Abstract: The invention relates to a buffer component for a memory module having a plurality of memory components, comprising a first data interface for receiving an item of access information in accordance with a data transmission protocol, the address, clock, control and command signals depending on the access information, a second data interface for driving a clock signal and address and command signals to the plurality of memory components and for driving a control signal to a group of the plurality of memory components in accordance with a signaling protocol, wherein an activation of the memory components and an acceptance of the address and command signals are effected in a manner dependent on the control signals, and a control unit which applies the address and command signals to the plurality of memory components during a first clock period of the clock signal and applies the control signal for activating the group of the plurality of memory components to the group of the plurality of memory components to be ac

Abstract: In a memory module for a memory configuration having a bus system made up of a plurality of signal lines, each signal line has respectively been produced essentially without any stub continuously from a supplying contact device to a discharging contact device, disposed close to the supplying contact device, in order to increase a maximum data transmission rate within the memory configuration. Between the supplying contact device and the discharging contact device, each of the signal lines is routed in succession at minimum distances via connection elements associated with the signal line on memory chips associated with the signal line.

Abstract: A circuit exhibits a signal input, means for determining a reference level on the basis of properties of a signal received at the signal input. In addition, the circuit further exhibits means for evaluating the signal on the basis of the reference level.

Abstract: A data transmission system, particularly as part of a DDR-III memory chip communication circuit, performs a data transmission operation without preamble. The data transmission system includes at least one data line with an on die termination that can be turned on and turned off, and the chip end of the data line is connected to a positive or to a less positive, grounded, or negative supply voltage line by a pull-up or pull-down resistor. Alternatively, a data transmission system is operated with a timing by which the termination circuits to be turned on for respective operating state are not turned on until the drivers to be activated for the respective operating state have been activated.

Abstract: Interface parameters for a plurality of semiconductor devices, particularly parameters for output drivers (i.e. on chip driver) and terminations (i.e. on die termination) for double data rate dynamic random access memories, are aligned using a calibration reference which is common to the semiconductor devices and is connected to calibration connections on the semiconductor devices. The semiconductor devices are calibrated in succession, in each case individually, and the calibration connection on the respective semiconductor device which is currently performing calibration is connected to an internal calibration unit by an internal switching unit in the process, and the calibration connections on all other semiconductor devices are terminated to a high impedance internally.

Abstract: An integrated circuit which is integrated in a housing having connecting pins fitted to the housing for connecting the housing to signal lines of an external circuit, each connecting pin connected by an associated wiring line to a contact pad of the circuit integrated in the housing, to exchange signals between the external circuit and the integrated circuit, where to minimize the line lengths of the associated wiring lines, the connecting pins to be connected to signal lines for high-frequency signals are fitted centrally to the housing.

Abstract: The state of a ferroelectric transistor in a memory cell is read or stored, and the threshold voltage of further ferroelectric transistors in further memory cells in the memory matrix is increased during the reading or storing, or is increased permanently. A memory configuration including ferroelectric memory cells is also provided.

Abstract: The present invention relates to a memory arrangement having a controller and having at least one memory device. Data signals, control signals and address signals can be transferred between the controller and the memory device. The memory arrangement is designed in such a way that the data signals can be transferred via data signal lines between the controller and the memory device. The memory arrangement is furthermore designed in such a way that the control signals and the address signals can likewise be transferred via the data signal lines between the controller and the memory device.

Abstract: A supply voltage is needed in conventional electronic circuits used for processing signals, such as counting pulses. The supply voltage supplies the logic circuit components. Especially apparatuses which have to be operated over a longer period of time or/and in remote sites of use and are dependent upon a supply voltage are impaired with the dependency-related disadvantages, such as the necessity of expensive EEPROMs or significantly increased maintenance expenditure.

Abstract: A method, system and protocol for a synchronous memory system. One embodiment of a system comprises: a memory control device; one or more memory modules in a main memory, with each memory module comprising one or more memory banks; a transfer bus for communication between the memory control device and the memory modules, where the transfer bus is in the form of a concatenated bus structure and comprises a plurality of parallel transfer lines; and where the memory control device is designed to generate commands comprising a plurality of command segments with a respective plurality of elements, and to transfer them to the memory modules using the transfer bus. The transfer bus is configured to transfer the elements of a command segment in parallel, and the commands each comprise a selection command segment for selecting one or more memory banks, with each of the memory banks having at least one uniquely associated element of the selection command segment.

