Abstract: A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

Abstract: A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Abstract: A semiconductor device arrangement and a method. One embodiment includes at least one power transistor and at least one gate resistor located between a gate of the power transistor and a connecting point in the drive circuit of the power transistor. The semiconductor device arrangement includes a switchable element between the connecting point and a source of the power transistor.

Abstract: Embodiments of the invention relate to a circuit for an active diode, a method for operating an active diode, and, based thereon, an integrated active diode system, a rectifier, and a system for voltage conversion and/or regulation, comprising at least one transistor by which a current defined as positive from a first connection to a second connection of the transistor can be controlled, and at least one measuring/control circuit (for determining the current by means of which the at least one transistor can be switched on for currents under and at most up to a predetermined, non-positive threshold value (i1<=ith<=0), and can otherwise be switched off.

Abstract: An apparatus, comprising a transformer comprising a first winding and a second winding; a first switch coupled to the first winding and configured to alternate between an off state and an on state in response to a pulsed first signal; a rectifier coupled to the second winding and configured to alternate between an off state and an on state in response to a pulsed second signal; and a drive circuit configured to generate the first and second signals such that the first switch and the rectifier are switched to the on state in a temporally offset relation with each other.

Abstract: An active diode is disclosed. One embodiment provides a method for operating a device. The electronic device includes a transistor connected between a first and a second connection of the electronic device; a control device coupled to a control connection of the transistor; and an energy storage device coupled to the control device.

Abstract: A circuit arrangement comprises at least one power component and a drive circuit for the power component, which are integrated in a first and a second semiconductor chip. Only CMOS components of the drive circuit or CMOS components, capacitive components and resistance components of the drive circuit are integrated in the first semiconductor chip, and the at least one power component and further components of the drive circuit are integrated in the second semiconductor chip.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: In a resonance converter for driving variable loads at first an input signal provided by a switch controlled by control means is converted to an output signal by a transformer. The transformer is dimensioned and connected such that a downward transformation ratio between input signal and output signal is between 5:1 and 100:1 when providing nominal power to the variable load. The switching frequency of the switch is controlled on the basis of a phase shift between a switch current and a load current at variable load and/or variable input voltage, a quantity dependent on the input voltage, as well as a quantity dependent on the output voltage. The inventive resonance converter further enables driving variable loads efficiently with the aid of a transformer.

Abstract: A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.

Abstract: A semiconductor layer with laterally variable doping, and a method for producing it are disclosed. The trenches here are no longer filled up completely with doped semiconductor material. Instead, a doped balancing layer is deposited in a sense as a lining on the walls of the trenches. The doped balancing layer has a defined layer thickness that remains constant over an entire depth of the trenches. Furthermore, both a dopant concentration and the layer thickness of the balancing layer are adjusted such that a complete charge required for compensation is already contained in the balancing layer. The trenches here can advantageously have an arbitrarily great berm angle. The invention is especially advantageous in a peripheral region of semiconductor components with high depletion voltage strength.

Abstract: A circuit configuration has a load transistor and a current measuring configuration. A method ascertains a load current through a load transistor. The circuit configuration includes a first and a second current sensor with a current measuring transistor in each case. Each of the current sensors provide a current measurement signal that is fed to an evaluation circuit. The evaluation circuit provides, from the first current measurement signal, a current measurement signal that is dependent on the load current. The load transistor and the current measuring transistors are preferably integrated in a common semiconductor body having a multiplicity of transistor cells of identical construction. The evaluation circuit preferably accounts for the spatial position of the cells of the first and second current measuring transistors in the cell array.

Abstract: A circuit configuration has a load transistor and a current measuring configuration. A method ascertains a load current through a load transistor. The circuit configuration includes a first and a second current sensor with a current measuring transistor in each case. Each of the current sensors provide a current measurement signal that is fed to an evaluation circuit. The evaluation circuit provides, from the first current measurement signal, a current measurement signal that is dependent on the load current. The load transistor and the current measuring transistors are preferably integrated in a common semiconductor body having a multiplicity of transistor cells of identical construction. The evaluation circuit preferably accounts for the spatial position of the cells of the first and second current measuring transistors in the cell array.

Abstract: The invention relates to a semiconductor component, in which regions of the conduction type opposite to the conduction type of the drift zone are incorporated in the drift zone and also in the region of the active zones.

Abstract: The invention relates to a semiconductor component having a first semiconductor zone of a first conduction type, a second semiconductor zone of a second conduction type and a drift zone arranged between the first and second semiconductor zones, which drift zone has at least two semiconductor zones doped complementarily to one another, the degree of compensation varying at least in a section of the drift zone in a direction perpendicular to a current flow direction running between the first and second semiconductor zones.

Abstract: A circuit arrangement comprises at least one power component and a drive circuit for the power component, which are integrated in a first and a second semiconductor chip. Only CMOS components of the drive circuit or CMOS components, capacitive components and resistance components of the drive circuit are integrated in the first semiconductor chip, and the at least one power component and further components of the drive circuit are integrated in the second semiconductor chip.

Abstract: A circuit configuration is used for off-load switching. The circuit configuration can be used as a component in a switch mode power supply, a clocked supply, a voltage regulator, and a lamp switch, wherein the circuit configuration is embodied as an IGBT, especially a field stop IGBT or alternately and additionally as a PT IGBT. A method for using the circuit configuration include three operating modes: in a first operating mode, power for a load is modulated by pulse modulation; in a second operating mode, the power is modulated by changing a switching-on time; and, in a third operating mode, both are implemented.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: In a resonance converter for driving variable loads at first an input signal provided by a switch controlled by control means is converted to an output signal by a transformer. The transformer is dimensioned and connected such that a downward transformation ratio between input signal and output signal is between 5:1 and 100:1 when providing nominal power to the variable load. The switching frequency of the switch is controlled on the basis of a phase shift between a switch current and a load current at variable load and/or variable input voltage, a quantity dependent on the input voltage, as well as a quantity dependent on the output voltage. The inventive resonance converter further enables driving variable loads efficiently with the aid of a transformer.

Abstract: The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.