Abstract: A method for system authentication includes subjecting a system to a challenge. The method further includes receiving a response from the system. The received response is dependent upon a location of a filament in a resistive random-access memory device of the system. Additionally, the response is also a unique identifier.

Abstract: An electronic circuit includes a plurality of word lines; a plurality of bit lines intersecting said plurality of word lines at a plurality of grid points; and a plurality of in-memory processing cells located at said plurality of grid points. Each of said in-memory processing cells includes a first switch having a first terminal coupled to a corresponding one of said word lines and a second terminal; a second switch having a first terminal coupled to said second terminal of said first switch and a second terminal coupled to a corresponding one of said bit lines; and a non-volatile tunable capacitor having one electrode coupled to said second terminal of said first switch and said first terminal of said switch, and having another electrode coupled to ground.

Abstract: An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.

Abstract: Resistive memory devices are provided which are configured to mitigate resistance drift. A device comprises a phase-change element, a resistive liner, a first electrode, a second electrode, and a third electrode. The resistive liner is disposed in contact with a first surface of the phase-change element. The first electrode is coupled to a first end portion of the resistive liner. The second electrode is coupled to a second end portion of the resistive liner. The third electrode is coupled to the first surface of the phase-change element.

Abstract: In an approach to a implementing a PUF based on a PCM array, for each PCM device in an array of PCM devices, the PCM device is reset to an initial state. A first conductance of the PCM device is measured. A predetermined number of partial set pulses is applied to the PCM device. A second conductance of the PCM device is measured. Responsive to determining that the second conductance is greater than the first conductance multiplied by a factor, a PUF value of the PCM device is set to logical “1”. Responsive to determining that the second conductance is less than the first conductance multiplied by a factor, a PUF value of the PCM device is set to logical “0”. The PUF value of the PCM device is added to an overall PUF string for the array of PCM devices.

Abstract: An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.

Abstract: In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.

Abstract: In a method for using or forming a semiconductor structure. The semiconductor structure may include a resistive random access memory (RRAM) gate with a first electrode and a second electrode. The RRAM gate may also include a switching layer that includes a dielectric material having a switching layer k-value and a switching layer thermal conductivity. The RRAM gate may also include a complimentary switching (CS) mitigation layer with a material having a CS k-value that is lower than the switching layer k-value and a CS thermal conductivity that is higher than the switching layer thermal conductivity.

Abstract: Low-cost techniques for sensing ambient temperatures in a container or package using phase change materials are provided. In one aspect, a temperature sensor is provided. The temperature sensor includes: at least one phase change material configured to transition from an amorphous state to a crystalline state upon exposure to temperatures above a predetermined threshold temperature for a given duration. A method of monitoring temperature exposure of a consumer good using the temperature sensor is also provided.

Abstract: A physical unclonable function device includes alternating regions of programable material and electrically conductive regions. The regions of programable material are configured to switch resistance upon receiving an electric pulse. An electric pulse applied between two outer electrically conductive regions of the alternating regions will switch the resistance of at least one region of programmable material. The alternating regions may include a plurality of the electrically conducting regions and a region of the programable material disposed between each of the plurality of electrically conductive regions. The resistance of each of the regions of programable material is selectively variable in at least a portion thereof as a result of the electric pulse flowing therethrough. The resistance value of the programable material region may be a readable value as a state of the device. The regions of programmable material may be formed of a phase change material or an oxide.

Abstract: A tunable metasurface is provided. The tunable metasurface includes a mirror, a dielectric layer disposed on the mirror, a metallic antenna and a phase change material (PCM) layer. The PCM layer is interposed between the dielectric layer and the metallic antenna. The PCM layer is configured to be amorphous or crystalline. The mirror, the dielectric layer, the metallic antenna and the PCM layer cooperatively form a Fabry Perot cavity in which light incident on the metallic antenna from free space is reflected between the mirror and the metallic antenna. The PCM layer has blanket dimensions relative to those of the metallic antenna such that the Fabry Perot cavity is critically coupled with the free space when the PCM layer is only one of amorphous and crystalline.