Abstract: A buffer chip for actuating one or more memory arrangements, having a first data interface for receiving a data item which is to be written and for sending a data item which has been read, having a conversion unit for parallelizing the received data item and for serializing the data item which is to be sent, having a second data interface for writing the parallelized data item to the memory arrangement via a memory data bus and for receiving the data item read from the memory arrangement via the memory data bus; having a write buffer storage for buffer-storing the data item which is to be written, having a control unit in order, after reception of a data item which is to be written via the first data interface in line with a write command, to interrupt the data from being written from the write buffer storage via the second data interface upon a subsequent read command, in order to read the requested data into the buffer chip via the second data interface.

Abstract: The data processing system has configurable components, which each have a configuration register for storing configuration data. A serial bus couples the configuration registers to a non-volatile memory so that a serial transmission of data from the non-volatile memory to the configuration registers is made possible, for example when the system is booted up. The system already functions even if complex bus systems, such as extensively parallel high-speed buses, for example, are not yet available in a configuration process of the system. The system can be used in all data processing systems, in particular in mobile applications.

Abstract: Methods and apparatus for allocating memory arrangement addresses to a buffer chip, during an initialization mode, for use in addressing one or more memory arrangements connected to the buffer chip are provided. A buffer circuit may receive first initialization data specifying a first set of available memory arrangement addresses and associate one or more of the first set of available memory arrangement addresses with the one or more memory arrangements connected to the buffer chip. The buffer circuit may also generate second initialization data specifying the set of available memory arrangement addresses available after the association. The second initialization data may be transmitted to another buffer circuit for use in address allocation or back to a memory access control unit.

Abstract: Memory modules based on DDR-DRAMs are provided with a buffer and error checking module, which integrates an error data memory and a buffer/redriver functionality for conditioning data signals that are transferred to the memory module and output from the memory module and is suitable for the correction of useful data stored erroneously in the DDR-DRAMs. The buffer and error checking module enables the integration of both error correction and buffer/redriver functionality on memory modules within the restricted memory module dimensions in accordance with definitive industry standards, simplified or improved routing of data lines and of control and address lines and also, by virtue of a reduction of erroneously transferred data to the data memory system, an increased real data transfer rate.

Abstract: Integrated circuit which is integrated in a housing and has a plurality of connecting pins fitted to the housing for connecting the housing to signal lines of an external circuit,

Abstract: An electronic circuit has a driver circuit to drive a signal onto a signal line. The driver circuit contains a first switching device with a first forward resistance between a first supply voltage terminal and the signal line, and a second switching device with a second forward resistance between a second supply voltage terminal and the signal line. A control circuit is provided to generate a first and a second control signal to control the first and second switching devices in a first operating mode such that, depending on the signal which is to be driven, either the first switching device or the second switching device is through-connected. In a second operating mode, the first switching device and the second switching device are essentially through-connected with the aid of the first and second control signals so that the first and second forward resistances together form a terminating resistance.

Abstract: A configuration for executing data processing processes has an operating system and various system resources that are accessed by the operating system using an access strategy for the execution of system processes. When there are different applications, different access strategies to the system resources are used. A method is also provided for determining the optimum access strategy to the system resources.

Abstract: In a memory module for a memory configuration having a bus system made up of a plurality of signal lines, each signal line has respectively been produced essentially without any stub continuously from a supplying contact device to a discharging contact device, disposed close to the supplying contact device, in order to increase a maximum data transmission rate within the memory configuration. Between the supplying contact device and the discharging contact device, each of the signal lines is routed in succession at minimum distances via connection elements associated with the signal line on memory chips associated with the signal line.

Abstract: Interface parameters for a plurality of semiconductor devices, particularly parameters for output drivers (i.e. on chip driver) and terminations (i.e. on die termination) for double data rate dynamic random access memories, are aligned using a calibration reference which is common to the semiconductor devices and is connected to calibration connections on the semiconductor devices. The semiconductor devices are calibrated in succession, in each case individually, and the calibration connection on the respective semiconductor device which is currently performing calibration is connected to an internal calibration unit by an internal switching unit in the process, and the calibration connections on all other semiconductor devices are terminated to a high impedance internally.

Abstract: In a configuration for data transmission in a semiconductor memory system, in which data are transmitted between at least one semiconductor memory module and a memory controller controlled by a system clock signal, additional sense clock signal lines are led between the memory controller and the memory modules and, via loops on the memory modules, are led back directly from the memory modules to the memory controller component. By transmitting a sense clock signal from the memory controller to each of the memory modules via the additional sense clock signal lines, the memory controller is able to measure the respective signal propagation time of the sense clock signal and adjust a delay time for the data signals respectively received from the memory modules appropriately. The use of a data strobe signal and the associated disadvantages when testing the memory system or the memory modules is rendered superfluous.