Abstract: A delay device is added to the addressing and refreshing circuitry of a DRAM array comprised of DRAM devices less volatile than conventional DRAM devices and, thus, need not be refreshed as often. The delay device is connected to intercept refresh signals generated by a conventional DRAM refresh controller and initiates a refresh cycle after disregarding a predetermined number of refresh signals generated by the refresh controller whose total duration equals the interval by which the less volatile DRAM devices must be refreshed. The delay device also is adapted to power off circuitry needed to address the DRAM devices when the DRAM devices are not being refreshed or otherwise accessed. Additional circuitry is added to selectively power on only specific addressing devices actually needed to address those certain portions of the array being refreshed at that time.

Abstract: A delay device is added to the addressing and refreshing circuitry of a DRAM array comprised of DRAM devices less volatile than conventional DRAM devices and, thus, need not be refreshed as often. The delay device is connected to intercept refresh signals generated by a conventional DRAM refresh controller and initiates a refresh cycle after disregarding a predetermined number of refresh signals generated by the refresh controller whose total duration equals the interval by which the less volatile DRAM devices must be refreshed. The delay device also is adapted to power off circuitry needed to address the DRAM devices when the DRAM devices are not being refreshed or otherwise accessed. Additional circuitry is added to selectively power on only specific addressing devices actually needed to address those certain portions of the array being refreshed at that time.

Abstract: In one aspect, a cathode emitter device comprises an infrared receptor having an n-type doped semiconductive region overlying a p-type doped semiconductive region. The n-type and p-type doped regions of the receptor join at a junction diode. The cathode emitter device further comprises an array of cathode emitter tips in electrical connection with the n-type region of the infrared receptor. In other aspects, the invention encompasses field emission display devices, such as, for example, devices comprising the above-described cathode emitter device. In yet other aspects, the invention encompasses methods of utilizing cathode emitter devices, such as, for example, methods of utilizing the above-described cathode emitter device.

Abstract: A display is arranged in rows and columns with a current source for each column instead of a current source in each display cell. By omitting the current source from the cell, smaller display cell geometries are achieved. In a display where one row is selected at a time, the display of the present invention with smaller circuitry achieves performance identical to the prior art. Application is made to flat panel displays generally including field emission displays, liquid crystal displays, and integrated light emitting diode array displays.

Abstract: A matrix display maintains synchronization with an input NTSC composite video signal by combining the functions of a phase locked loop, a column selector, and a row selector. The matrix includes display cells arranged in rows and columns, each display cell enabled for display on receipt of a column pointer signal and a row pointer signal. The column selector includes a shift circuit that shifts a walking-one pattern to assert in turn one column pointer signal at a time for each column in the matrix. An overflow signal from the shift circuit is used for three functions: (1) to reinstate the walking pattern in the column selector, (2) to lock the phase locked loop on the horizontal synchronization pulse of the NTSC signal, (3) to clock the row selector. The row selector includes a shift circuit and walking-one pattern to assert in turn one row pointer signal for each row of the matrix.

Abstract: A serial to parallel conversion circuit uses a dynamic shift register in a phase locked loop for an index to access a parallel holding register. The composite input signal includes serial data to be sampled and a synchronizing signal at an integer factor of the sampling serial data rate. The phase locked loop generates a control signal for sampling the serial data at a multiple of the synchronizing frequency by incorporating a delay between a variable frequency oscillator output and a phase comparator input. The delay element in one embodiment includes a shift register with a walking-one pattern that overflows to the phase comparator. The walking-one pattern is used to identify which position of the holding register should store the next sample of the input signal. The shift register is self-initialized by a logic combination of all shift register outputs. Power dissipation by the serial to parallel conversion circuit is minimal because only one 7-transistor shift register cell draws current at a time.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. Using the circuit of the invention data is transferred in response to an internal write signal. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: A matrix display maintains synchronization with an input NTSC composite video signal by combining the functions of a phase locked loop, a column selector, and a row selector. The matrix includes display cells arranged in rows and columns, each display cell enabled for display on receipt of a column pointer signal and a row pointer signal. The column selector includes a shift circuit that shifts a walking-one pattern to assert in turn one column pointer signal at a time for each column in the matrix. An overflow signal from the shift circuit is used for three functions: (1) to reinstate the walking pattern in the column selector, (2) to lock the phase locked loop on the horizontal synchronization pulse of the NTSC signal, (3) to clock the row selector. The row selector includes a shift circuit and walking-one pattern to assert in turn one row pointer signal for each row of the matrix.

Abstract: A display is arranged in rows and columns with a current source for each column instead of a current source in each display cell. By omitting the current source from the cell, smaller display cell geometries are achieved. In a display where one row is selected at a time, the display of the present invention with smaller circuitry achieves performance identical to the prior art. Application is made to flat panel displays generally including field emission displays, liquid crystal displays, and integrated light emitting diode array displays.

Abstract: A serial to parallel conversion circuit uses a dynamic shift register in a phase locked loop for an index to access a parallel holding register. The composite input signal includes serial data to be sampled and a synchronizing signal at an integer factor of the sampling serial data rate. The phase locked loop generates a control signal for sampling the serial data at a multiple of the synchronizing frequency by incorporating a delay between a variable frequency oscillator output and a phase comparator input. The delay element in one embodiment includes a shift register with a walking-one pattern that overflows to the phase comparator. The walking-one pattern is used to identify which position of the holding register should store the next sample of the input signal. The shift register is self-initialized by a logic combination of all shift register outputs. Power dissipation by the serial to parallel conversion circuit is minimal because only one 7-transistor shift register cell draws current at a time.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremental increase in CMOS drain current. The invention is an enhancement circuit for ensuring the deactuation of the pull-down portion of the push-pull arrangement during the action of the CMOS transistor arrangement.

Abstract: An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremental increase in CMOS drain current.

Abstract: An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremental increase in CMOS drain current.