Patents by Inventor Ghavam G. Shahidi

Ghavam G. Shahidi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11496285
    Abstract: A method (and structure) includes receiving a challenge for an authentication, in a chip having stored in a memory device therein a secret to be used in an authentication attempt of the chip by an external agent. The chip includes a hardware processing circuit to sequentially perform a processing related to the secret. The secret is retrieved from the memory device and processed in the hardware processing circuit in accordance with information included in the received challenge. The result of the processing in the hardware processing circuit is transmitted as a response to the challenge. The hardware processing circuit executes in a parallel manner, thereby reducing a signal that can be detected by an adversary attempting a side channel attack to secure the secret.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: November 8, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Richard Harold Boivie, Daniel Joseph Friedman, Charanjit Singh Jutla, Ghavam G. Shahidi
  • Patent number: 11482573
    Abstract: A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: October 25, 2022
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Qinglong Li, Kunal Mukherjee, Devendra Sadana, Ghavam G. Shahidi
  • Patent number: 11411739
    Abstract: A processor-implemented method imposes trust at the edge of a blockchain. A hardware interrogator in a terminal interrogates an Internet of Things Smart Device (IoTSD). The IoTSD is an off-line device that is associated with a physical product. The IoTSD includes a cryptographic processor and one or more state sensors that monitor a state of the physical product. The hardware interrogator detects an event that is described by an encrypted entry in the IoTSD. The terminal transmits, to a blockchain, a transaction that describes the event that is detected by the hardware interrogator, such that the blockchain adds the transaction to a blockchain that is dedicated to the physical product, and the blockchain establishes a state of the physical product.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: August 9, 2022
    Assignee: Internatiional Business Machines Corporation
    Inventors: Frank R. Libsch, Seiji Munetoh, Abhilash Narendra, Ghavam G. Shahidi
  • Patent number: 11378545
    Abstract: A semiconductor structure capable of real-time spatial sensing of nanoparticles within a nanofluid is provided. The structure includes an array of gate structures. An interlevel dielectric material surrounds the array of gate structures. A vertical inlet channel is located within a portion of the interlevel dielectric material and on one side of the array of gate structures. A vertical outlet channel is located within another portion of the interlevel dielectric material and on another side of the array of gate structures. A horizontal channel that functions as a back gate is in fluid communication with the vertical inlet and outlet channels, and is located beneath the array of gate structures. A back gate dielectric material portion lines exposed surfaces within the vertical inlet channel, the vertical outlet channel and the horizontal channel.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: July 5, 2022
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 11374572
    Abstract: A complementary circuit, including a logic unit which includes pull-up depletion-mode MOS transistors and pull-down depletion-mode MOS transistors and a level shifting circuit coupled to the logic unit.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 28, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi
  • Patent number: 11329035
    Abstract: Attach a smart chip to a carrier, and attach a memory chip to the carrier in communication with the smart chip. The memory chip has a larger footprint than the smart chip, overlies the smart chip, and is attached to the carrier by connections around the periphery of the smart chip. Removably attach an energy storage device (ESD) to the carrier and electrically connect the ESD to the carrier via a flex bridge.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: May 10, 2022
    Assignee: International Business Machines Corporation
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi
  • Patent number: 11233161
    Abstract: A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: January 25, 2022
    Assignee: International Business Machines Corporation
    Inventors: Talia S. Gershon, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 11217717
    Abstract: A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: January 4, 2022
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 11216595
    Abstract: A private key of a public-private key pair with a corresponding identity is written to an integrated circuit including a processor, a non-volatile memory, and a cryptographic engine coupled to the processor and the non-volatile memory. The private key is written to the non-volatile memory. The integrated circuit is implemented in complementary metal-oxide semiconductor 14 nm or smaller technology. The integrated circuit is permanently modified, subsequent to the writing, such that further writing to the non-volatile memory is disabled and such that the private key can be read only by the cryptographic engine and not off-chip. Corresponding integrated circuits and wafers are also disclosed.