Abstract: A method for forming a nonvolatile PCM logic device may include providing a PCM film component having a first end contact distally opposed from a second end contact, positing a first proximity adjacent to a first surface of the PCM film component, positing a second proximity heater adjacent to a second surface of the PCM film component, wherein the first proximity heater and the second proximity heater are electrically isolated from the PCM film component. The method may further include applying a combination of pulses to one or more of the first proximity heater and the second proximity heater to change a resistance value of the PCM film component corresponding to a logic truth table. Further, the method may include simultaneously applying a first combination of reset pulses to program, or set pulses to initialize, the PCM film component, to the first proximity heater and the second proximity heater.

Abstract: Embodiments herein disclose computer-implemented methods, computer program products and computer systems for authenticating a user. The computer-implemented method may include receiving biographical data corresponding to a user. A change rate may be determined based on user biographical data. The computer-implemented method may include receiving first biometric data having a time-varying characteristic from the user at a first time and receiving second biometric data having the time-varying characteristic from the user at a second time that is later in time than the first time. Further, the computer-implemented method may include determining third biometric data based at least on the first biometric data, the second time, and the time-varying characteristic, and authenticating the user if the third biometric data is within a predetermined threshold of the second biometric data at the second time.

Abstract: A device for implementing spike-timing-dependent plasticity is provided. The device includes a phase-change element, first and second electrodes disposed respective first and second surfaces of the phase-change element. The phase-change element includes a phase-change material with an inverse resistivity characteristic. The first electrode includes a first heater element, and a first electrical insulating layer which electrically insulates the first resistive heater element from the first electrode and the phase-change element. The second electrode includes a second resistive heater element, and a second electrical insulating layer which electrically insulates the second resistive heater element from the second electrode and the phase-change element.

Abstract: An approach for representing both positive and negative weights in neuromorphic computing is disclosed. The approach leverages a double gate FeFET (ferroelectric field effect transistor) device. The device leverages a double-gate FeFET with four terminals (two separate gates and source and drain) and ferroelectric gate dielectric. The device may have a junction-less channel. A synaptic weight is programmed by biasing one of the two gates. The store weight is sensed via a current flow from source to drain. A pre-defined bias is applied to the other gate during the sensing, such that a reference current is subtracted from the drain current. The net current for sensing is current from the synaptic devices subtracted by the pre-defined reference current.

Abstract: A light detection and ranging (LiDAR) system is provided. The LiDAR system includes an emitter for emitting a light beam, a configurable light processing control unit to affect the light beam, a receiver for receiving the light beam and a computer system. The computer system controls operations of the light processing control unit, computes a distance to a target using a time of flight of the light beam from the emitter to the target and from the target to the receiver and simultaneously corroborates the computed distance by controlling the operations of the light processing control unit to focus and defocus the light beam.

Abstract: In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.

Abstract: A memory array with memory cells may have one or more heaters integrated into the memory array between the memory cells. A processor in communication with the heater may notify the heater to activate when a trigger event occurs.

Abstract: A memory array with memory cells may have one or more heaters integrated into the memory array between the memory cells. A processor in communication with the heater may notify the heater to activate when a trigger event occurs.

Abstract: A device comprises a non-volatile memory and a control system. The non-volatile memory includes an array of non-volatile memory cells, wherein at least one non-volatile memory cell includes a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes first and second source/drain regions, and a gate structure which comprises a ferroelectric layer, and a gate electrode disposed over the ferroelectric layer. The ferroelectric layer comprises a first region adjacent to the first source/drain region and a second region adjacent to the second source/drain region. The control system is operatively coupled to the non-volatile memory to program the FeFET device to have a logic state among a plurality of different logic states. At least one logic state among the plurality of different logic states corresponds to a polarization state of the FeFET device in which the first and second regions of the ferroelectric layer have respective remnant polarizations with opposite polarities.