Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

Abstract: A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness.

Abstract: A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

Abstract: A method is provided for forming a semiconductor device containing a buried threshold voltage adjustment layer. The method includes providing a substrate containing an interface layer, depositing a first high-k film on the interface layer, depositing a threshold voltage adjustment layer on the first high-k film, and depositing a second high-k film on the threshold voltage adjustment layer such that the threshold voltage adjustment layer is interposed between the first and second high-k films. The semiconductor device containing a patterned gate stack is described.

Abstract: A method is provided for forming WSix gate electrode films with tunable Si/W atomic ratios, low oxygen and carbon film impurities, and work functions suitable for advanced semiconductor devices. The method includes providing a substrate containing a high-k film in a process chamber, maintaining the substrate at a temperature between 450° C. and 550° C., and performing a plurality of deposition cycles to form a WSix gate electrode film on the high-k film. According to embodiments of the invention, each deposition cycle includes exposing the substrate to a first process gas containing W(CO)6 vapor to thermally deposit a W metal film with a thickness between 0.1 nm and less than 2 nm, and exposing the W metal film to a second process gas containing SiH4 to form a WSix film having a Si/W atomic ratio controlled by self-limited Si incorporation into the W metal film. The method further includes patterning the WSix gate electrode film and high-k film to form a gate stack.

Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract: A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system is configured to be coupled to the process chamber of a thin film deposition system, and it includes a base tray with one or more stackable upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

Abstract: A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C.

Abstract: A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.

Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

Abstract: Apparatus and method of processing a substrate comprises positioning a substrate within a processing space of a processing chamber, and depositing a material layer, such as a titanium-containing layer, onto the substrate using plasma-enhanced chemical vapor deposition. The substrate is then removed from the processing chamber and the processing space is purged. A gas mixture containing oxygen is then introduced into the processing space and the gas mixture is excited with RF energy to form an oxygen-containing plasma. The oxygen-containing plasma is sustained for a predetermined amount of time in the processing space.

Abstract: An apparatus for depositing a film on a substrate utilizing a plasma-enhanced chemical vapor deposition process comprises a process chamber having an electrically grounded element therein and an RF biased electrode positioned in the process chamber proximate a substrate. An insulative element is coupled between the electrode and the grounded element other than the grounded substrates, and is formed of an electrically insulative material and has an insulative surface for effectively electrically isolating the electrode from the grounded element within the process chamber. The insulative element includes at least one feature formed in the insulative surface, wherein the feature has a high effective aspect ratio for inhibiting the deposition of a film therein to thereby create an electrical discontinuity in a film which may form on the insulative surface during the plasma-enhanced chemical vapor deposition process.

Abstract: A single chamber method for depositing a stack including titanium and titanium nitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressure are maintained at substantially constant values throughout deposition of the stack.