Abstract: A circuit includes at least one FET and at least one IGBT that have their load paths connected in parallel. A voltage limiting circuit is coupled to a gate terminal of the at least one IGBT.

Abstract: A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor. Each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors. One of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.

Abstract: A rectifier circuit with a synchronously controlled semiconductor element comprising at least one field effect transistor with a control electrode and two switching electrodes. The control electrode operates the reverse state and the forward state between the switching electrodes. For this, the rectifier circuit comprises at least one driver which cooperates with a voltage sensor of the field effect transistor. During the diode operating state of the field effect transistor, the driver operates this to the forward state. The voltage sensor thereby forms at least one part of a non-linear voltage divider which comprises at least one monolithically integrated measuring capacitance.

Abstract: A rectifier circuit with a synchronously controlled semiconductor element comprising at least one field effect transistor with a control electrode and two switching electrodes. The control electrode operates the reverse state and the forward state between the switching electrodes. For this, the rectifier circuit comprises at least one driver which cooperates with a voltage sensor of the field effect transistor. During the diode operating state of the field effect transistor, the driver operates this to the forward state. The voltage sensor thereby forms at least one part of a non-linear voltage divider which comprises at least one monolithically integrated measuring capacitance.

Abstract: A voltage converter and a voltage conversion method is disclosed. The voltage converter includes input terminals configured to receive an input voltage. Output terminals are configured to provide an output voltage and an output current. At least one first converter stage is connected between the input terminals and the output terminals, comprising at least one unipolar transistor, and configured to provide a first output current. At least one second converter stage is connected between the input terminals and the output terminals, comprising at least one bipolar transistor, and configured to provide a second output current. A control circuit is configured to control the first output current and the second output current such that there is a first output current range in which the first output current is higher than the second output current.

Abstract: A circuit arrangement, includes output terminals that provide an output current and input terminals that receive a source current and a source voltage from a DC current source. A maximum power point tracker is coupled between the input terminals and the output terminals and a bypass circuit is coupled between the input terminals and the output terminals. The bypass circuit is configured to enter a bypass state dependent on the output current and dependent on the source current. The source current flows through the bypass circuit in the bypass state.

Abstract: An active diode is disclosed. One embodiment provides a method for operating a device. The electronic device includes a transistor connected between a first and a second connection of the electronic device; a control device coupled to a control connection of the transistor; and an energy storage device coupled to the control device.

Abstract: A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

Abstract: A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Abstract: A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Abstract: A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.

Abstract: A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

Abstract: A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections.

Abstract: A semiconductor device arrangement and a method. One embodiment includes at least one power transistor and at least one gate resistor located between a gate of the power transistor and a connecting point in the drive circuit of the power transistor. The semiconductor device arrangement includes a switchable element between the connecting point and a source of the power transistor.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: A circuit for actuation of a transistor. One embodiment provides an actuation output for connection to the actuation connection of the transistor. A measurement arrangement is provided for ascertaining a load current flowing through the load path or a voltage across the load path and for providing a measurement signal. An actuation current source having an actuation current output is connected to the actuation output and supplied with the measurement signal and designed to produce an actuation current at the actuation current output. The actuation current is at a current level dependent on the measurement signal.

Abstract: A rectifier circuit with a synchronously controlled semiconductor element comprising at least one field effect transistor with a control electrode and two switching electrodes. The control electrode operates the reverse state and the forward state between the switching electrodes. For this, the rectifier circuit comprises at least one driver which cooperates with a voltage sensor of the field effect transistor. During the diode operating state of the field effect transistor, the driver operates this to the forward state. The voltage sensor thereby forms at least one part of a non-linear voltage divider which comprises at least one monolithically integrated measuring capacitance.

Abstract: A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit.

Abstract: A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Abstract: A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections.