Abstract: In one aspect, the invention describes a mechanism for refreshing multiple memory words (rows) per refresh cycle, the number of simultaneously refreshed rows being programmable by a small number of inputs. In another aspect, the invention discloses a mechanism for refreshing all banks or a programmable number of banks simultaneously in a multi-bank memory. In yet another aspect, the present invention describes a mechanism for refreshing a programmable multiple memory rows and a programmable multiple banks simultaneously.

Abstract: The present invention relates to a synchronous self timed memory device. The device includes a plurality of memory cells forming a cell array, at least one local decoder interfacing with the cell array, at least one local sense amplifier and at least one local controller. The local sense amplifier interfaces with at least the decoder and cell array, and is adapted to precharge and equalize at least one line coupled thereto. The local controller interfaces with and coordinates the activities of at least the local decoder and sense amplifier.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The system includes a hierarchical memory structure, including a predecoder adapted to perform a first layer of address predecoding and at least one local predecoder interacting with the global predecoder and adapted to perform a second layer of address predecoding.

Abstract: The present invention relates to a system and method adapted to increase memory cell and memory architecture design yield. The present invention includes memory architecture having a decoder and a multi-bank memory. The decoder is adapted to decode addresses. The multi-bank memory interacts with the decoder, wherein the multi-bank memory includes at least one output data bit adapted to complete a word for a failing bank in the multi-bank memory.

Abstract: The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i.e., replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one active predecoder adapted to be shifted out of use; and at least one redundant predecoder adapted to be shifted in to use.

Abstract: The present invention relates to a system and method for applying a stress to a hierarchical memory structure in parallel, testing the memory structure for weak defects. The present invention includes writing a logic 0 into all the memory cells in a memory structure. All the high address predecoded lines and alternating predecoded lines for the lowest address are enabled. A voltage drop between neighboring wordlines and bitlines is affected. A logic l is written into all the memory cells in the memory structure. An opposite voltage polarity is caused on the bitlines due to the logic 1 in the memory cells. A reverse voltage polarity stress is achieved on the wordlines by flipping the state of the lowest predecoded line (i.e., by changing the input address corresponding to that line.

Abstract: The present invention relates to a system and method for increasing the manufacturing yield of a plurality of memory cells used in cell arrays. A programmable fuse, having both hardware and software elements, is used with the plurality of memory cells to indicate that at least one memory cell is unusable and should be shifted out of operation. The software programmable element includes a programmable register adapted to shift in an appropriate value indicating that at least one of the memory cells is flawed. The hardware element includes a fuse gated with the programmable register. Shifting is indicated either by software programmable fuse or hard fuse. Soft fuse registers may be chained together forming a shift register.

Abstract: The present invention relates to a system and method for equalizing the capacitance between at least two lines of a bus running in parallel for a portion of their length. The system and method include determining a twisting pattern for the lines using an algorithm. After determining the twisting pattern, the lines are twisted according to the pattern so that each of the lines runs along every other line for a same distance across the length of the bus.

Abstract: In one aspect, the invention describes a mechanism for refreshing multiple memory words (rows) per refresh cycle, the number of simultaneously refreshed rows being programmable by a small number of inputs. In another aspect, the invention discloses a mechanism for refreshing all banks or a programmable number of banks simultaneously in a multi-bank memory. In yet another aspect, the present invention describes a mechanism for refreshing a programmable multiple memory rows and a programmable multiple banks simultaneously.