltage potential (103) for at least one logic-based circuit unit (101) being provided, at least one ground potential (107a) for the logic-based circuit unit (101) being provided, at least one supply voltage potential (103b) for at least one memory-based circuit unit being provided, at least one ground potential for the memory-based circuit unit being provided, a signal voltage swing (105) being set in such a way that both the logic-based circuit unit (101) and the memory-based circuit unit (102) can process the signal voltage swing in a manner dependent on the supply voltage swings (111a, 111b) set.

Abstract: A method for transmitting a data stream from a circuit unit to a memory cell array includes receiving the data stream and demultiplexing it in response to a control signal, thereby dividing the data stream into a storage data stream and a mask data stream. The storage data stream is then buffered into a register unit, where it is divided into data stream components buffered in corresponding data register components on the basis of a clock signal and an address signal provided to the register unit. Meanwhile, the mask data stream is buffered in a mask register of the register unit. A composite data stream is then formed by combining selected data stream components in response to information provided by a data mask unit from the mask data stream buffered in the mask register. Data corresponding to this composite data stream is then provided to the memory cell array for storage therein.

Abstract: The integrated memory has driver units DRVi, via which the column select lines CSLi are connected to the plate line segments PLi and which, as a function of the potential of the associated column select lines CSLi and the word addresses RADR on the plate line segments PLi connected to them, generate potentials which have defined values for each operating state of the memory.

Abstract: The invention provides a method. In a first step of a method for fabricating a ferroelectric memory configuration, there is provided a substrate having a multiplicity of memory cells. Each of the memory cells has at least one select transistor, at least one short-circuit transistor, and at least one ferroelectric capacitor. The transistors are connected in an electrically conductive manner to a first of the electrodes of the ferroelectric capacitor. In the next step, at least one electrically insulating layer is applied. In the next step, at least one contact hole for connecting a second electrode of the ferroelectric capacitors is produced. Next, contact holes for connecting the short-circuit transistors are produced. Next, the contact holes are filled with electrically conductive material. Next, an electrically conductive layer is applied and patterned, so that the second electrodes of the ferroelectric capacitors are each conductively connected to the short-circuit transistors.

Abstract: The memory has identically constructed memory cells and reference cells. An item of reference information is written into the reference cells by uncoupling the reference cells from the read amplifiers via first switching elements, and by electrically connecting the part of the bit lines that is connected to the reference cells via second switching elements to a potential line carrying the reference information.

Abstract: A decoder element is provided with an output, whereby an output signal with one of three different possible potentials is produced. The output signal may have a value of either a first potential, a second potential, and a third potential, where the second potential lies between the first potential and the third potential. The output signal is produced according to voltage values of input signals at terminal connections of the decoder element.

Abstract: A semiconductor circuit is disclosed which contains a driving circuit which is integrated into a semiconductor substrate of a first conductivity type and includes positive voltage switching transistors for switching positive and/or zero voltage levels and negative switching transistors for switching negative and/or zero voltage levels. In addition, the driving circuit contains a control circuit which is positioned upstream from the driving circuit and is also embodied in the semiconductor substrate, which is connected to a substrate voltage. A negative voltage switching transistor of the driving circuit is configured inside an outer well which is embedded in the semiconductor substrate and is of a second conductivity type which is opposite to the first, and the outer well is connected to a supply voltage.

Abstract: A charge pump has two inputs, each for an input clock signal, and an output for the output of a pumped output potential. Two pumping capacitors are connected to the inputs. Second electrodes of the pumping capacitors are in each case connected via a first circuit module to a supply potential (ground) and via a second circuit module to the output. Also present is a controllable short-circuiting element, the controllable path of which is disposed between the second electrodes of the two pumping capacitors.

Abstract: An integrated memory has two first switching elements, which respectively connect a bit line of a first bit line pair to a bit line of a second bit line pair. In addition, the integrated memory has two second switching elements, which respectively connect one of the reference cells of one bit line pair to that bit line of the other bit line pair which is not connected via the corresponding first switching element to the bit line assigned to this reference cell. Information is written back to the reference cells via the sense amplifiers. A method of operating the integrated memory is also provided.