Abstract: Methods and apparatuses are provided for obtaining downlink or uplink signal characteristics of at least one access point in a network. The signal characteristics may be obtained through user equipment receiving the signal characteristics, through the at least one access point, or through another access point. Frequency or timing offset between two or more access points may be determined based on the obtained signal characteristics, where the frequency or timing offset may be handled through post processing. For example, a clock servo may be controlled or adjusted in response to the determined offset, the absolute frequency of a master network oscillator may be calibrated, traffic anomalies within the network may be detected and corrected, and/or respective clocks of the two or more access points may be synchronized.

Abstract: The present invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. More specifically, the invention provides quinazolines and quinolines which inhibit, regulate, and/or modulate kinase receptor, particularly c-Met, KDF, c-Kit, flt-3 and flt-4, signal transduction pathways related to the changes in cellular activities as mentioned above, compositions which contain these compounds, and methods of using them to treat kinase-dependent diseases and conditions. The present invention also provides methods for making compounds as mentioned above, and compositions which contain these compounds.

Abstract: A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate, a plurality of collector contacts disposed in a first side of the of the semiconductor substrate, an emitter contact layer disposed in a second side of the semiconductor substrate, and a base layer separating the plurality of collector contacts from the emitter contact layer. Each collector contact is electrically isolated from each other. A resistive sense memory cells is electrically coupled to each collector contacts and a bit line. The base layer and the emitter contact layer provide an electrical path for the plurality of collector contacts.

Abstract: A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.

Abstract: Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.

Abstract: The present invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. More specifically, the invention provides quinazolines and quinolines which inhibit, regulate, and/or modulate kinase receptor, particularly c-Met, KDF, c-Kit, flt-3 and flt-4, signal transduction pathways related to the changes in cellular activities as mentioned above, compositions which contain these compounds, and methods of using them to treat kinase-dependent diseases and conditions. The present invention also provides methods for making compounds as mentioned above, and compositions which contain these compounds.

Abstract: A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate, a plurality of collector contacts disposed in a first side of the of the semiconductor substrate, an emitter contact layer disposed in a second side of the semiconductor substrate, and a base layer separating the plurality of collector contacts from the emitter contact layer. Each collector contact is electrically isolated from each other. A resistive sense memory cells is electrically coupled to each collector contacts and a bit line. The base layer and the emitter contact layer provide an electrical path for the plurality of collector contacts.

Abstract: A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. Each pillar structure forms a vertical pillar transistor having a top surface and a side surface orthogonal to the top surface. Then a hardening species is implanted into the vertical pillar transistor top surface. Then the vertical pillar transistor side surface is oxidized to form a side surface oxide layer. The side surface oxide layer is removed to form vertical pillar transistor having rounded side surfaces.

Abstract: A memory array includes a base circuitry layer and a plurality of memory array layers stacked sequentially to form the memory array. Each memory array layer is electrically coupled to the base circuitry layer. Each memory array layer includes a plurality of memory units. Each memory unit includes a vertical pillar transistor electrically coupled to a memory cell.

Abstract: The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role.

Abstract: Disclosed are methods of treating cancer by administering a compound of Formula I, or a pharmaceutically acceptable salt thereof, in combination with gemcitabine (GEM), or a pharmaceutically acceptable salt thereof, and optionally one or more additional treatments, wherein: R1 is halo; R2 is halo; R3 is (C1-C6)alkyl; R4 is (C1-C6)alkyl; and Q is CH or N.

Abstract: A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically is connected to the bit contact. The source contact is more heavily implanted with dopant material then the bit contact.

Abstract: The present invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. More specifically, the invention provides quinazolines and quinolines which inhibit, regulate, and/or modulate kinase receptor, particularly c-Met, KDF, c-Kit, flt-3 and flt-4, signal transduction pathways related to the changes in cellular activities as mentioned above, compositions which contain these compounds, and methods of using them to treat kinase-dependent diseases and conditions. The present invention also provides methods for making compounds as mentioned above, and compositions which contain these compounds.

Abstract: Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.

Abstract: The present invention relates to compounds of the Formula (I) and (II) wherein R, R21, R25-R33, m, n, X21-X23, and Q1 are defined herein. The compounds modulate protein kinase enzymatic activity to modulate cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. Compounds of the invention inhibit, regulate and/or modulate kinases, particularly p70S6 and/or Akt kinases. Methods of using and preparing the compounds, and pharmaceutical compositions thereof, to treat kinase-dependent diseases and conditions are also an aspect of the invention.

Abstract: A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically is connected to the bit contact. The source contact is more heavily implanted with dopant material then the bit contact.

Abstract: The present invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. More specifically, the invention provides quinazolines and quinolines which inhibit, regulate, and/or modulate kinase receptor, particularly c-Met, KDF, c-Kit, flt-3 and flt-4, signal transduction pathways related to the changes in cellular activities as mentioned above, compositions which contain these compounds, and methods of using them to treat kinase-dependent diseases and conditions. The present invention also provides methods for making compounds as mentioned above, and compositions which contain these compounds.

Abstract: The present invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration and chemoinvasion. Compounds of the invention inhibit, regulate and/or modulate kinases, particularly Tie-2. Methods of using the compounds and pharmaceutical compositions thereof to treat kinase-dependent diseases and conditions are also an aspect of the invention.

Abstract: The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role.

Abstract: A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.