Patents by Inventor Ghavam G. Shahidi

Ghavam G. Shahidi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190244815
    Abstract: A hard mask and a method of creating thereof are provided. A first layer is deposited that is configured to provide at least one of a chemical and a mechanical adhesion to a layer immediately below it. A second layer is deposited having an etch selectivity that is faster than the first layer. A third layer is deposited having an etch selectivity that is slower than the first and second layers. The third layer has a composite strength that is higher than the first and second layers. A photoresist layer is deposited on top of the third layer and chemically removed above an inner opening. The third layer and part of the second layer are anisotropically etched through the inner opening. The second layer and the first layer are isotropically etched to create overhang regions of the third layer.
    Type: Application
    Filed: February 8, 2018
    Publication date: August 8, 2019
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Ko-Tao Lee, Stephen M. Rossnagel
  • Publication number: 20190245247
    Abstract: A solid state electrochemical battery and a method of creation thereof are provided. There is a first conductive electrode on top of a substrate. There is a first polar conductor layer on top of the conductive electrode layer. A first solid electrolyte layer is on top of the first polar conductor layer. There is a second polar conductor layer on top of the first solid electrolyte layer and a second conductive electrode layer on top of the second polar conductor layer. A third polar conductor layer is on top of the second conductive electrode layer and a second solid electrolyte layer is on top of the third polar conductor layer. There is a fourth polar conductor layer on top of the second solid electrolyte layer and a third conductive electrode layer on top of the fourth polar conductor layer.
    Type: Application
    Filed: February 8, 2018
    Publication date: August 8, 2019
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Ko-Tao Lee, Stephen M. Rossnagel
  • Publication number: 20190245246
    Abstract: A solid state electrochemical battery fabrication device and a method of creating the solid state electrochemical battery are provided. There is a first chamber comprising a first magnetron and a second chamber comprising a second magnetron, coupled to the first chamber. There is a third chamber comprising a vapor source for a polymer deposition, coupled to the second chamber. A Knudsen cell is coupled to the third chamber and configured to deposit lithium on a battery being fabricated. A linear hollow shaft connects the first, second, and third chambers, and provides a hermetic seal. A first telescopic arm having a housing is coupled to a first end of the hollow shaft and configured to extend out of its housing from the first chamber to the second chamber.
    Type: Application
    Filed: February 8, 2018
    Publication date: August 8, 2019
    Inventors: Frank Robert Libsch, Ghavam G. Shahidi, Ko-Tao Lee, Stephen M. Rossnagel
  • Patent number: 10355164
    Abstract: A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: July 16, 2019
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 10347599
    Abstract: A method of forming a semiconductor detector including: forming a p-n junction diode in an active device layer of a silicon-on-insulator (SOI) substrate, the active device layer being formed on an insulator layer of the SOI substrate; forming a first opening through the insulator layer to access a backside of a first doped region of the diode, the first doped region underlying a second doped region of the diode; forming a back contact on a back surface of the first doped region and electrically connecting with the first doped region; forming a conductive interconnect layer on an upper surface of the SOI substrate, the interconnect layer including a first top contact providing electrical connection with the second doped region; and forming an electrode in the first opening on the backside of the detector structure, the electrode providing electrical connection with the back contact of the diode.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: July 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi
  • Publication number: 20190207559
    Abstract: Low-power multi-stage amplifiers are provided for capacitive reading of low-amplitude and low-frequency signals. An exemplary multi-stage amplifier comprises a plurality of amplification stages, wherein each of the amplification stages comprises an amplifying transistor and an active load, wherein substantially all of the amplification stages have one or more of an increasing DC bias level and a decreasing DC bias level relative to a prior stage, and wherein an output of a given one of the amplification stages is directly applied as an input to a subsequent one of the amplification stages.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi
  • Publication number: 20190198696
    Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 27, 2019
    Inventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Publication number: 20190181293
    Abstract: A photovoltaic charging system having a narrow-spectrum light source attuned to an absorption band of a photovoltaic cell may achieve power delivery of at least 0.5 mW/10,000 ?m2 upon stimulation of the photovoltaic cell with narrow-spectrum light.
    Type: Application
    Filed: December 13, 2017
    Publication date: June 13, 2019
    Inventors: Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Publication number: 20190172947
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Application
    Filed: December 12, 2018
    Publication date: June 6, 2019
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P.J. Hopstaken
  • Publication number: 20190164779
    Abstract: Embodiments of the present invention provide systems and methods for constructing photo-electrodes. Hydrogenated crystalline silicon is disposed over an absorption layer, wherein the hydrogenated crystalline silicon is attached to self-assembled monolayers (SAMs). Metal electrodes are disposed over the SAMs. Surface passivation is achieved by the hydrogenated crystalline silicon and the SAMs. Resistance to surface corrosion is provided by the SAMs.
    Type: Application
    Filed: November 29, 2017
    Publication date: May 30, 2019
    Inventors: Bahman Hekmatshoartabari, Ali Afzali-Ardakani, Oki Gunawan, Ghavam G. Shahidi
  • Patent number: 10304984
    Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: May 28, 2019
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 10304988
    Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: May 28, 2019
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 10304985
    Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: May 28, 2019
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 10304986
    Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: May 28, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Publication number: 20190157488
    Abstract: Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.
    Type: Application
    Filed: January 6, 2019
    Publication date: May 23, 2019
    Inventors: Bahman Hekmatshoartabari, Devendra K. Sadana, Wilfried E. Haensch, Ghavam G. Shahidi, Davood Shahrjerdi
  • Publication number: 20190148581
    Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 16, 2019
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 10283463
    Abstract: A method of forming a semiconductor detector including: forming a p-n junction diode in an active device layer of a silicon-on-insulator (SOI) substrate, the active device layer being formed on an insulator layer of the SOI substrate; forming a first opening through the insulator layer to access a backside of a first doped region of the diode, the first doped region underlying a second doped region of the diode; forming a back contact on a back surface of the first doped region and electrically connecting with the first doped region; forming a conductive interconnect layer on an upper surface of the SOI substrate, the interconnect layer including a first top contact providing electrical connection with the second doped region; and forming an electrode in the first opening on the backside of the detector structure, the electrode providing electrical connection with the back contact of the diode.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: May 7, 2019
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi
  • Patent number: 10283663
    Abstract: A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: May 7, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 10276739
    Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: April 30, 2019
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Publication number: 20190123230
    Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
    Type: Application
    Filed: December 12, 2018
    Publication date: April 25, 2019
    Inventors: Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi