Abstract: An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: Tools having mounting modules with registration systems are disclosed. The mounting module includes positioning elements for precisely locating a processing chamber and a transport system that moves workpieces to and from the processing chamber. The relative positions between positioning elements of the module are fixed so that the transport system does not need to be recalibrated when the processing chamber is removed and replaced with another processing chamber. The processing chamber includes a paddle device for agitating processing liquid at a process surface of the workpiece. The paddle device, the processing chamber, and electrodes within the processing chamber are configured to reduce the likelihood for electrical shadowing created by the paddles at the surface of the workpiece, and to account for three-dimensional effects on the electrical field as the paddles reciprocate relative to the workpiece.

Abstract: Reactors having multiple electrodes and/or enclosed reciprocating paddles are disclosed. The reactor can include multiple electrodes spaced apart from a process location to provide virtual electrodes proximate to the process location for transferring material to or from the workpiece. A magnet may be positioned proximate to the process plane to orient magnetically sensitive material deposited on the workpiece. The electrodes may be removable from the reactor without passing them through the magnet to reduce interference between the electrodes and the magnet. The workpiece may be carried by a rotatable workpiece support to orient the workpiece for processing. At least one of the electrodes can operate as a current thief to reduce terminal effects at the periphery of the workpiece.

Abstract: Paddles and enclosures for processing microfeature workpieces are disclosed. A paddle device having multiple paddles is positioned in an enclosure to reciprocate back and forth along a generally linear path. The clearances between the paddles, the workpiece and the walls of the chamber are relatively small to increase the flow agitation at the surface of the workpiece and enhance the mass transfer process occurring there. The paddles are shaped to reduce or eliminate electrical shadowing effects created at the surface of the workpiece during electrochemical processing. Paddles on the same paddle device may have different shapes to reduce the likelihood for creating three-dimensional effects in the flow field proximate to the surface of the workpiece. The reciprocation stroke of the paddles may shift to further reduce shadowing.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first and/or second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal, and the second electrode may move along with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: Contact assemblies for electrochemical processing of microelectronic workpieces. The contact assembly (400) can comprise a support member (410) that includes an inner wall (412) which defines an opening (414) configured to receive the workpiece and a plurality of contacts (420). The individual contacts (420) include a conductor (440) and a cover (430). The conductor (440) can comprise a proximal section (435) projecting inwardly into the opening (414) relative to the support member (410), a distal section (436) extending from the proximal section (435), and an inert exterior (444) at least at the distal section (436). The cover (430) comprises a dielectric element that covers at least the proximal section of the conductor, but does not cover at least a portion of the distal section of the core. The exposed portion of the distal section of the core, accordingly, defines a conductive contact site for contacting a conductive layer (e.g., a seed layer) on the workpiece.

Abstract: A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (505) providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electroplating process.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.