    Type: Grant
    Filed: September 21, 2019
    Date of Patent: January 4, 2022
    Assignee: International Business Machines Corporation
    Inventors: Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Jutla, Wanki Kim, Chandrasekara Kothandaraman, Chung Lam, Frank R. Libsch, Seiji Munetoh, Ramachandran Muralidhar, Vijay Narayanan, Dirk Pfeiffer, Devendra K. Sadana, Ghavam G. Shahidi, Robert L. Wisnieff
  • Patent number: 11190362
    Abstract: Devices, computer-implemented methods, and systems that can facilitate radio frequency identification components are provided. According to an embodiment, a device can comprise a memory that can be coupled to an integrated circuit device that can have a processor and an accelerator component that can execute a cryptographic module. The device can further comprise a radio frequency identification device that can be coupled to the integrated circuit device that can communicate with a radio frequency identification reader device based on the cryptographic module.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: November 30, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chitra Subramanian, Seiji Munetoh, Frank Robert Libsch, Daniel Joseph Friedman, Ghavam G. Shahidi, Arun Paidimarri
  • Patent number: 11183115
    Abstract: A method for forming a pixel circuit includes forming transistors on a substrate; forming a passivation layer over the transistors; forming a contact hole to a source of a transistor; forming a transparent conductor that forms a contact in the contact hole and a resistor to control pixel current; and forming an organic light emitting diode (OLED) with an anode connecting to the resistor.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: November 23, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi
  • Patent number: 11158759
    Abstract: A silicon chip carrier includes at least two of a photosensitive P-I-N diode, a non-photosensitive P-I-N diode, a photosensitive P-(metal)-N diode, a non-photosensitive P-(metal)-N diode, and a Schottky diode all integrally formed in the same layers of the chip carrier. In some embodiments, diodes formed in the chip carrier provide photovoltaic power and power regulation to a circuit mounted on the chip carrier.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: October 26, 2021
    Assignee: International Business Machines Corporation
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Cyril Cabral, Jr.
  • Patent number: 11158506
    Abstract: A hard mask and a method of creating thereof are provided. A first layer is deposited that is configured to provide at least one of a chemical and a mechanical adhesion to a layer immediately below it. A second layer is deposited having an etch selectivity that is faster than the first layer. A third layer is deposited having an etch selectivity that is slower than the first and second layers. The third layer has a composite strength that is higher than the first and second layers. A photoresist layer is deposited on top of the third layer and chemically removed above an inner opening. The third layer and part of the second layer are anisotropically etched through the inner opening. The second layer and the first layer are isotropically etched to create overhang regions of the third layer.
    Type: Grant
    Filed: April 18, 2020
    Date of Patent: October 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Ko-Tao Lee, Stephen M. Rossnagel
  • Publication number: 20210327860
    Abstract: Attach a smart chip to a carrier, and attach a memory chip to the carrier in communication with the smart chip. The memory chip has a larger footprint than the smart chip, overlies the smart chip, and is attached to the carrier by connections around the periphery of the smart chip. Removably attach an energy storage device (ESD) to the carrier and electrically connect the ESD to the carrier via a flex bridge.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 21, 2021
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi
  • Publication number: 20210328679
    Abstract: A silicon chip carrier includes at least two of a photosensitive P-I-N diode, a non-photosensitive P-I-N diode, a photosensitive P-(metal)-N diode, a non-photosensitive P-(metal)-N diode, and a Schottky diode all integrally formed in the same layers of the chip carrier. In some embodiments, diodes formed in the chip carrier provide photovoltaic power and power regulation to a circuit mounted on the chip carrier.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 21, 2021
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Cyril Cabral, JR.
  • Patent number: 11139413
    Abstract: A photovoltaic charging system having a narrow-spectrum light source attuned to an absorption band of a photovoltaic cell may achieve power delivery of at least 0.5 mW/10,000 ?m2 upon stimulation of the photovoltaic cell with narrow-spectrum light.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: October 5, 2021
    Assignee: International Business Machines Corporation
    Inventors: Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 11094843
    Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: August 17, 2021
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendr√° K. Sadana, Ghavam G. Shahidi
  • Patent number: 11094842
    Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: August 17, 2021
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 11063161
    Abstract: A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: July 13, 2021
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 11056722
    Abstract: A solid state electrochemical battery fabrication device and a method of creating the solid state electrochemical battery are provided. There is a first chamber comprising a first magnetron and a second chamber comprising a second magnetron, coupled to the first chamber. There is a third chamber comprising a vapor source for a polymer deposition, coupled to the second chamber. A Knudsen cell is coupled to the third chamber and configured to deposit lithium on a battery being fabricated. A linear hollow shaft connects the first, second, and third chambers, and provides a hermetic seal. A first telescopic arm having a housing is coupled to a first end of the hollow shaft and configured to extend out of its housing from the first chamber to the second chamber.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: July 6, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Ko-Tao Lee, Stephen M. Rossnagel