Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

Abstract: A memory element includes a first piezotronic transistor coupled to a second piezotronic transistor; the first and second piezotronic transistors each comprising a piezoelectric (PE) material and a piezoresistive (PR) material, wherein an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.

Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.

Abstract: A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element.

Abstract: A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.

Abstract: A method of reducing the diameter of pores formed in a graphene sheet includes forming at least one pore having a first diameter in the graphene sheet such that the at least one pore is surrounded by passivated edges of the graphene sheet. The method further includes chemically reacting the passivated edges with a chemical compound. The method further includes forming a molecular brush at the passivated edges in response to the chemical reaction to define a second diameter that is less than the initial diameter of the at least one pore.

Abstract: A method of reducing the diameter of pores formed in a graphene sheet includes forming at least one pore having a first diameter in the graphene sheet such that the at least one pore is surrounded by passivated edges of the graphene sheet. The method further includes chemically reacting the passivated edges with a chemical compound. The method further includes forming a molecular brush at the passivated edges in response to the chemical reaction to define a second diameter that is less than the initial diameter of the at least one pore.

Abstract: A graphene nanomesh includes a graphene sheet having a plurality of pores formed therethrough. Each pore has a first diameter defined by an inner edge of the graphene sheet. A plurality of passivation elements are bonded to the inner edge of each pore. The plurality of passivation elements defines a second diameter that is less than the first diameter to decrease an overall diameter of at least one pore among the plurality of pores.

Abstract: A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

Abstract: A technique for nanodevice is provided. A reservoir is filled with an ionic fluid. A membrane separates the reservoir, and the membrane includes electrode layers separated by insulating layers in which the electrode layers have an organic coating. A nanopore is formed through the membrane, and the organic coating on the electrode layers forms transient bonds to a base of a molecule in the nanopore. When a first voltage is applied to the electrode layers a tunneling current is generated by the base in the nanopore, and the tunneling current travels through the transient bonds formed to the base to be measured as a current signature for distinguishing the base.

Abstract: A memory element includes a first piezotronic transistor coupled to a second piezotronic transistor; the first and second piezotronic transistors each comprising a piezoelectric (PE) material and a piezoresistive (PR) material, wherein an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

Abstract: A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

Abstract: A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.

Abstract: Apparatus, system, and method are provided for cutting a linear charged polymer inside a nanopore. A first voltage is applied to create an electric field in a first direction. A second voltage is applied to create an electric field in a second direction, and the first direction is opposite to the second direction. When the electric field in the first direction and the electric field in the second direction are applied to a linear charged polymer inside a nanopore, the linear charged polymer is cut at a location with predetermined accuracy.

Abstract: A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.

Abstract: Apparatus, system, and method are provided for cutting a linear charged polymer inside a nanopore. A first voltage is applied to create an electric field in a first direction. A second voltage is applied to create an electric field in a second direction, and the first direction is opposite to the second direction. When the electric field in the first direction and the electric field in the second direction are applied to a linear charged polymer inside a nanopore, the linear charged polymer is cut at a location with predetermined accuracy.

Abstract: A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

Abstract: A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.