Abstract: A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.

Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.

Abstract: An electronic circuit includes a plurality of word lines; a plurality of bit lines intersecting said plurality of word lines at a plurality of grid points; and a plurality of in-memory processing cells located at said plurality of grid points. Each of said in-memory processing cells includes a first switch having a first terminal coupled to a corresponding one of said word lines and a second terminal; a second switch having a first terminal coupled to said second terminal of said first switch and a second terminal coupled to a corresponding one of said bit lines; and a non-volatile tunable capacitor having one electrode coupled to said second terminal of said first switch and said first terminal of said switch, and having another electrode coupled to ground.

Abstract: A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.

Abstract: A tunable nonvolatile resistive element, wherein the device conductance is modulated by changing the length of a contact between a phase change material and a resistive liner. By choosing the contact length to be less than the transfer length a linear modulation of the conductance is obtained.

Abstract: A device comprises a non-volatile memory and a control system. The non-volatile memory includes an array of non-volatile memory cells, wherein at least one non-volatile memory cell includes a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes first and second source/drain regions, and a gate structure which comprises a ferroelectric layer, and a gate electrode disposed over the ferroelectric layer. The ferroelectric layer comprises a first region adjacent to the first source/drain region and a second region adjacent to the second source/drain region. The control system is operatively coupled to the non-volatile memory to program the FeFET device to have a logic state among a plurality of different logic states. At least one logic state among the plurality of different logic states corresponds to a polarization state of the FeFET device in which the first and second regions of the ferroelectric layer have respective remnant polarizations with opposite polarities.

Abstract: In a method for using or forming a semiconductor structure. The semiconductor structure may include a resistive random access memory (RRAM) gate with a first electrode and a second electrode. The RRAM gate may also include a switching layer that includes a dielectric material having a switching layer k-value and a switching layer thermal conductivity. The RRAM gate may also include a complimentary switching (CS) mitigation layer with a material having a CS k-value that is lower than the switching layer k-value and a CS thermal conductivity that is higher than the switching layer thermal conductivity.

Abstract: A security key associated with a plurality of programmable switches included in an integrated circuit is received. The plurality of programmable switches are set causing the plurality of programmable switches to be conductive. Reset pulses are applied to a first set of programmable switches included in the plurality of programmable switches based on the received security key.

Abstract: An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.

Abstract: A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.

Abstract: A method for manufacturing a phase-change memory device includes providing a substrate including a plurality of bottom electrodes, patterning the substrate to form a plurality of pores in the substrate extending from a surface of the substrate to the bottom electrodes, depositing a phase-change material over the substrate, implanting one or more of a Ge, Sb and Te in the phase-change material to amorphize at least a portion of the phase-change material inside the pore, planarizing the device to exposed the surface of the substrate, and forming a plurality of top electrodes over the pores, in contact with the phase-change material.

Abstract: A phase change memory (PCM) device including a bottom electrode, a bottom heater over the bottom electrode, a bottom buffer layer over the bottom heater, a PCM region over the bottom buffer layer, a top buffer layer over the PCM region, a top heater over the top buffer layer, and a top electrode over the top heater.

Abstract: A ferroelectric field effect transistor (FeFET) is provided. The FeFET includes a buried oxide (BOX) layer; a nanowire layer including pads formed on the BOX layer at source and drain regions of the FeFET, and a nanowire core extending between the pads and over a recess formed in the BOX layer; a metal electrode coating the nanowire core; a ferroelectric layer coating the metal electrode; an interfacial layer coating the ferroelectric layer; and a polysilicon layer formed over a channel region of the FeFET, the polysilicon layer coating the interfacial layer.

Abstract: Embodiments herein disclose computer-implemented methods, computer program products and computer systems for authenticating a user. The computer-implemented method may include receiving biographical data corresponding to a user. A change rate may be determined based on user biographical data. The computer-implemented method may include receiving first biometric data having a time-varying characteristic from the user at a first time and receiving second biometric data having the time-varying characteristic from the user at a second time that is later in time than the first time. Further, the computer-implemented method may include determining third biometric data based at least on the first biometric data, the second time, and the time-varying characteristic, and authenticating the user if the third biometric data is within a predetermined threshold of the second biometric data at the second time.

Abstract: A medication dispenser system and use thereof for providing exact personal dosing for a patient are provided. In one aspect, a method for dispensing medications is provided. The method includes the steps of: obtaining patient information and a list of the medications for the patient; calculating a personal dose of each of the medications for the patient using the patient and cross-medication interaction information; and preparing treatments each containing the personal dose of each of the medications in a single treatment. In another aspect a system for dispensing medications includes: a patient information component for obtaining patient information and a list of the medications for the patient; a dosage calculator component for calculating a personal dose of each of the medications for the patient using the patient information; and a medication dispenser component for preparing treatments each containing the personal dose of each of the medications in a single treatment.

Abstract: Resistive elements for PCM RPUs and techniques for fabrication thereof using trench depth pattering are provided. In one aspect, an RPU device includes: a first electrode; a second electrode; a heater; and a PCM disposed over the first electrode, the second electrode and the heater, wherein the heater includes a combination of a first material having a resistivity r1 and a second material having a resistivity r2, wherein r1>r2, and wherein only the first material is present beneath the PCM and forms a resistive heating element. A method of operating an RPU device is also provided.

Abstract: Resistive elements for PCM RPUs and techniques for fabrication thereof using trench depth pattering are provided. In one aspect, an RPU device includes: a first electrode; a second electrode; a heater; and a PCM disposed over the first electrode, the second electrode and the heater, wherein the heater includes a combination of a first material having a resistivity r1 and a second material having a resistivity r2, wherein r1>r2, and wherein only the first material is present beneath the PCM and forms a resistive heating element. A method of operating an RPU device is also provided.

Abstract: An approach is provided in which an information handling system loads a set of encrypted binary code into a processor that has been encrypted based upon a unique key of the processor. The processor includes an instruction decoder that transforms the set of encrypted binary code into a set of instruction control signals using the unique key. In turn, the processor executes a set of instructions based on the set of instruction control signals.

Abstract: Methods and structures for fabricating a semiconductor device that includes a reduced programming current phase change memory (PCM) are provided. The method includes forming a bottom electrode. The method further includes forming a PCM and forming a conductive bridge filament in a dielectric to serve as a heater for the PCM. The method also includes forming a top electrode.

Abstract: A medication dispenser system and use thereof for providing exact personal dosing for a patient are provided. In one aspect, a method for dispensing medications is provided. The method includes the steps of: obtaining patient information and a list of the medications for the patient; calculating a personal dose of each of the medications for the patient using the patient and cross-medication interaction information; and preparing treatments each containing the personal dose of each of the medications in a single treatment. In another aspect a system for dispensing medications includes: a patient information component for obtaining patient information and a list of the medications for the patient; a dosage calculator component for calculating a personal dose of each of the medications for the patient using the patient information; and a medication dispenser component for preparing treatments each containing the personal dose of each of the medications in a single treatment.